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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPF039N08NF2SATMA1

IPF039N08NF2SATMA1

TRENCH 40<-<100V PG-TO263-7

Infineon Technologies

3493 2.07
- +

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Немедленный

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
BUK9J0R9-40HX

BUK9J0R9-40HX

BUK9J0R9-40H/SOT1023/4 LEADS

Nexperia USA Inc.

2838 2.13
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BUK9J0R9-40HX

Datenblatt

Tape & Reel (TR) - Active - - - 220A (Tc) - - - - - - - - - -
SIHB15N65E-GE3

SIHB15N65E-GE3

MOSFET N-CH 650V 15A TO263

Vishay Siliconix

3709 2.13
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SIHB15N65E-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1640 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SK3004

2SK3004

MOSFET N-CH 250V 18A TO220F

Sanken

2032 2.13
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2SK3004

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 18A (Ta) 10V 250mOhm @ 9A, 10V 4V @ 1mA - ±20V 850 pF @ 10 V - 35W (Tc) 150°C (TJ) Through Hole
AOTF25S65

AOTF25S65

MOSFET N-CH 650V 25A TO220-3F

Alpha & Omega Semiconductor Inc.

3035 2.13
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AOTF25S65

Datenblatt

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 25A (Tc) 10V 190mOhm @ 12.5A, 10V 4V @ 250µA 26.4 nC @ 10 V ±30V 1278 pF @ 100 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB180N03S4L01ATMA1

IPB180N03S4L01ATMA1

MOSFET N-CH 30V 180A TO263-7

Infineon Technologies

3079 2.13
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IPB180N03S4L01ATMA1

Datenblatt

Tape & Reel (TR),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 180A (Tc) 4.5V, 10V 1.05mOhm @ 100A, 10V 2.2V @ 140µA 239 nC @ 10 V ±16V 17600 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP1N80P

IXTP1N80P

MOSFET N-CH 800V 1A TO220AB

IXYS

2290 2.14
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IXTP1N80P

Datenblatt

Tube Polar Active N-Channel MOSFET (Metal Oxide) 800 V 1A (Tc) 10V 14Ohm @ 500mA, 10V 4V @ 50µA 9 nC @ 10 V ±20V 250 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIBF30GPBF

IRFIBF30GPBF

MOSFET N-CH 900V 1.9A TO220-3

Vishay Siliconix

2214 2.15
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IRFIBF30GPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 1.9A (Tc) 10V 3.7Ohm @ 1.1A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA22N60AE-E3

SIHA22N60AE-E3

MOSFET N-CHANNEL 600V 20A TO220

Vishay Siliconix

2199 2.15
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SIHA22N60AE-E3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1451 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB80N04S303ATMA1

IPB80N04S303ATMA1

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies

2352 2.15
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IPB80N04S303ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.2mOhm @ 80A, 10V 4V @ 120µA 110 nC @ 10 V ±20V 7300 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS86150A

FDMS86150A

FET 100V 4.85 MOHM PQFN56

onsemi

3162 2.15
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FDMS86150A

Datenblatt

Tape & Reel (TR) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 16A (Ta), 60A (Tc) 6V, 10V 4.85mOhm @ 16A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 4665 pF @ 50 V - 2.7W (Ta), 113W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVMFWS0D5N04XMT1G

NVMFWS0D5N04XMT1G

40V T10M IN S08FL GEN 2 PACKAGE

onsemi

2754 2.15
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NVMFWS0D5N04XMT1G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 423A (Tc) 10V 0.52mOhm @ 50A, 10V 3.5V @ 240µA 100 nC @ 10 V ±20V 6250 pF @ 25 V - 163W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TSM70N900CH C5G

TSM70N900CH C5G

MOSFET N-CH 700V 4.5A TO251

Taiwan Semiconductor Corporation

2286 2.15
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TSM70N900CH C5G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 4.5A (Tc) 10V 900mOhm @ 1.5A, 10V 4V @ 250µA 9.7 nC @ 10 V ±30V 482 pF @ 100 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG14N50D-E3

SIHG14N50D-E3

MOSFET N-CH 500V 14A TO247AC

Vishay Siliconix

3166 2.15
- +

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SIHG14N50D-E3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 400mOhm @ 7A, 10V 5V @ 250µA 58 nC @ 10 V ±30V 1144 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG20N50E-GE3

SIHG20N50E-GE3

MOSFET N-CH 500V 19A TO247AC

Vishay Siliconix

2971 2.15
- +

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SIHG20N50E-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 19A (Tc) 10V 184mOhm @ 10A, 10V 4V @ 250µA 92 nC @ 10 V ±30V 1640 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
IAUA220N08S5N021AUMA1

IAUA220N08S5N021AUMA1

MOSFET_(75V 120V( PG-HSOF-5

Infineon Technologies

3358 2.10
- +

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IAUA220N08S5N021AUMA1

Datenblatt

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 220A (Tj) 6V, 10V 2.1mOhm @ 100A, 10V 3.8V @ 120µA 105 nC @ 10 V ±20V 7219 pF @ 40 V - 211W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHF15N65E-GE3

SIHF15N65E-GE3

MOSFET N-CH 650V 15A TO220

Vishay Siliconix

3878 2.16
- +

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Немедленный

SIHF15N65E-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1640 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPL60R299CPAUMA1

IPL60R299CPAUMA1

MOSFET N-CH 650V 11.1A 4VSON

Infineon Technologies

47646 1.64
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IPL60R299CPAUMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 11.1A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 22 nC @ 10 V ±20V 1100 pF @ 100 V - 96W (Tc) -40°C ~ 150°C (TJ) Surface Mount
R5021ANX

R5021ANX

MOSFET N-CH 500V 21A TO220FM

Rohm Semiconductor

3317 3.54
- +

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R5021ANX

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 21A (Tc) 10V 210mOhm @ 10.5A, 10V 4.5V @ 1mA 64 nC @ 10 V ±30V 2300 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
STB22N60DM6

STB22N60DM6

MOSFET N-CH 600V 15A D2PAK

STMicroelectronics

2950 2.16
- +

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Немедленный

STB22N60DM6

Datenblatt

Tape & Reel (TR) MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 240mOhm @ 7.5A, 10V 4.75V @ 250µA 20.6 nC @ 10 V ±25V 800 pF @ 100 V - 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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