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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK10A55D(STA4,Q,M)

TK10A55D(STA4,Q,M)

MOSFET N-CH 550V 10A TO220SIS

Toshiba Semiconductor and Storage

3302 2.04
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TK10A55D(STA4,Q,M)

Datenblatt

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 10A (Ta) 10V 720mOhm @ 5A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
STL22N60DM6

STL22N60DM6

MOSFET N-CH 650V 15A PWRFLAT HV

STMicroelectronics

3643 2.04
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STL22N60DM6

Datenblatt

Tape & Reel (TR) MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 650 V 15A - - - - - - - - - Surface Mount
STFU25N60M2-EP

STFU25N60M2-EP

MOSFET N-CH 600V 18A TO220FP

STMicroelectronics

2307 2.04
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STFU25N60M2-EP

Datenblatt

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 188mOhm @ 9A, 10V 4.75V @ 250µA 29 nC @ 10 V ±25V 1090 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP22N60DM6

STP22N60DM6

MOSFET N-CH 600V 15A TO220

STMicroelectronics

2609 2.04
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STP22N60DM6

Datenblatt

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 240mOhm @ 7.5A, 10V 4.75V @ 250µA 20.6 nC @ 10 V ±25V 800 pF @ 100 V - 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9640LPBF

IRF9640LPBF

MOSFET P-CH 200V 11A I2PAK

Vishay Siliconix

2123 2.04
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IRF9640LPBF

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 3W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIE810DF-T1-E3

SIE810DF-T1-E3

MOSFET N-CH 20V 60A 10POLARPAK

Vishay Siliconix

2786 2.05
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SIE810DF-T1-E3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 2.5V, 10V 1.4mOhm @ 25A, 10V 2V @ 250µA 300 nC @ 10 V ±12V 13000 pF @ 10 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIE812DF-T1-E3

SIE812DF-T1-E3

MOSFET N-CH 40V 60A 10POLARPAK

Vishay Siliconix

3563 2.05
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SIE812DF-T1-E3

Datenblatt

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 2.6mOhm @ 25A, 10V 3V @ 250µA 170 nC @ 10 V ±20V 8300 pF @ 20 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK72E12N1,S1X

TK72E12N1,S1X

MOSFET N CH 120V 72A TO-220

Toshiba Semiconductor and Storage

3458 2.05
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TK72E12N1,S1X

Datenblatt

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 120 V 72A (Ta) 10V 4.4mOhm @ 36A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 8100 pF @ 60 V - 255W (Tc) 150°C (TJ) Through Hole
IPA60R280C6XKSA1

IPA60R280C6XKSA1

MOSFET N-CH 600V 13.8A TO220-FP

Infineon Technologies

2600 2.05
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IPA60R280C6XKSA1

Datenblatt

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 13.8A (Tc) 10V 280mOhm @ 6.5A, 10V 3.5V @ 430µA 43 nC @ 10 V ±20V 950 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R280E6XKSA1

IPA60R280E6XKSA1

MOSFET N-CH 600V 13.8A TO220-FP

Infineon Technologies

2627 1.00
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IPA60R280E6XKSA1

Datenblatt

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 13.8A (Tc) 10V 280mOhm @ 6.5A, 10V 3.5V @ 430µA 43 nC @ 10 V ±20V 950 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQM120N10-09_GE3

SQM120N10-09_GE3

MOSFET N-CH 100V 120A TO263

Vishay Siliconix

3333 2.05
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SQM120N10-09_GE3

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 9.5mOhm @ 30A, 10V 3.5V @ 250µA 180 nC @ 10 V ±20V 8645 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOB190A60L

AOB190A60L

MOSFET N-CH 600V 20A TO263

Alpha & Omega Semiconductor Inc.

2785 2.05
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AOB190A60L

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 7.6A, 10V 4.6V @ 250µA 34 nC @ 10 V ±20V 1935 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP65R310CFDAAKSA1

IPP65R310CFDAAKSA1

MOSFET N-CH 650V 11.4A TO220-3

Infineon Technologies

3925 2.05
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IPP65R310CFDAAKSA1

Datenblatt

Tube Automotive, AEC-Q101, CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 440µA 41 nC @ 10 V ±20V 1110 pF @ 100 V - 104.2W (Tc) -40°C ~ 150°C (TJ) Through Hole
R5009ANJTL

R5009ANJTL

MOSFET N-CH 500V 9A LPTS

Rohm Semiconductor

3270 2.05
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R5009ANJTL

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 9A (Ta) 10V 720mOhm @ 4.5A, 10V 4.5V @ 1mA 21 nC @ 10 V ±30V 650 pF @ 25 V - 50W (Tc) 150°C (TJ) Surface Mount
2SK2701A

2SK2701A

MOSFET N-CH 450V 7A TO220F

Sanken

2576 2.06
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2SK2701A

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 7A (Ta) 10V 1.1Ohm @ 3.5A, 10V 4V @ 1µA - ±30V 720 pF @ 10 V - 35W (Tc) - Through Hole
FKP253

FKP253

MOSFET N-CH 250V 20A TO220

Sanken

3070 2.06
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FKP253

Datenblatt

Bulk - Not For New Designs N-Channel MOSFET (Metal Oxide) 250 V 20A (Ta) 10V 95mOhm @ 10A, 10V 4.5V @ 1mA - ±30V 1600 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
GKI07113

GKI07113

MOSFET N-CH 75V 9A 8DFN

Sanken

2043 2.06
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GKI07113

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 75 V 9A (Ta) 4.5V, 10V 9.1mOhm @ 27.2A, 10V 2.5V @ 1mA 57 nC @ 10 V ±20V 4040 pF @ 25 V - 3.1W (Ta), 77W (Tc) 150°C (TJ) Surface Mount
GKI04031

GKI04031

MOSFET N-CH 40V 17A 8DFN

Sanken

3350 2.06
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GKI04031

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 17A (Ta) 4.5V, 10V 3.5mOhm @ 51A, 10V 2.5V @ 1mA 63.2 nC @ 10 V ±20V 3910 pF @ 25 V - 3.1W (Ta), 77W (Tc) 150°C (TJ) Surface Mount
SQP60N06-15_GE3

SQP60N06-15_GE3

MOSFET N-CH 60V 56A TO220AB

Vishay Siliconix

3800 2.06
- +

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Немедленный

SQP60N06-15_GE3

Datenblatt

Tube Automotive, AEC-Q101, TrenchFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 10V 15mOhm @ 30A, 10V 3.5V @ 250µA 50 nC @ 10 V ±20V 2480 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
STD2NK90Z-1

STD2NK90Z-1

MOSFET N-CH 900V 2.1A IPAK

STMicroelectronics

3622 2.06
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STD2NK90Z-1

Datenblatt

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 900 V 2.1A (Tc) 10V 6.5Ohm @ 1.05A, 10V 4.5V @ 50µA 27 nC @ 10 V ±30V 485 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
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