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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
EPC2306ENGRT

EPC2306ENGRT

TRANS GAN 100V .0038OHM3X5MM QFN

EPC

5000 5.83
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Немедленный

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
R6007JNXC7G

R6007JNXC7G

MOSFET N-CH 600V 7A TO220FM

Rohm Semiconductor

2036 3.06
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Немедленный

R6007JNXC7G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 15V 780mOhm @ 3.5A, 15V 7V @ 1mA 17.5 nC @ 15 V ±30V 475 pF @ 100 V - 46W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF25N60M2-EP

STF25N60M2-EP

MOSFET N-CH 600V 18A TO220FP

STMicroelectronics

982 3.15
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STF25N60M2-EP

Datenblatt

Tube MDmesh™ M2-EP Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 188mOhm @ 9A, 10V 4.75V @ 250µA 29 nC @ 10 V ±25V 1090 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF190N15A

FDPF190N15A

MOSFET N-CH 150V 27.4A TO220F

onsemi

1000 3.17
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FDPF190N15A

Datenblatt

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 27.4A (Tc) 10V 19mOhm @ 27.4A, 10V 4V @ 250µA 39 nC @ 10 V ±20V 2685 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF7N60NT

FCPF7N60NT

MOSFET N-CH 600V 6.8A TO220F

onsemi

1630 3.18
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FCPF7N60NT

Datenblatt

Tube SupreMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tc) 10V 520mOhm @ 3.4A, 10V 4V @ 250µA 35.6 nC @ 10 V ±30V 960 pF @ 100 V - 30.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R230P6XKSA1

IPA60R230P6XKSA1

MOSFET N-CH 600V 16.8A TO220-FP

Infineon Technologies

166 3.35
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IPA60R230P6XKSA1

Datenblatt

Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 16.8A (Tc) 10V 230mOhm @ 6.4A, 10V 4.5V @ 530µA 31 nC @ 10 V ±20V 1450 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOTF380A60L

AOTF380A60L

MOSFET N-CH 600V 11A TO220F

Alpha & Omega Semiconductor Inc.

2000 3.39
- +

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AOTF380A60L

Datenblatt

Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 3.8V @ 250µA 20 nC @ 10 V ±20V 955 pF @ 100 V - 27W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP8NK80ZFP

STP8NK80ZFP

MOSFET N-CH 800V 6.2A TO220FP

STMicroelectronics

986 3.41
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Немедленный

STP8NK80ZFP

Datenblatt

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 800 V 6.2A (Tc) 10V 1.5Ohm @ 3.1A, 10V 4.5V @ 100µA 46 nC @ 10 V ±30V 1320 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM7ND60CI

TSM7ND60CI

MOSFET N-CH 600V 7A ITO220

Taiwan Semiconductor Corporation

3970 3.53
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Немедленный

TSM7ND60CI

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 1.2Ohm @ 2A, 10V 3.8V @ 250µA 25 nC @ 10 V ±30V 1108 pF @ 50 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM7ND65CI

TSM7ND65CI

MOSFET N-CH 650V 7A ITO220

Taiwan Semiconductor Corporation

3916 3.53
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TSM7ND65CI

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 1.35Ohm @ 1.8A, 10V 3.8V @ 250µA 25 nC @ 10 V ±30V 1124 pF @ 50 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6009JNXC7G

R6009JNXC7G

MOSFET N-CH 600V 9A TO220FM

Rohm Semiconductor

1909 3.55
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Немедленный

R6009JNXC7G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 15V 585mOhm @ 4.5A, 15V 7V @ 1.38mA 22 nC @ 15 V ±30V 645 pF @ 100 V - 53W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6009ENX

R6009ENX

MOSFET N-CH 600V 9A TO220FM

Rohm Semiconductor

400 3.72
- +

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Немедленный

R6009ENX

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 535mOhm @ 2.8A, 10V 4V @ 1mA 23 nC @ 10 V ±20V 430 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
IRFPC40PBF

IRFPC40PBF

MOSFET N-CH 600V 6.8A TO247-3

Vishay Siliconix

500 3.85
- +

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Немедленный

IRFPC40PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tc) 10V 1.2Ohm @ 4.1A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6024ENX

R6024ENX

MOSFET N-CH 600V 24A TO220FM

Rohm Semiconductor

472 3.99
- +

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Немедленный

R6024ENX

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 165mOhm @ 11.3A, 10V 4V @ 1mA 70 nC @ 10 V ±20V 1650 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
IRFB7740PBF

IRFB7740PBF

MOSFET N-CH 75V 87A TO220AB

Infineon Technologies

1126 1.73
- +

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Немедленный

IRFB7740PBF

Datenblatt

Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 75 V 87A (Tc) 6V, 10V 7.3mOhm @ 52A, 10V 3.7V @ 100µA 122 nC @ 10 V ±20V 4650 pF @ 25 V - 143W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK22A65X5,S5X

TK22A65X5,S5X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

178 4.31
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Немедленный

TK22A65X5,S5X

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Ta) 10V 160mOhm @ 11A, 10V 4.5V @ 1.1mA 50 nC @ 10 V ±30V 2400 pF @ 300 V - 45W (Tc) 150°C Through Hole
SIHP21N80AE-GE3

SIHP21N80AE-GE3

MOSFET N-CH 800V 17.4A TO220AB

Vishay Siliconix

987 4.55
- +

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Немедленный

SIHP21N80AE-GE3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 17.4A (Tc) 10V 235mOhm @ 11A, 10V 4V @ 250µA 72 nC @ 10 V ±30V 1388 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R160P6XKSA1

IPA60R160P6XKSA1

MOSFET N-CH 600V 23.8A TO220-FP

Infineon Technologies

495 4.61
- +

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Немедленный

IPA60R160P6XKSA1

Datenblatt

Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC40ASPBF

IRFBC40ASPBF

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix

484 4.66
- +

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Немедленный

IRFBC40ASPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 1036 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHG21N60EF-GE3

SIHG21N60EF-GE3

MOSFET N-CH 600V 21A TO247AC

Vishay Siliconix

118 4.69
- +

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Немедленный

SIHG21N60EF-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 176mOhm @ 11A, 10V 4V @ 250µA 84 nC @ 10 V ±30V 2030 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
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