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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK040N65Z,S1F

TK040N65Z,S1F

MOSFET N-CH 650V 57A TO247

Toshiba Semiconductor and Storage

133 10.73
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TK040N65Z,S1F

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Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 57A (Ta) 10V 40mOhm @ 28.5A, 10V 4V @ 2.85mA 105 nC @ 10 V ±30V 6250 pF @ 300 V - 360W (Tc) 150°C Through Hole
IXFH50N60P3

IXFH50N60P3

MOSFET N-CH 600V 50A TO247AD

IXYS

1587 10.78
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IXFH50N60P3

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Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 145mOhm @ 500mA, 10V 5V @ 4mA 94 nC @ 10 V ±30V 6300 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT18M100S

APT18M100S

MOSFET N-CH 1000V 18A D3PAK

Microchip Technology

183 10.97
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APT18M100S

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Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 18A (Tc) 10V 700mOhm @ 9A, 10V 5V @ 1mA 150 nC @ 10 V ±30V 4845 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT1204R7BFLLG

APT1204R7BFLLG

MOSFET N-CH 1200V 3.5A TO247

Microchip Technology

106 11.08
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APT1204R7BFLLG

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Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 3.5A (Tc) 10V 4.7Ohm @ 1.75A, 10V 5V @ 1mA 31 nC @ 10 V ±30V 715 pF @ 25 V - 135W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMZ120R350M1HXKSA1

IMZ120R350M1HXKSA1

SICFET N-CH 1.2KV 4.7A TO247-4

Infineon Technologies

234 11.18
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IMZ120R350M1HXKSA1

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Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 4.7A (Tc) 15V, 18V 350mOhm @ 2A, 18V 5.7V @ 1mA 5.3 nC @ 18 V +23V, -7V 182 pF @ 800 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTQ69N30P

IXTQ69N30P

MOSFET N-CH 300V 69A TO3P

IXYS

260 11.22
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IXTQ69N30P

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Tube Polar Active N-Channel MOSFET (Metal Oxide) 300 V 69A (Tc) 10V 49mOhm @ 500mA, 10V 5V @ 250µA 180 nC @ 10 V ±20V 4960 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
TPH3206PD

TPH3206PD

GANFET N-CH 600V 17A TO220AB

Transphorm

130 11.26
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TPH3206PD

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Tube - Not For New Designs N-Channel GaNFET (Gallium Nitride) 600 V 17A (Tc) 10V 180mOhm @ 11A, 8V 2.6V @ 500µA 9.3 nC @ 4.5 V ±18V 760 pF @ 480 V - 96W (Tc) -55°C ~ 175°C (TJ) Through Hole
R6030JNZ4C13

R6030JNZ4C13

MOSFET N-CH 600V 30A TO247G

Rohm Semiconductor

568 11.49
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R6030JNZ4C13

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 15V 143mOhm @ 15A, 15V 7V @ 5.5mA 74 nC @ 15 V ±30V 2500 pF @ 100 V - 370W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP410N30NAKSA1

IPP410N30NAKSA1

MOSFET N-CH 300V 44A TO220-3

Infineon Technologies

292 11.53
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IPP410N30NAKSA1

Datenblatt

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 300 V 44A (Tc) 10V 41mOhm @ 44A, 10V 4V @ 270µA 87 nC @ 10 V ±20V 7180 pF @ 100 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHG039N60E-GE3

SIHG039N60E-GE3

MOSFET N-CH 600V 63A TO247AC

Vishay Siliconix

406 11.67
- +

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SIHG039N60E-GE3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 63A (Tc) 10V 39mOhm @ 32A, 10V 5V @ 250µA 126 nC @ 10 V ±30V 4369 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT440N04T4HV

IXTT440N04T4HV

MOSFET N-CH 40V 440A TO268

IXYS

120 11.80
- +

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IXTT440N04T4HV

Datenblatt

Tube Trench Active N-Channel MOSFET (Metal Oxide) 40 V 440A (Tc) 10V 1.25mOhm @ 100A, 10V 4V @ 250µA 480 nC @ 10 V ±15V 26000 pF @ 25 V - 940W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCH47N60NF

FCH47N60NF

MOSFET N-CH 600V 45.8A TO247-3

onsemi

3374 11.83
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FCH47N60NF

Datenblatt

Tube SupreMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 45.8A (Tc) 10V 65mOhm @ 23.5A, 10V 4V @ 250µA 157 nC @ 10 V ±30V 6120 pF @ 100 V - 368W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP65R115CFD7AAKSA1

IPP65R115CFD7AAKSA1

MOSFET N-CH 650V 21A TO220-3

Infineon Technologies

432 7.57
- +

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IPP65R115CFD7AAKSA1

Datenblatt

Tube Automotive, AEC-Q101, CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 115mOhm @ 9.7A, 10V 4.5V @ 490µA 41 nC @ 10 V ±20V 1950 pF @ 400 V - 114W (Tc) -40°C ~ 150°C (TJ) Through Hole
TK49N65W,S1F

TK49N65W,S1F

PB-F POWER MOSFET TRANSISTOR TO2

Toshiba Semiconductor and Storage

113 11.99
- +

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TK49N65W,S1F

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 49.2A (Ta) 10V 55mOhm @ 24.6A, 10V 3.5V @ 2.5mA 160 nC @ 10 V ±30V 6500 pF @ 300 V - 400W (Tc) 150°C Through Hole
NVHL040N65S3F

NVHL040N65S3F

MOSFET N-CH 650V 65A TO247-3

onsemi

2529 12.03
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NVHL040N65S3F

Datenblatt

Tube Automotive, AEC-Q101, SuperFET® III, FRFET® Active N-Channel MOSFET (Metal Oxide) 650 V 65A (Tc) 10V 40mOhm @ 32.5A, 10V 5V @ 2.1mA 153 nC @ 10 V ±30V 5875 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCA47N60-F109

FCA47N60-F109

MOSFET N-CH 600V 47A TO3PN

onsemi

1782 10.12
- +

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FCA47N60-F109

Datenblatt

Tube,Tube SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 70mOhm @ 23.5A, 10V 5V @ 250µA 270 nC @ 10 V ±30V 8000 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R090CFD7XKSA1

IPW60R090CFD7XKSA1

MOSFET N-CH 600V 25A TO247-3

Infineon Technologies

119 7.90
- +

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IPW60R090CFD7XKSA1

Datenblatt

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 90mOhm @ 11.4A, 10V 4.5V @ 570µA 51 nC @ 10 V ±20V 2103 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW57N65M5

STW57N65M5

MOSFET N-CH 650V 42A TO247

STMicroelectronics

511 13.08
- +

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STW57N65M5

Datenblatt

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 42A (Tc) 10V 63mOhm @ 21A, 10V 5V @ 250µA 98 nC @ 10 V ±25V 4200 pF @ 100 V - 250W (Tc) 150°C (TJ) Through Hole
NVHL160N120SC1

NVHL160N120SC1

SICFET N-CH 1200V 17A TO247-3

onsemi

2849 13.37
- +

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NVHL160N120SC1

Datenblatt

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) 20V 224mOhm @ 12A, 20V 4.3V @ 2.5mA 34 nC @ 20 V +25V, -15V 665 pF @ 800 V - 119W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH100N30X3

IXFH100N30X3

MOSFET N-CH 300V 100A TO247

IXYS

118 13.44
- +

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Немедленный

IXFH100N30X3

Datenblatt

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 100A (Tc) 10V 13.5mOhm @ 50A, 10V 4.5V @ 4mA 122 nC @ 10 V ±20V 7660 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) Through Hole
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