Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FDA032N08MOSFET N-CH 75V 120A TO3PN |
337 | 4.70 |
ДобавитьНемедленный |
Datenblatt |
Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 3.2mOhm @ 75A, 10V | 4.5V @ 250µA | 220 nC @ 10 V | ±20V | 15160 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
SIHG21N80AE-GE3MOSFET N-CH 800V 17.4A TO247AC |
2025 | 5.01 |
ДобавитьНемедленный |
Datenblatt |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17.4A (Tc) | 10V | 235mOhm @ 11A, 10V | 4V @ 250µA | 72 nC @ 10 V | ±30V | 1388 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
SIHG125N60EF-GE3MOSFET N-CH 600V 25A TO247AC |
545 | 5.14 |
ДобавитьНемедленный |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 125mOhm @ 12A, 10V | 5V @ 250µA | 47 nC @ 10 V | ±30V | 1533 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ||
BTS244ZE3043AKSA2MOSFET N-CH 55V 35A TO220-5-12 |
284 | 5.34 |
ДобавитьНемедленный |
Datenblatt |
Tube | TEMPFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 55 V | 35A (Tc) | 4.5V, 10V | 13mOhm @ 19A, 10V | 2V @ 130µA | 130 nC @ 10 V | ±20V | 2660 pF @ 25 V | Temperature Sensing Diode | 170W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | |
SIHF12N50C-E3MOSFET N-CH 500V 12A TO220 |
997 | 5.51 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 12A (Tc) | 10V | 555mOhm @ 4A, 10V | 5V @ 250µA | 48 nC @ 10 V | ±30V | 1375 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
FQAF13N80MOSFET N-CH 800V 8A TO3PF |
360 | 5.52 |
ДобавитьНемедленный |
Datenblatt |
Tube | QFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 750mOhm @ 4A, 10V | 5V @ 250µA | 88 nC @ 10 V | ±30V | 3500 pF @ 25 V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
FCA20N60FMOSFET N-CH 600V 20A TO3PN |
282 | 5.56 |
ДобавитьНемедленный |
Datenblatt |
Tube | SuperFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±30V | 3080 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
STF33N60DM6MOSFET N-CH 600V 25A TO220FP |
730 | 5.58 |
ДобавитьНемедленный |
Datenblatt |
Tube | MDmesh™ M6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 128mOhm @ 12.5A, 10V | 4.75V @ 250µA | 35 nC @ 10 V | ±25V | 1500 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
NTHL110N65S3FMOSFET N-CH 650V 30A TO247-3 |
279 | 5.63 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 110mOhm @ 15A, 10V | 5V @ 3mA | 58 nC @ 10 V | ±30V | 2560 pF @ 400 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IPT60R145CFD7XTMA1MOSFET N-CH 600V 19A 8HSOF |
2000 | 5.77 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 145mOhm @ 6A, 10V | 4.5V @ 300µA | 28 nC @ 10 V | ±20V | 1199 pF @ 400 V | - | 116W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
MSJPF20N65-BPMOSFET N-CH 650V 11A TO220F |
5000 | 5.82 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 4V @ 250µA | 21 nC @ 10 V | ±30V | 901 pF @ 50 V | - | 31.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
SIHP16N50C-E3MOSFET N-CH 500V 16A TO220AB |
963 | 6.12 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 380mOhm @ 8A, 10V | 5V @ 250µA | 68 nC @ 10 V | ±30V | 1900 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
R6020JNXC7GMOSFET N-CH 600V 20A TO220FM |
1955 | 6.17 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 15V | 234mOhm @ 10A, 15V | 7V @ 3.5mA | 45 nC @ 15 V | ±30V | 1500 pF @ 100 V | - | 76W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
NTP110N65S3HFMOSFET N-CH 650V 30A TO220-3 |
731 | 6.26 |
ДобавитьНемедленный |
Datenblatt |
Bulk | FRFET®, SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 110mOhm @ 15A, 10V | 5V @ 740µA | 62 nC @ 10 V | ±30V | 2635 pF @ 400 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
AUIRF3305MOSFET N-CH 55V 140A TO220 |
973 | 6.54 |
ДобавитьНемедленный |
Datenblatt |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 140A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 3650 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
SIHP35N60EF-GE3MOSFET N-CH 600V 32A TO220AB |
890 | 6.59 |
ДобавитьНемедленный |
Datenblatt |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 32A (Tc) | 10V | 97mOhm @ 17A, 10V | 4V @ 250µA | 134 nC @ 10 V | ±30V | 2568 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IPP60R105CFD7XKSA1MOSFET N CH |
226 | 6.63 |
ДобавитьНемедленный |
Datenblatt |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 105mOhm @ 9.3A, 10V | 4.5V @ 470µA | 42 nC @ 10 V | ±20V | 1752 pF @ 400 V | - | 106W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
C3M0350120JSICFET N-CH 1200V 7.2A TO263-7 |
8669 | 6.66 |
ДобавитьНемедленный |
Datenblatt |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 7.2A (Tc) | 15V | 455mOhm @ 3.6A, 15V | 3.6V @ 1mA | 13 nC @ 15 V | +15V, -4V | 345 pF @ 1000 V | - | 40.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
NVHL110N65S3FMOSFET N-CH 650V 30A TO247-3 |
145 | 6.84 |
ДобавитьНемедленный |
Datenblatt |
Tube | Automotive, AEC-Q101, SuperFET® III, FRFET® | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 110mOhm @ 15A, 10V | 5V @ 3mA | 58 nC @ 10 V | ±30V | 2560 pF @ 400 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IPA60R080P7XKSA1MOSFET N-CH 600V 37A TO220 |
493 | 6.85 |
ДобавитьНемедленный |
Datenblatt |
Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 37A (Tc) | 10V | 80mOhm @ 11.8A, 10V | 4V @ 590µA | 51 nC @ 10 V | ±20V | 2180 pF @ 400 V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |