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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDA032N08

FDA032N08

MOSFET N-CH 75V 120A TO3PN

onsemi

337 4.70
- +

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FDA032N08

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Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 3.2mOhm @ 75A, 10V 4.5V @ 250µA 220 nC @ 10 V ±20V 15160 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHG21N80AE-GE3

SIHG21N80AE-GE3

MOSFET N-CH 800V 17.4A TO247AC

Vishay Siliconix

2025 5.01
- +

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SIHG21N80AE-GE3

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Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 17.4A (Tc) 10V 235mOhm @ 11A, 10V 4V @ 250µA 72 nC @ 10 V ±30V 1388 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG125N60EF-GE3

SIHG125N60EF-GE3

MOSFET N-CH 600V 25A TO247AC

Vishay Siliconix

545 5.14
- +

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Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 125mOhm @ 12A, 10V 5V @ 250µA 47 nC @ 10 V ±30V 1533 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
BTS244ZE3043AKSA2

BTS244ZE3043AKSA2

MOSFET N-CH 55V 35A TO220-5-12

Infineon Technologies

284 5.34
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BTS244ZE3043AKSA2

Datenblatt

Tube TEMPFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) 4.5V, 10V 13mOhm @ 19A, 10V 2V @ 130µA 130 nC @ 10 V ±20V 2660 pF @ 25 V Temperature Sensing Diode 170W (Tc) -40°C ~ 175°C (TJ) Through Hole
SIHF12N50C-E3

SIHF12N50C-E3

MOSFET N-CH 500V 12A TO220

Vishay Siliconix

997 5.51
- +

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SIHF12N50C-E3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 555mOhm @ 4A, 10V 5V @ 250µA 48 nC @ 10 V ±30V 1375 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQAF13N80

FQAF13N80

MOSFET N-CH 800V 8A TO3PF

onsemi

360 5.52
- +

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FQAF13N80

Datenblatt

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 750mOhm @ 4A, 10V 5V @ 250µA 88 nC @ 10 V ±30V 3500 pF @ 25 V - 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCA20N60F

FCA20N60F

MOSFET N-CH 600V 20A TO3PN

onsemi

282 5.56
- +

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FCA20N60F

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Tube SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 3080 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF33N60DM6

STF33N60DM6

MOSFET N-CH 600V 25A TO220FP

STMicroelectronics

730 5.58
- +

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STF33N60DM6

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Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 128mOhm @ 12.5A, 10V 4.75V @ 250µA 35 nC @ 10 V ±25V 1500 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTHL110N65S3F

NTHL110N65S3F

MOSFET N-CH 650V 30A TO247-3

onsemi

279 5.63
- +

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NTHL110N65S3F

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 110mOhm @ 15A, 10V 5V @ 3mA 58 nC @ 10 V ±30V 2560 pF @ 400 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPT60R145CFD7XTMA1

IPT60R145CFD7XTMA1

MOSFET N-CH 600V 19A 8HSOF

Infineon Technologies

2000 5.77
- +

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IPT60R145CFD7XTMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 145mOhm @ 6A, 10V 4.5V @ 300µA 28 nC @ 10 V ±20V 1199 pF @ 400 V - 116W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MSJPF20N65-BP

MSJPF20N65-BP

MOSFET N-CH 650V 11A TO220F

Micro Commercial Co

5000 5.82
- +

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MSJPF20N65-BP

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 380mOhm @ 5.5A, 10V 4V @ 250µA 21 nC @ 10 V ±30V 901 pF @ 50 V - 31.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP16N50C-E3

SIHP16N50C-E3

MOSFET N-CH 500V 16A TO220AB

Vishay Siliconix

963 6.12
- +

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SIHP16N50C-E3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 380mOhm @ 8A, 10V 5V @ 250µA 68 nC @ 10 V ±30V 1900 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6020JNXC7G

R6020JNXC7G

MOSFET N-CH 600V 20A TO220FM

Rohm Semiconductor

1955 6.17
- +

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R6020JNXC7G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 15V 234mOhm @ 10A, 15V 7V @ 3.5mA 45 nC @ 15 V ±30V 1500 pF @ 100 V - 76W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTP110N65S3HF

NTP110N65S3HF

MOSFET N-CH 650V 30A TO220-3

onsemi

731 6.26
- +

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NTP110N65S3HF

Datenblatt

Bulk FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 110mOhm @ 15A, 10V 5V @ 740µA 62 nC @ 10 V ±30V 2635 pF @ 400 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRF3305

AUIRF3305

MOSFET N-CH 55V 140A TO220

Infineon Technologies

973 6.54
- +

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AUIRF3305

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 140A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 3650 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHP35N60EF-GE3

SIHP35N60EF-GE3

MOSFET N-CH 600V 32A TO220AB

Vishay Siliconix

890 6.59
- +

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Немедленный

SIHP35N60EF-GE3

Datenblatt

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 97mOhm @ 17A, 10V 4V @ 250µA 134 nC @ 10 V ±30V 2568 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R105CFD7XKSA1

IPP60R105CFD7XKSA1

MOSFET N CH

Infineon Technologies

226 6.63
- +

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IPP60R105CFD7XKSA1

Datenblatt

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 105mOhm @ 9.3A, 10V 4.5V @ 470µA 42 nC @ 10 V ±20V 1752 pF @ 400 V - 106W (Tc) -55°C ~ 150°C (TJ) Through Hole
C3M0350120J

C3M0350120J

SICFET N-CH 1200V 7.2A TO263-7

Wolfspeed, Inc.

8669 6.66
- +

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C3M0350120J

Datenblatt

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 7.2A (Tc) 15V 455mOhm @ 3.6A, 15V 3.6V @ 1mA 13 nC @ 15 V +15V, -4V 345 pF @ 1000 V - 40.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVHL110N65S3F

NVHL110N65S3F

MOSFET N-CH 650V 30A TO247-3

onsemi

145 6.84
- +

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NVHL110N65S3F

Datenblatt

Tube Automotive, AEC-Q101, SuperFET® III, FRFET® Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 110mOhm @ 15A, 10V 5V @ 3mA 58 nC @ 10 V ±30V 2560 pF @ 400 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R080P7XKSA1

IPA60R080P7XKSA1

MOSFET N-CH 600V 37A TO220

Infineon Technologies

493 6.85
- +

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Немедленный

IPA60R080P7XKSA1

Datenblatt

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 37A (Tc) 10V 80mOhm @ 11.8A, 10V 4V @ 590µA 51 nC @ 10 V ±20V 2180 pF @ 400 V - 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
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