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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK9A55DA(STA4,Q,M)

TK9A55DA(STA4,Q,M)

MOSFET N-CH 550V 8.5A TO220SIS

Toshiba Semiconductor and Storage

2868 1.79
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TK9A55DA(STA4,Q,M)

Datenblatt

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 8.5A (Ta) 10V 860mOhm @ 4.3A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
TK9A60D(STA4,Q,M)

TK9A60D(STA4,Q,M)

MOSFET N-CH 600V 9A TO220SIS

Toshiba Semiconductor and Storage

2953 1.79
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TK9A60D(STA4,Q,M)

Datenblatt

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Ta) 10V 830mOhm @ 4.5A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
VN1206L-G-P002

VN1206L-G-P002

MOSFET N-CH 120V 230MA TO92-3

Microchip Technology

2162 1.79
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VN1206L-G-P002

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 120 V 230mA (Tj) 2.5V, 10V 6Ohm @ 500mA, 10V 2V @ 1mA - ±30V 125 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK762R6-60E,118

BUK762R6-60E,118

MOSFET N-CH 60V 120A D2PAK

Nexperia USA Inc.

3948 1.79
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BUK762R6-60E,118

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.6mOhm @ 25A, 10V 4V @ 1mA 140 nC @ 10 V ±20V 10170 pF @ 25 V - 324W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMJ65H650SCTI

DMJ65H650SCTI

MOSFET N-CH 650V 10A ITO220AB

Diodes Incorporated

3256 1.80
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DMJ65H650SCTI

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 600mOhm @ 2.4A, 10V 4V @ 250µA 12.9 nC @ 10 V ±30V 639 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD65R420CFDAATMA1

IPD65R420CFDAATMA1

MOSFET N-CH 650V 8.7A TO252-3

Infineon Technologies

2437 1.00
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IPD65R420CFDAATMA1

Datenblatt

Tape & Reel (TR),Bulk Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 345µA 32 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -40°C ~ 150°C (TJ) Surface Mount
NTPF150N65S3HF

NTPF150N65S3HF

MOSFET N-CH 650V 24A TO220FP

onsemi

2416 1.80
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NTPF150N65S3HF

Datenblatt

Tube FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 150mOhm @ 12A, 10V 5V @ 540µA 43 nC @ 10 V ±30V 1985 pF @ 400 V - 192W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM10NC60CF C0G

TSM10NC60CF C0G

MOSFET N-CH 600V 10A ITO220S

Taiwan Semiconductor Corporation

2769 1.80
- +

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TSM10NC60CF C0G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 2.5A, 10V 4.5V @ 250µA 33 nC @ 10 V ±30V 1652 pF @ 50 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFR3710ZTRL

AUIRFR3710ZTRL

MOSFET N-CH 100V 42A DPAK

Infineon Technologies

2598 1.80
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AUIRFR3710ZTRL

Datenblatt

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) - 18mOhm @ 33A, 10V 4V @ 250µA 100 nC @ 10 V - 2930 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQM50N04-4M1_GE3

SQM50N04-4M1_GE3

MOSFET N-CH 40V 50A TO263

Vishay Siliconix

3430 3.04
- +

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SQM50N04-4M1_GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 4.1mOhm @ 30A, 10V 3.5V @ 250µA 105 nC @ 10 V ±20V 6715 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP77N06S212AKSA2

IPP77N06S212AKSA2

MOSFET N-CH 55V 77A TO220-3

Infineon Technologies

2681 1.80
- +

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IPP77N06S212AKSA2

Datenblatt

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 77A (Tc) 10V 12mOhm @ 38A, 10V 4V @ 93µA 60 nC @ 10 V ±20V 1770 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL7734PBF

IRFSL7734PBF

MOSFET N-CH 75V 183A TO262

Infineon Technologies

3612 1.00
- +

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IRFSL7734PBF

Datenblatt

Bulk,Tube HEXFET®, StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 75 V 183A (Tc) 6V, 10V 3.5mOhm @ 100A, 10V 3.7V @ 250µA 270 nC @ 10 V ±20V 10150 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP047N08-F102

FDP047N08-F102

MOSFET N-CH 75V 164A TO220-3

onsemi

2017 1.00
- +

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Bulk,Tube - Active N-Channel MOSFET (Metal Oxide) 75 V 164A (Tc) 10V 4.7Ohm @ 80A, 10V 4.5V @ 250µA 152 nC @ 10 V ±20V 9415 pF @ 25 V - 268W (Tc) -55°C ~ 175°C (TJ) Through Hole
TSM60NB600CH C5G

TSM60NB600CH C5G

MOSFET N-CHANNEL 600V 7A TO251

Taiwan Semiconductor Corporation

3248 1.81
- +

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TSM60NB600CH C5G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 2.1A, 10V 4V @ 250µA 13 nC @ 10 V ±30V 516 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC30SPBF

IRFBC30SPBF

MOSFET N-CH 600V 3.6A D2PAK

Vishay Siliconix

2189 1.81
- +

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IRFBC30SPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF840LPBF

IRF840LPBF

MOSFET N-CH 500V 8A TO263AB

Vishay Siliconix

3202 1.82
- +

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Немедленный

IRF840LPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFP150A

IRFP150A

MOSFET N-CH 100V 43A TO3PN

onsemi

3443 1.82
- +

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IRFP150A

Datenblatt

Tube - Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 43A (Tc) 10V 40mOhm @ 21.5A, 10V 4V @ 250µA 97 nC @ 10 V - 2270 pF @ 25 V - 193W (Tc) -55°C ~ 175°C (TJ) Through Hole
TSM35N10CP ROG

TSM35N10CP ROG

MOSFET N-CHANNEL 100V 32A TO252

Taiwan Semiconductor Corporation

3608 1.82
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TSM35N10CP ROG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 32A (Tc) 4.5V, 10V 37mOhm @ 10A, 10V 3V @ 250µA 34 nC @ 10 V ±20V 1598 pF @ 30 V - 83.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTY32P05T-TRL

IXTY32P05T-TRL

MOSFET P-CH 50V 32A TO252

IXYS

3711 1.82
- +

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Tape & Reel (TR) TrenchP™ Active P-Channel MOSFET (Metal Oxide) 50 V 32A (Tc) 10V 39mOhm @ 16A, 10V 4.5V @ 250µA 46 nC @ 10 V ±15V 1975 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQM100N04-2M7_GE3

SQM100N04-2M7_GE3

MOSFET N-CH 40V 100A TO263

Vishay Siliconix

3732 1.82
- +

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Немедленный

SQM100N04-2M7_GE3

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.7mOhm @ 30A, 10V 3.5V @ 250µA 145 nC @ 10 V ±20V 7910 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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