Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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242NQ030R-1240A, 30V, PRM1-1, POWER MODULES |
2886 | 41.43 |
ДобавитьНемедленный |
Box | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis Mount | 11500pF @ 5V, 1MHz | - | 20 mA @ 30 V | 30 V | 240A | -55°C ~ 150°C | 510 mV @ 240 A | ||||
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DSS20-0015BDIODE SCHOTTKY 15V 20A TO220AC |
276 | 1.85 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 10 mA @ 15 V | 15 V | 20A | -55°C ~ 150°C | 450 mV @ 20 A | |||
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MSQ1PGHM3/H1A, 400V, MICROSMP, ESD PROTECTI |
4400 | 1.60 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 650 ns | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.2 V @ 1 A | ||
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HS3KB R5GDIODE GEN PURP 800V 3A DO214AA |
302 | 0.76 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |||
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GP3D020A065BSIC SCHOTTKY DIODE 650V TO247-2 |
350 | 6.70 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 835pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 20A | -55°C ~ 175°C | 1.7 V @ 20 A | ||
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VS-E5TH3006-M330A, 600V, "H" SERIES FRED PT IN |
182 | 1.66 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 46 ns | 20 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 1.6 V @ 30 A | ||
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240NQ045R-1240A, 45V, PRM1-1, POWER MODULES |
3712 | 41.43 |
ДобавитьНемедленный |
Box | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis Mount | 8000pF @ 5V, 1MHz | - | 20 mA @ 45 V | 45 V | 240A | -55°C ~ 150°C | 610 mV @ 240 A | ||||
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STTH506DDIODE GEN PURP 600V 5A TO220AC |
521 | 1.87 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 600 V | 600 V | 5A | 175°C (Max) | 1.85 V @ 5 A | |||
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SBRB1045T4GDIODE SCHOTTKY 45V 10A D2PAK |
1345 | 1.62 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 45 V | 45 V | 10A | -65°C ~ 175°C | 840 mV @ 20 A | ||
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ES3JBHR5GDIODE GEN PURP 600V 3A DO214AA |
104 | 0.76 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 34pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.45 V @ 3 A | ||
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FFSM2065BSILICON CARBIDE DIODE 650V 20A P |
2213 | 6.71 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 866pF @ 1V, 100kHz | 0 ns | 40 µA @ 650 V | 650 V | 23.4A (DC) | -55°C ~ 175°C | 1.7 V @ 20 A | |||
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HERAF808G C0GDIODE GEN PURP 1KV 8A ITO220AC |
307 | 1.68 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 80 ns | 10 µA @ 1000 V | 1000 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A | |||
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241NQ045R-1240A, 45V, PRM1-1, POWER MODULES |
3679 | 41.43 |
ДобавитьНемедленный |
Box | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis Mount | 8600pF @ 5V, 1MHz | - | 20 mA @ 45 V | 45 V | 240A | -55°C ~ 175°C | 690 mV @ 240 A | ||||
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STTH30AC06FPDIODE GEN PURP 600V 30A TO220 |
730 | 1.88 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | ECOPACK® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 20 µA @ 600 V | 600 V | 30A | 175°C (Max) | 1.95 V @ 30 A | ||
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RB078BM30SFHTLRB078BM30SFH IS LOW SUB AND HIGH |
2495 | 1.63 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 5 µA @ 30 V | 30 V | 5A | 150°C (Max) | 720 mV @ 5 A | ||
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SDUR860DIODE GEN PURP 600V TO220AC |
985 | 0.77 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 600 V | 600 V | - | -55°C ~ 150°C | 1.7 V @ 8 A | |||
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CDBDSC51200-GDIODE SIC 5A 1200V TO-252/DPAK |
475 | 6.87 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 475pF @ 0V, 1MHz | 0 ns | 100 µA @ 1200 V | 1200 V | 18A (DC) | -55°C ~ 175°C | 1.7 V @ 5 A | |||
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S3D03065FDIODE SCHOTTKY SILICON CARBIDE S |
300 | 1.70 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 179pF @ 0V, 1MHz | 0 ns | 5 µA @ 650 V | 650 V | 3A | -55°C ~ 175°C | 1.7 V @ 3 A | |||
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180NQ045R-1180A, 45V, PRM1-1, POWER MODULES |
3615 | 41.99 |
ДобавитьНемедленный |
Box | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis Mount | 5800pF @ 5V, 1MHz | - | 15 mA @ 45 V | 45 V | 180A | -55°C ~ 150°C | 600 mV @ 180 A | ||||
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SCS304AHGC9SHORTER RECOVERY TIME, ENABLING |
786 | 1.90 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 200pF @ 1V, 1MHz | 0 ns | 20 µA @ 650 V | 650 V | 4A (DC) | 175°C (Max) | 1.5 V @ 4 A |