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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTQ22N60P

IXTQ22N60P

MOSFET N-CH 600V 22A TO3P

IXYS

194 7.14
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IXTQ22N60P

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Tube Polar Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 350mOhm @ 11A, 10V 5.5V @ 250µA 62 nC @ 10 V ±30V 3600 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM70N380CH C5G

TSM70N380CH C5G

MOSFET N-CH 700V 11A TO251

Taiwan Semiconductor Corporation

2754 7.16
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TSM70N380CH C5G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 11A (Tc) 10V 380mOhm @ 3.3A, 10V 4V @ 250µA 18.8 nC @ 10 V ±30V 981 pF @ 100 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6025JNXC7G

R6025JNXC7G

MOSFET N-CH 600V 25A TO220FM

Rohm Semiconductor

1975 7.27
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R6025JNXC7G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 15V 182mOhm @ 12.5A, 15V 7V @ 4.5mA 57 nC @ 15 V ±30V 1900 pF @ 100 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP5N100PM

IXFP5N100PM

MOSFET N-CH 1000V 2.3A TO220

IXYS

285 7.41
- +

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IXFP5N100PM

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 2.3A (Tc) 10V 2.8Ohm @ 2.5A, 10V 6V @ 250µA 33.4 nC @ 10 V ±30V 1830 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP450LCPBF

IRFP450LCPBF

MOSFET N-CH 500V 14A TO247-3

Vishay Siliconix

484 7.42
- +

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IRFP450LCPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 400mOhm @ 8.4A, 10V 4V @ 250µA 74 nC @ 10 V ±30V 2200 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH14N80P

IXFH14N80P

MOSFET N-CH 800V 14A TO247AD

IXYS

493 7.83
- +

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IXFH14N80P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 14A (Tc) 10V 720mOhm @ 500mA, 10V 5.5V @ 4mA 61 nC @ 10 V ±30V 3900 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM60NB190CZ C0G

TSM60NB190CZ C0G

MOSFET N-CHANNEL 600V 18A TO220

Taiwan Semiconductor Corporation

3921 7.84
- +

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TSM60NB190CZ C0G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 6A, 10V 4V @ 250µA 31 nC @ 10 V ±30V 1273 pF @ 100 V - 33.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6030JNXC7G

R6030JNXC7G

MOSFET N-CH 600V 30A TO220FM

Rohm Semiconductor

1617 7.88
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Немедленный

R6030JNXC7G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 15V 143mOhm @ 15A, 15V 7V @ 5.5mA 74 nC @ 15 V ±30V 2500 pF @ 100 V - 95W (Tc) 150°C (TJ) Through Hole
FCA22N60N

FCA22N60N

MOSFET N-CH 600V 22A TO3PN

onsemi

426 8.05
- +

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FCA22N60N

Datenblatt

Tube SupreMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 165mOhm @ 11A, 10V 4V @ 250µA 45 nC @ 10 V ±30V 1950 pF @ 100 V - 205W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6020KNZ4C13

R6020KNZ4C13

MOSFET N-CH 600V 20A TO247

Rohm Semiconductor

547 8.30
- +

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R6020KNZ4C13

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 9.5A, 10V 5V @ 1mA 40 nC @ 10 V ±20V 1550 pF @ 25 V - 231W (Tc) 150°C (TJ) Through Hole
R6020JNZ4C13

R6020JNZ4C13

MOSFET N-CH 600V 20A TO247G

Rohm Semiconductor

412 8.85
- +

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Немедленный

R6020JNZ4C13

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 15V 234mOhm @ 10A, 15V 7V @ 3.5mA 45 nC @ 15 V ±30V 1500 pF @ 100 V - 252W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6520KNZ4C13

R6520KNZ4C13

MOSFET N-CH 650V 20A TO247

Rohm Semiconductor

419 8.96
- +

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Немедленный

R6520KNZ4C13

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 205mOhm @ 9.5A, 10V 5V @ 630µA 40 nC @ 10 V ±20V 1550 pF @ 25 V - 231W (Tc) 150°C (TJ) Through Hole
R6025JNZ4C13

R6025JNZ4C13

MOSFET N-CH 600V 25A TO247G

Rohm Semiconductor

597 9.96
- +

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Немедленный

R6025JNZ4C13

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 15V 182mOhm @ 12.5A, 15V 7V @ 4.5mA 57 nC @ 15 V ±30V 1900 pF @ 100 V - 306W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCT3105KW7TL

SCT3105KW7TL

SICFET N-CH 1200V 23A TO263-7

Rohm Semiconductor

1959 16.38
- +

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SCT3105KW7TL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 1200 V 23A (Tc) - 137mOhm @ 7.6A, 18V 5.6V @ 3.81mA 51 nC @ 18 V +22V, -4V 574 pF @ 800 V - 125W 175°C (TJ) Surface Mount
IPW60R170CFD7XKSA1

IPW60R170CFD7XKSA1

MOSFET N-CH 650V 14A TO247-3

Infineon Technologies

240 5.62
- +

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Немедленный

IPW60R170CFD7XKSA1

Datenblatt

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) 10V 170mOhm @ 6A, 10V 4.5V @ 300µA 28 nC @ 10 V ±20V 1199 pF @ 400 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG73N60AE-GE3

SIHG73N60AE-GE3

MOSFET N-CH 600V 60A TO247AC

Vishay Siliconix

216 12.03
- +

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Немедленный

SIHG73N60AE-GE3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 40mOhm @ 36.5A, 10V 4V @ 250µA 394 nC @ 10 V ±30V 5500 pF @ 100 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCT3060AW7TL

SCT3060AW7TL

SICFET N-CH 650V 38A TO263-7

Rohm Semiconductor

1481 19.87
- +

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Немедленный

SCT3060AW7TL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 650 V 38A (Tc) - 78mOhm @ 13A, 18V 5.6V @ 6.67mA 58 nC @ 18 V +22V, -4V 852 pF @ 500 V - 159W 175°C (TJ) Surface Mount
R6042JNZ4C13

R6042JNZ4C13

MOSFET N-CH 600V 42A TO247G

Rohm Semiconductor

175 12.98
- +

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Немедленный

R6042JNZ4C13

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 42A (Tc) 15V 104mOhm @ 21A, 15V 7V @ 5.5mA 100 nC @ 15 V ±30V 3500 pF @ 100 V - 495W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCH041N60F-F085

FCH041N60F-F085

MOSFET N-CH 600V 76A TO247-3

onsemi

444 15.01
- +

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Немедленный

FCH041N60F-F085

Datenblatt

Tube Automotive, AEC-Q101, SuperFET® II Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 76A (Tc) 10V 41mOhm @ 38A, 10V 5V @ 250µA 347 nC @ 10 V ±20V 10900 pF @ 25 V - 595W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA65R045C7XKSA1

IPA65R045C7XKSA1

MOSFET N-CH 650V 18A TO220-FP

Infineon Technologies

389 16.78
- +

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Немедленный

IPA65R045C7XKSA1

Datenblatt

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 45mOhm @ 24.9A, 10V 4V @ 1.25mA 93 nC @ 10 V ±20V 4340 pF @ 400 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
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