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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP120N04S402AKSA1

IPP120N04S402AKSA1

MOSFET N-CH 40V 120A TO220-3

Infineon Technologies

2797 1.00
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IPP120N04S402AKSA1

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Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.1mOhm @ 100A, 10V 4V @ 110µA 134 nC @ 10 V ±20V 10740 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Through Hole
STF17NF25

STF17NF25

MOSFET N-CH 250V 17A TO220FP

STMicroelectronics

3321 2.17
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STF17NF25

Datenblatt

Tube STripFET™ II Obsolete N-Channel MOSFET (Metal Oxide) 250 V 17A (Tc) 10V 165mOhm @ 8.5A, 10V 4V @ 250µA 29.5 nC @ 10 V ±20V 1000 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI032N06N3GAKSA1

IPI032N06N3GAKSA1

MOSFET N-CH 60V 120A TO262-3

Infineon Technologies

900 1.46
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IPI032N06N3GAKSA1

Datenblatt

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3.2mOhm @ 100A, 10V 4V @ 118µA 165 nC @ 10 V ±20V 13000 pF @ 30 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA65R280C6XKSA1

IPA65R280C6XKSA1

MOSFET N-CH 650V 13.8A TO220

Infineon Technologies

3137 2.18
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IPA65R280C6XKSA1

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Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 13.8A (Tc) 10V 280mOhm @ 4.4A, 10V 3.5V @ 440µA 45 nC @ 10 V ±20V 950 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHH14N60E-T1-GE3

SIHH14N60E-T1-GE3

MOSFET N-CH 600V 16A PPAK 8 X 8

Vishay Siliconix

3993 3.85
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SIHH14N60E-T1-GE3

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 255mOhm @ 7A, 10V 4V @ 250µA 82 nC @ 10 V ±30V 1416 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMNH4005SCT

DMNH4005SCT

MOSFET N-CH 40V 150A TO220AB

Diodes Incorporated

3294 2.18
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DMNH4005SCT

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Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 10V 4mOhm @ 20A, 10V 3V @ 250µA 48 nC @ 10 V 20V 2846 pF @ 20 V - 165W (Tc) -55°C ~ 175°C (TJ) Through Hole
RSJ800N06TL

RSJ800N06TL

MOSFET N-CH 60V 80A LPTS

Rohm Semiconductor

1990 3.59
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Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Ta) - - - - - - - - - Surface Mount
NVMFS5C612NLWFAFT3G

NVMFS5C612NLWFAFT3G

MOSFET N-CH 60V 38A/250A 5DFN

onsemi

3061 2.18
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NVMFS5C612NLWFAFT3G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 38A (Ta), 250A (Tc) 4.5V, 10V 1.36mOhm @ 50A, 10V 2V @ 250µA 91 nC @ 10 V ±20V 6660 pF @ 25 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AONV210A60

AONV210A60

MOSFET N-CH 600V 4.1A/20A 4DFN

Alpha & Omega Semiconductor Inc.

3420 2.19
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AONV210A60

Datenblatt

Tape & Reel (TR),Cut Tape (CT) aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 4.1A (Ta), 20A (Tc) 10V 210mOhm @ 7.6A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1935 pF @ 100 V - 8.3W (Ta), 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK12A50D(STA4,Q,M)

TK12A50D(STA4,Q,M)

MOSFET N-CH 500V 12A TO220SIS

Toshiba Semiconductor and Storage

3920 2.19
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TK12A50D(STA4,Q,M)

Datenblatt

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Ta) 10V 520mOhm @ 6A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK13A45D(STA4,Q,M)

TK13A45D(STA4,Q,M)

MOSFET N-CH 450V 13A TO220SIS

Toshiba Semiconductor and Storage

3337 2.19
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TK13A45D(STA4,Q,M)

Datenblatt

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 450 V 13A (Ta) 10V 460mOhm @ 6.5A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
SIE802DF-T1-E3

SIE802DF-T1-E3

MOSFET N-CH 30V 60A 10POLARPAK

Vishay Siliconix

2928 2.19
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SIE802DF-T1-E3

Datenblatt

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 1.9mOhm @ 23.6A, 10V 2.7V @ 250µA 160 nC @ 10 V ±20V 7000 pF @ 15 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIE802DF-T1-GE3

SIE802DF-T1-GE3

MOSFET N-CH 30V 60A 10POLARPAK

Vishay Siliconix

2627 2.19
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SIE802DF-T1-GE3

Datenblatt

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 1.9mOhm @ 23.6A, 10V 2.7V @ 250µA 160 nC @ 10 V ±20V 7000 pF @ 15 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB009N03LGATMA1

IPB009N03LGATMA1

MOSFET N-CH 30V 180A TO263-7

Infineon Technologies

2352 3.99
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IPB009N03LGATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 180A (Tc) 4.5V, 10V 0.95mOhm @ 100A, 10V 2.2V @ 250µA 227 nC @ 10 V ±20V 25000 pF @ 15 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOT270AL

AOT270AL

MOSFET N-CH 75V 21.5A/140A TO220

Alpha & Omega Semiconductor Inc.

3879 2.20
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AOT270AL

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 75 V 21.5A (Ta), 140A (Tc) 6V, 10V 2.6mOhm @ 20A, 10V 3.3V @ 250µA 206 nC @ 10 V ±20V 10830 pF @ 37.5 V - 2.1W (Ta), 500W (Tc) -55°C ~ 175°C (TJ) Through Hole
R6008FNJTL

R6008FNJTL

MOSFET N-CH 600V 8A LPTS

Rohm Semiconductor

1751 3.61
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R6008FNJTL

Datenblatt

Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V 950mOhm @ 4A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 580 pF @ 25 V - 50W (Tc) 150°C (TJ) Surface Mount
R6015FNJTL

R6015FNJTL

MOSFET N-CH 600V 15A LPT

Rohm Semiconductor

980 3.61
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R6015FNJTL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) * Not For New Designs - - - - - - - - - - - - - -
AOT280L

AOT280L

MOSFET N-CH 80V 20.5A/140A TO220

Alpha & Omega Semiconductor Inc.

2338 2.20
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AOT280L

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 80 V 20.5A (Ta), 140A (Tc) 6V, 10V 2.7mOhm @ 20A, 10V 3.4V @ 250µA 224 nC @ 10 V ±20V 11135 pF @ 40 V - 2.1W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) Through Hole
SQC40016E_DFFR

SQC40016E_DFFR

N-CHANNEL 40-V (D-S) MOSFET

Vishay Siliconix

2055 2.20
- +

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Bulk - Active - - - - - - - - - - - - - -
IPA040N08NM5SXKSA1

IPA040N08NM5SXKSA1

TRENCH 40<-<100V PG-TO220-3

Infineon Technologies

3259 2.13
- +

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IPA040N08NM5SXKSA1

Datenblatt

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 75A (Tc) 6V, 10V 4mOhm @ 38A, 10V 3.8V @ 109µA 93 nC @ 10 V ±20V 6400 pF @ 40 V - 39W (Tc) -55°C ~ 175°C (TJ) Through Hole
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