Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
EPC2306ENGRTTRANS GAN 100V .0038OHM3X5MM QFN |
5000 | 5.83 |
ДобавитьНемедленный |
Tape & Reel (TR),Cut Tape (CT) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
R6007JNXC7GMOSFET N-CH 600V 7A TO220FM |
2036 | 3.06 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 15V | 780mOhm @ 3.5A, 15V | 7V @ 1mA | 17.5 nC @ 15 V | ±30V | 475 pF @ 100 V | - | 46W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
STF25N60M2-EPMOSFET N-CH 600V 18A TO220FP |
982 | 3.15 |
ДобавитьНемедленный |
Datenblatt |
Tube | MDmesh™ M2-EP | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 188mOhm @ 9A, 10V | 4.75V @ 250µA | 29 nC @ 10 V | ±25V | 1090 pF @ 100 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
FDPF190N15AMOSFET N-CH 150V 27.4A TO220F |
1000 | 3.17 |
ДобавитьНемедленный |
Datenblatt |
Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 27.4A (Tc) | 10V | 19mOhm @ 27.4A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±20V | 2685 pF @ 25 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
FCPF7N60NTMOSFET N-CH 600V 6.8A TO220F |
1630 | 3.18 |
ДобавитьНемедленный |
Datenblatt |
Tube | SupreMOS™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.8A (Tc) | 10V | 520mOhm @ 3.4A, 10V | 4V @ 250µA | 35.6 nC @ 10 V | ±30V | 960 pF @ 100 V | - | 30.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IPA60R230P6XKSA1MOSFET N-CH 600V 16.8A TO220-FP |
166 | 3.35 |
ДобавитьНемедленный |
Datenblatt |
Tube | CoolMOS™ P6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 16.8A (Tc) | 10V | 230mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31 nC @ 10 V | ±20V | 1450 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
AOTF380A60LMOSFET N-CH 600V 11A TO220F |
2000 | 3.39 |
ДобавитьНемедленный |
Datenblatt |
Tube | aMOS5™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 3.8V @ 250µA | 20 nC @ 10 V | ±20V | 955 pF @ 100 V | - | 27W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
STP8NK80ZFPMOSFET N-CH 800V 6.2A TO220FP |
986 | 3.41 |
ДобавитьНемедленный |
Datenblatt |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6.2A (Tc) | 10V | 1.5Ohm @ 3.1A, 10V | 4.5V @ 100µA | 46 nC @ 10 V | ±30V | 1320 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
TSM7ND60CIMOSFET N-CH 600V 7A ITO220 |
3970 | 3.53 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 1.2Ohm @ 2A, 10V | 3.8V @ 250µA | 25 nC @ 10 V | ±30V | 1108 pF @ 50 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
TSM7ND65CIMOSFET N-CH 650V 7A ITO220 |
3916 | 3.53 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 1.35Ohm @ 1.8A, 10V | 3.8V @ 250µA | 25 nC @ 10 V | ±30V | 1124 pF @ 50 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
R6009JNXC7GMOSFET N-CH 600V 9A TO220FM |
1909 | 3.55 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 15V | 585mOhm @ 4.5A, 15V | 7V @ 1.38mA | 22 nC @ 15 V | ±30V | 645 pF @ 100 V | - | 53W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
R6009ENXMOSFET N-CH 600V 9A TO220FM |
400 | 3.72 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 535mOhm @ 2.8A, 10V | 4V @ 1mA | 23 nC @ 10 V | ±20V | 430 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | Through Hole | |
IRFPC40PBFMOSFET N-CH 600V 6.8A TO247-3 |
500 | 3.85 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.8A (Tc) | 10V | 1.2Ohm @ 4.1A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
R6024ENXMOSFET N-CH 600V 24A TO220FM |
472 | 3.99 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 165mOhm @ 11.3A, 10V | 4V @ 1mA | 70 nC @ 10 V | ±20V | 1650 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | Through Hole | |
IRFB7740PBFMOSFET N-CH 75V 87A TO220AB |
1126 | 1.73 |
ДобавитьНемедленный |
Datenblatt |
Tube | StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 87A (Tc) | 6V, 10V | 7.3mOhm @ 52A, 10V | 3.7V @ 100µA | 122 nC @ 10 V | ±20V | 4650 pF @ 25 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
TK22A65X5,S5XX35 PB-F POWER MOSFET TRANSISTOR |
178 | 4.31 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Ta) | 10V | 160mOhm @ 11A, 10V | 4.5V @ 1.1mA | 50 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 45W (Tc) | 150°C | Through Hole | |
SIHP21N80AE-GE3MOSFET N-CH 800V 17.4A TO220AB |
987 | 4.55 |
ДобавитьНемедленный |
Datenblatt |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17.4A (Tc) | 10V | 235mOhm @ 11A, 10V | 4V @ 250µA | 72 nC @ 10 V | ±30V | 1388 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IPA60R160P6XKSA1MOSFET N-CH 600V 23.8A TO220-FP |
495 | 4.61 |
ДобавитьНемедленный |
Datenblatt |
Tube | CoolMOS™ P6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23.8A (Tc) | 10V | 160mOhm @ 9A, 10V | 4.5V @ 750µA | 44 nC @ 10 V | ±20V | 2080 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IRFBC40ASPBFMOSFET N-CH 600V 6.2A D2PAK |
484 | 4.66 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±30V | 1036 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
SIHG21N60EF-GE3MOSFET N-CH 600V 21A TO247AC |
118 | 4.69 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 176mOhm @ 11A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±30V | 2030 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |