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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
UF3C065040T3S

UF3C065040T3S

MOSFET N-CH 650V 54A TO220-3

UnitedSiC

1000 13.71
- +

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UF3C065040T3S

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Tube - Active N-Channel - 650 V 54A (Tc) 12V 52mOhm @ 40A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 326W (Tc) -55°C ~ 175°C (TJ) Through Hole
STW28NM50N

STW28NM50N

MOSFET N-CH 500V 21A TO247-3

STMicroelectronics

536 8.39
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STW28NM50N

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Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 500 V 21A (Tc) 10V 158mOhm @ 10.5A, 10V 4V @ 250µA 50 nC @ 10 V ±25V 1735 pF @ 25 V - 150W (Tc) 150°C (TJ) Through Hole
IPP65R099CFD7AAKSA1

IPP65R099CFD7AAKSA1

MOSFET N-CH 650V 24A TO220-3

Infineon Technologies

346 8.46
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IPP65R099CFD7AAKSA1

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Tube Automotive, AEC-Q101, CoolMOS™ CFD7A Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 99mOhm @ 12.5A, 10V 4.5V @ 630µA 53 nC @ 10 V ±20V 2513 pF @ 400 V - 127W (Tc) -40°C ~ 150°C (TJ) Through Hole
FCH043N60

FCH043N60

MOSFET N-CH 600V 75A TO247-3

onsemi

255 17.15
- +

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FCH043N60

Datenblatt

Tube SuperFET® II Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 75A (Tc) 10V 43mOhm @ 38A, 10V 3.5V @ 250µA 215 nC @ 10 V ±20V 12225 pF @ 400 V - 592W (Tc) -55°C ~ 150°C (TJ) Through Hole
C3M0045065D

C3M0045065D

GEN 3 650V 45 M SIC MOSFET

Wolfspeed, Inc.

450 17.72
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C3M0045065D

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Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 49A (Tc) 15V 60mOhm @ 17.6A, 15V 3.6V @ 4.84mA 63 nC @ 15 V +19V, -8V 1621 pF @ 600 V - 176W (Tc) -40°C ~ 175°C (TJ) Through Hole
C3M0045065K

C3M0045065K

GEN 3 650V 49A SIC MOSFET

Wolfspeed, Inc.

1128 17.72
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C3M0045065K

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Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 49A (Tc) 15V 60mOhm @ 17.6A, 15V 3.6V @ 4.84mA 63 nC @ 15 V +19V, -8V 1621 pF @ 600 V - 176W (Tc) -40°C ~ 175°C (TJ) Through Hole
IPP60R022S7XKSA1

IPP60R022S7XKSA1

MOSFET N-CH 600V 23A TO220-3

Infineon Technologies

964 18.10
- +

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Tube CoolMOS™S7 Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 12V 22mOhm @ 23A, 12V 4.5V @ 1.44mA 150 nC @ 12 V ±20V 5639 pF @ 300 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMZ120R060M1HXKSA1

IMZ120R060M1HXKSA1

SICFET N-CH 1.2KV 36A TO247-4

Infineon Technologies

1074 18.32
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IMZ120R060M1HXKSA1

Datenblatt

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 36A (Tc) 15V, 18V 78mOhm @ 13A, 18V 5.7V @ 5.6mA 31 nC @ 18 V +23V, -7V 1060 pF @ 800 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
E3M0075120D

E3M0075120D

1200V AUTOMOTIVE SIC 75MOHM FET

Wolfspeed, Inc.

243 18.73
- +

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E3M0075120D

Datenblatt

Tube E-Series, Automotive Active N-Channel SiCFET (Silicon Carbide) 1200 V 32A (Tc) 15V 97.5mOhm @ 17.9A, 15V 3.6V @ 5mA 57 nC @ 15 V +19V, -8V 1480 pF @ 1000 V - 145W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTQ40N50L2

IXTQ40N50L2

MOSFET N-CH 500V 40A TO3P

IXYS

1107 18.96
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IXTQ40N50L2

Datenblatt

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 500 V 40A (Tc) 10V 170mOhm @ 20A, 10V 4.5V @ 250µA 320 nC @ 10 V ±20V 10400 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMZA65R048M1HXKSA1

IMZA65R048M1HXKSA1

MOSFET 650V NCH SIC TRENCH

Infineon Technologies

1432 19.20
- +

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Tube - Active - - - 39A (Tc) - - - - - - - - - -
UF3C065030K3S

UF3C065030K3S

SICFET N-CH 650V 85A TO247-3

UnitedSiC

407 19.91
- +

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UF3C065030K3S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 650 V 85A (Tc) 12V 35mOhm @ 50A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 441W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFR48N60P

IXFR48N60P

MOSFET N-CH 600V 32A ISOPLUS247

IXYS

208 19.93
- +

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IXFR48N60P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 150mOhm @ 24A, 10V 5V @ 8mA 150 nC @ 10 V ±30V 8860 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
TP65H050WSQA

TP65H050WSQA

GANFET N-CH 650V 36A TO247-3

Transphorm

213 20.67
- +

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TP65H050WSQA

Datenblatt

Tube Automotive, AEC-Q101 Active N-Channel GaNFET (Cascode Gallium Nitride FET) 650 V 36A (Tc) 10V 60mOhm @ 25A, 10V 4.8V @ 700µA 24 nC @ 10 V ±20V 1000 pF @ 400 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT60N60BCSG

APT60N60BCSG

MOSFET N-CH 600V 60A TO247

Microchip Technology

787 21.03
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APT60N60BCSG

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 45mOhm @ 44A, 10V 3.9V @ 3mA 190 nC @ 10 V ±30V 7200 pF @ 25 V - 431W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT40N50L2

IXTT40N50L2

MOSFET N-CH 500V 40A TO268

IXYS

300 21.05
- +

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Немедленный

IXTT40N50L2

Datenblatt

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 500 V 40A (Tc) 10V 170mOhm @ 20A, 10V 4.5V @ 250µA 320 nC @ 10 V ±20V 10400 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SCT20N120AG

SCT20N120AG

SICFET N-CH 1200V 20A HIP247

STMicroelectronics

551 21.24
- +

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SCT20N120AG

Datenblatt

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 20A (Tc) 20V 239mOhm @ 10A, 20V 3.5V @ 1mA 45 nC @ 20 V +25V, -10V 650 pF @ 400 V - 153W (Tc) -55°C ~ 200°C (TJ) Through Hole
IPW65R048CFDAFKSA1

IPW65R048CFDAFKSA1

MOSFET N-CH 650V 63.3A TO247-3

Infineon Technologies

221 21.49
- +

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IPW65R048CFDAFKSA1

Datenblatt

Tube Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 63.3A (Tc) 10V 48mOhm @ 29.4A, 10V 4.5V @ 2.9mA 270 nC @ 10 V ±20V 7440 pF @ 100 V - 500W (Tc) -40°C ~ 150°C (TJ) Through Hole
IXFK78N50P3

IXFK78N50P3

MOSFET N-CH 500V 78A TO264AA

IXYS

473 21.83
- +

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IXFK78N50P3

Datenblatt

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 78A (Tc) 10V 68mOhm @ 500mA, 10V 5V @ 4mA 147 nC @ 10 V ±30V 9900 pF @ 25 V - 1130W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCT3105KLGC11

SCT3105KLGC11

SICFET N-CH 1200V 24A TO247N

Rohm Semiconductor

183 22.40
- +

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Немедленный

SCT3105KLGC11

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 24A (Tc) 18V 137mOhm @ 7.6A, 18V 5.6V @ 3.81mA 51 nC @ 18 V +22V, -4V 574 pF @ 800 V - 134W 175°C (TJ) Through Hole
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