Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPF039N08NF2SATMA1TRENCH 40<-<100V PG-TO263-7 |
3493 | 2.07 |
ДобавитьНемедленный |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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BUK9J0R9-40HXBUK9J0R9-40H/SOT1023/4 LEADS |
2838 | 2.13 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | - | Active | - | - | - | 220A (Tc) | - | - | - | - | - | - | - | - | - | - |
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SIHB15N65E-GE3MOSFET N-CH 650V 15A TO263 |
3709 | 2.13 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 96 nC @ 10 V | ±30V | 1640 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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2SK3004MOSFET N-CH 250V 18A TO220F |
2032 | 2.13 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 18A (Ta) | 10V | 250mOhm @ 9A, 10V | 4V @ 1mA | - | ±20V | 850 pF @ 10 V | - | 35W (Tc) | 150°C (TJ) | Through Hole |
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AOTF25S65MOSFET N-CH 650V 25A TO220-3F |
3035 | 2.13 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | aMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 25A (Tc) | 10V | 190mOhm @ 12.5A, 10V | 4V @ 250µA | 26.4 nC @ 10 V | ±30V | 1278 pF @ 100 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPB180N03S4L01ATMA1MOSFET N-CH 30V 180A TO263-7 |
3079 | 2.13 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 180A (Tc) | 4.5V, 10V | 1.05mOhm @ 100A, 10V | 2.2V @ 140µA | 239 nC @ 10 V | ±16V | 17600 pF @ 25 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IXTP1N80PMOSFET N-CH 800V 1A TO220AB |
2290 | 2.14 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 1A (Tc) | 10V | 14Ohm @ 500mA, 10V | 4V @ 50µA | 9 nC @ 10 V | ±20V | 250 pF @ 25 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFIBF30GPBFMOSFET N-CH 900V 1.9A TO220-3 |
2214 | 2.15 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 1.9A (Tc) | 10V | 3.7Ohm @ 1.1A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHA22N60AE-E3MOSFET N-CHANNEL 600V 20A TO220 |
2199 | 2.15 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 96 nC @ 10 V | ±30V | 1451 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPB80N04S303ATMA1MOSFET N-CH 40V 80A TO263-3 |
2352 | 2.15 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 3.2mOhm @ 80A, 10V | 4V @ 120µA | 110 nC @ 10 V | ±20V | 7300 pF @ 25 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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FDMS86150AFET 100V 4.85 MOHM PQFN56 |
3162 | 2.15 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 16A (Ta), 60A (Tc) | 6V, 10V | 4.85mOhm @ 16A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 4665 pF @ 50 V | - | 2.7W (Ta), 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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NVMFWS0D5N04XMT1G40V T10M IN S08FL GEN 2 PACKAGE |
2754 | 2.15 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 423A (Tc) | 10V | 0.52mOhm @ 50A, 10V | 3.5V @ 240µA | 100 nC @ 10 V | ±20V | 6250 pF @ 25 V | - | 163W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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TSM70N900CH C5GMOSFET N-CH 700V 4.5A TO251 |
2286 | 2.15 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 4.5A (Tc) | 10V | 900mOhm @ 1.5A, 10V | 4V @ 250µA | 9.7 nC @ 10 V | ±30V | 482 pF @ 100 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHG14N50D-E3MOSFET N-CH 500V 14A TO247AC |
3166 | 2.15 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Tc) | 10V | 400mOhm @ 7A, 10V | 5V @ 250µA | 58 nC @ 10 V | ±30V | 1144 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHG20N50E-GE3MOSFET N-CH 500V 19A TO247AC |
2971 | 2.15 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 19A (Tc) | 10V | 184mOhm @ 10A, 10V | 4V @ 250µA | 92 nC @ 10 V | ±30V | 1640 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IAUA220N08S5N021AUMA1MOSFET_(75V 120V( PG-HSOF-5 |
3358 | 2.10 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 220A (Tj) | 6V, 10V | 2.1mOhm @ 100A, 10V | 3.8V @ 120µA | 105 nC @ 10 V | ±20V | 7219 pF @ 40 V | - | 211W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SIHF15N65E-GE3MOSFET N-CH 650V 15A TO220 |
3878 | 2.16 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 96 nC @ 10 V | ±30V | 1640 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPL60R299CPAUMA1MOSFET N-CH 650V 11.1A 4VSON |
47646 | 1.64 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT),Bulk | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 11.1A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 22 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 96W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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R5021ANXMOSFET N-CH 500V 21A TO220FM |
3317 | 3.54 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 21A (Tc) | 10V | 210mOhm @ 10.5A, 10V | 4.5V @ 1mA | 64 nC @ 10 V | ±30V | 2300 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | Through Hole |
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STB22N60DM6MOSFET N-CH 600V 15A D2PAK |
2950 | 2.16 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | MDmesh™ M6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 240mOhm @ 7.5A, 10V | 4.75V @ 250µA | 20.6 nC @ 10 V | ±25V | 800 pF @ 100 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |