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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK7A65D(STA4,Q,M)

TK7A65D(STA4,Q,M)

MOSFET N-CH 650V 7A TO220SIS

Toshiba Semiconductor and Storage

3060 1.97
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TK7A65D(STA4,Q,M)

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Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Ta) 10V 980mOhm @ 3.5A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
STW8NK80Z

STW8NK80Z

MOSFET N-CH 800V 6.2A TO247-3

STMicroelectronics

2039 0.00
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STW8NK80Z

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Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 800 V 6.2A (Tc) 10V 1.5Ohm @ 3.1A, 10V 4.5V @ 100µA 46 nC @ 10 V ±30V 1320 pF @ 25 V - 140W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF190N65FL1-F154

FCPF190N65FL1-F154

MOSFET N-CH 650V 20.6A TO220F-3

onsemi

3016 1.97
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Tube FRFET®, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 20.6A (Tc) - 190mOhm @ 10A, 10V 5V @ 2mA 78 nC @ 10 V ±20V 3055 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
PSMN2R2-40PS,127

PSMN2R2-40PS,127

MOSFET N-CH 40V 100A TO220AB

Nexperia USA Inc.

2962 1.97
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PSMN2R2-40PS,127

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Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.1mOhm @ 25A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 8423 pF @ 20 V - 306W (Tc) -55°C ~ 175°C (TJ) Through Hole
STB141NF55

STB141NF55

MOSFET N-CH 55V 80A D2PAK

STMicroelectronics

3764 1.97
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STB141NF55

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Tape & Reel (TR) STripFET™ II Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8mOhm @ 40A, 10V 4V @ 250µA 142 nC @ 10 V ±20V 5300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR4615TRL

AUIRFR4615TRL

MOSFET N-CH 150V 33A DPAK

Infineon Technologies

3932 1.97
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AUIRFR4615TRL

Datenblatt

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 26 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK9A65W,S5X

TK9A65W,S5X

MOSFET N-CH 650V 9.3A TO220SIS

Toshiba Semiconductor and Storage

2368 1.97
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TK9A65W,S5X

Datenblatt

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 9.3A (Ta) 10V 500mOhm @ 4.6A, 10V 3.5V @ 350µA 20 nC @ 10 V ±30V 700 pF @ 300 V - 30W (Tc) 150°C (TJ) Through Hole
IPA60R360CFD7XKSA1

IPA60R360CFD7XKSA1

MOSFET N-CH 650V 5A TO220

Infineon Technologies

2043 1.91
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IPA60R360CFD7XKSA1

Datenblatt

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 5A (Tc) 10V 360mOhm @ 2.9A, 10V 4.5V @ 140µA 14 nC @ 10 V ±20V 679 pF @ 400 V - 23W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF2804LPBF

IRF2804LPBF

MOSFET N-CH 40V 75A TO262

Infineon Technologies

3110 1.00
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IRF2804LPBF

Datenblatt

Bulk,Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) - 2.3mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V - 6450 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
CSD16321Q5C

CSD16321Q5C

MOSFET N-CH 25V 31A/100A 8VSON

Texas Instruments

2727 1.98
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CSD16321Q5C

Datenblatt

Tape & Reel (TR),Cut Tape (CT) NexFET™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 31A (Ta), 100A (Tc) 3V, 8V 2.4mOhm @ 25A, 8V 1.4V @ 250µA 19 nC @ 4.5 V +10V, -8V 3100 pF @ 12.5 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4408DY-T1-GE3

SI4408DY-T1-GE3

MOSFET N-CH 20V 14A 8SO

Vishay Siliconix

3422 1.98
- +

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SI4408DY-T1-GE3

Datenblatt

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 14A (Ta) 4.5V, 10V 4.5mOhm @ 21A, 10V 1V @ 250µA (Min) 32 nC @ 4.5 V ±20V - - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4862DY-T1-E3

SI4862DY-T1-E3

MOSFET N-CH 16V 17A 8SO

Vishay Siliconix

3778 1.98
- +

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SI4862DY-T1-E3

Datenblatt

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 16 V 17A (Ta) 2.5V, 4.5V 3.3mOhm @ 25A, 4.5V 600mV @ 250µA (Min) 70 nC @ 4.5 V ±8V - - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSC016N06NSSCATMA1

BSC016N06NSSCATMA1

TRENCH 40<-<100V PG-WSON-8

Infineon Technologies

2626 1.92
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BSC016N06NSSCATMA1

Datenblatt

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 234A (Tc) 6V, 10V 1.6mOhm @ 50A, 10V 3.3V @ 95µA 95 nC @ 10 V ±20V 6500 pF @ 30 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA600N25NM3SXKSA1

IPA600N25NM3SXKSA1

MOSFET N-CH 250V 15A TO220

Infineon Technologies

3796 1.00
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IPA600N25NM3SXKSA1

Datenblatt

Bulk,Tube OptiMOS™3 Active N-Channel MOSFET (Metal Oxide) 250 V 15A (Tc) 10V 60mOhm @ 15A, 10V 4V @ 89µA 29 nC @ 10 V ±20V 2300 pF @ 100 V - 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA1R6N100D2-TRL

IXTA1R6N100D2-TRL

MOSFET N-CH 1000V 1.6A TO263

IXYS

3102 1.98
- +

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Tape & Reel (TR) Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 1.6A (Tj) 0V 10Ohm @ 800mA, 0V 4.5V @ 100µA 27 nC @ 5 V ±20V 645 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK12A45D(STA4,Q,M)

TK12A45D(STA4,Q,M)

MOSFET N-CH 450V 12A TO220SIS

Toshiba Semiconductor and Storage

2124 1.98
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TK12A45D(STA4,Q,M)

Datenblatt

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 450 V 12A (Ta) 10V 520mOhm @ 6A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
IRF5210STRRPBF

IRF5210STRRPBF

MOSFET P-CH 100V 38A D2PAK

Infineon Technologies

3312 1.99
- +

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IRF5210STRRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 100 V 38A (Tc) 10V 60mOhm @ 38A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 2780 pF @ 25 V - 3.1W (Ta), 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTMFS4C020NT3G

NTMFS4C020NT3G

MOSFET N-CH 30V 47A/303A 5DFN

onsemi

2187 1.99
- +

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NTMFS4C020NT3G

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 47A (Ta), 303A (Tc) 4.5V, 10V 0.7mOhm @ 30A, 10V 2.2V @ 250µA 139 nC @ 10 V ±20V 10144 pF @ 15 V - 3.2W (Ta), 134W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQM200N04-1M8_GE3

SQM200N04-1M8_GE3

MOSFET N-CH 40V 200A TO263-7

Vishay Siliconix

2999 1.99
- +

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SQM200N04-1M8_GE3

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 10V 1.8mOhm @ 30A, 10V 3.5V @ 250µA 310 nC @ 10 V ±20V 17350 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STF11N65M2

STF11N65M2

MOSFET N-CH 650V 7A TO220FP

STMicroelectronics

2675 1.99
- +

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STF11N65M2

Datenblatt

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 670mOhm @ 3.5A, 10V 4V @ 250µA 12.5 nC @ 10 V ±25V 410 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
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