Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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IPB80P03P405ATMA1MOSFET P-CH 30V 80A TO263-3 |
3527 | 1.82 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | OptiMOS™ | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 10V | 4.7mOhm @ 80A, 10V | 4V @ 253µA | 130 nC @ 10 V | ±20V | 10300 pF @ 25 V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPB80P03P4L04ATMA1MOSFET P-CH 30V 80A TO263-3 |
2441 | 1.82 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | OptiMOS™ | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 4.1mOhm @ 80A, 10V | 2V @ 253µA | 160 nC @ 10 V | +5V, -16V | 11300 pF @ 25 V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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STF12N50M2MOSFET N-CH 500V 10A TO220FP |
2734 | 1.82 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | MDmesh™ II Plus | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 10A (Tc) | 10V | 380mOhm @ 5A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±25V | 560 pF @ 100 V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXTA32P05T-TRLMOSFET P-CH 50V 32A TO263 |
3620 | 1.82 |
ДобавитьНемедленный |
Tape & Reel (TR) | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 50 V | 32A (Tc) | 10V | 39mOhm @ 16A, 10V | 4.5V @ 250µA | 46 nC @ 10 V | ±15V | 1975 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
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BUK964R2-55B,118MOSFET N-CH 55V 75A D2PAK |
2780 | 1.82 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 4.5V, 10V | 3.7mOhm @ 25A, 10V | 2V @ 1mA | 95 nC @ 5 V | ±15V | 10220 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRF6726MTRPBFMOSFET N-CH 30V 32A DIRECTFET |
2480 | 3.32 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT),Bulk | HEXFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.7mOhm @ 32A, 10V | 2.35V @ 150µA | 77 nC @ 4.5 V | ±20V | 6140 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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IRF7780MTRPBFMOSFET N-CH 75V 89A DIRECTFET |
3041 | 3.32 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | StrongIRFET™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 75 V | 89A (Tc) | 6V, 10V | 5.7mOhm @ 53A, 10V | 3.7V @ 150µA | 186 nC @ 10 V | ±20V | 6504 pF @ 25 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRFSL3206PBFMOSFET N-CH 60V 120A TO262 |
2864 | 1.00 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk,Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 3mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | ±20V | 6540 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IXTA110N055T2-TRLMOSFET N-CH 55V 110A TO263 |
3198 | 1.83 |
ДобавитьНемедленный |
Tape & Reel (TR) | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 110A (Tc) | 10V | 6.6mOhm @ 25A, 10V | 4V @ 250µA | 57 nC @ 10 V | ±20V | 3060 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
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AUIRFZ48NMOSFET N-CH 55V 69A TO220AB |
3398 | 1.83 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 69A (Tc) | 10V | 14mOhm @ 40A, 10V | 4V @ 100µA | 63 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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AUIRFR8405TRLMOSFET N-CH 40V 100A DPAK |
879 | 1.40 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 1.98mOhm @ 90A, 10V | 3.9V @ 100µA | 155 nC @ 10 V | ±20V | 5171 pF @ 25 V | - | 163W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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VP0550N3-G-P013MOSFET P-CH 500V 54MA TO92-3 |
3397 | 1.84 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Box (TB) | - | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 54mA (Tj) | 5V, 10V | 125Ohm @ 10mA, 10V | 4.5V @ 1mA | - | ±20V | 70 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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BUK764R2-80E,118MOSFET N-CH 80V 120A D2PAK |
2788 | 1.84 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 4.2mOhm @ 25A, 10V | 4V @ 1mA | 136 nC @ 10 V | ±20V | 10426 pF @ 25 V | - | 324W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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NVMFWS2D3P04M8LT1GMV8 P INITIAL PROGRAM |
3751 | 1.84 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 31A (Ta), 222A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.4V @ 2.7mA | 157 nC @ 10 V | ±20V | 5985 pF @ 20 V | - | 3.8W (Ta), 205W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRFSL4410ZPBFMOSFET N-CH 100V 97A TO262 |
2389 | 1.84 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 97A (Tc) | 10V | 9mOhm @ 58A, 10V | 4V @ 150µA | 120 nC @ 10 V | ±20V | 4820 pF @ 50 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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FQA16N50-F109MOSFET N-CH 500V 16A TO3P |
2693 | 1.84 |
ДобавитьНемедленный |
Tube,Tube | QFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 320mOhm @ 8A, 10V | 5V @ 250µA | 75 nC @ 10 V | ±30V | 3000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
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HUF75639S3MOSFET N-CH 100V 56A I2PAK |
2300 | 1.84 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube,Tube | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | 4V @ 250µA | 130 nC @ 20 V | ±20V | 2000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRF1405STRRPBFMOSFET N-CH 55V 131A D2PAK |
3419 | 1.84 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 55 V | 131A (Tc) | 10V | 5.3mOhm @ 101A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 5480 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPB160N04S4LH1ATMA1MOSFET N-CH 40V 160A TO263-7 |
2194 | 1.84 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101, OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 4.5V, 10V | 1.5mOhm @ 100A, 10V | 2.2V @ 110µA | 190 nC @ 10 V | +20V, -16V | 14950 pF @ 25 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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AOB15S65LMOSFET N-CH 650V 15A TO263 |
2716 | 1.84 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | aMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 290mOhm @ 7.5A, 10V | 4V @ 250µA | 17.2 nC @ 10 V | ±30V | 841 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |