Diodes-Rectifiers-Single - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
NTE6162 R-1400PRV 150A CATH CASE NTE Electronics, Inc	3738	61.88	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	5 mA @ 1400 V	1400 V	150A	-65°C ~ 190°C	1.1 V @ 200 A
RF1501NS3STL DIODE GEN PURP 300V 20A LPDS Rohm Semiconductor	1065	1.74	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	30 ns	10 µA @ 300 V	300 V	20A	150°C (Max)	1.5 V @ 20 A
V12PM15-M3/H DIODE SCHOTTKY TMBS 12A 150V SMP Vishay General Semiconductor - Diodes Division	291	0.78	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	eSMP®, TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	860pF @ 4V, 1MHz	-	250 µA @ 150 V	150 V	12A	-40°C ~ 175°C	1.08 V @ 12 A
LSIC2SD065D16A DIODE SCHOTTKY SIC 650V 16A Littelfuse Inc.	825	8.84	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101, GEN2	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	730pF @ 1V, 1MHz	0 ns	50 µA @ 650 V	650 V	38A (DC)	-55°C ~ 175°C	1.8 V @ 16 A
1N645 DIODE 4 AMP 225V DO35 Solid State Inc.	3289	1.89	- + Добавить Немедленный	Datenblatt	Box		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	-	200 nA @ 225 V	225 V	400mA	-65°C ~ 175°C	1 V @ 400 mA
NTE6163 R-1400PRV 150A ANODE CASE NTE Electronics, Inc	3928	61.88	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	5 mA @ 1400 V	1400 V	150A	-65°C ~ 190°C	1.1 V @ 200 A
FFPF15S60STU DIODE GEN PURP 600V 15A TO220F onsemi	680	1.75	- + Добавить Немедленный	Datenblatt	Tube	Stealth™	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Last Time Buy	Through Hole	-	35 ns	100 µA @ 600 V	600 V	15A	-65°C ~ 150°C	2.6 V @ 15 A
BYV27-150-TR DIODE AVALANCHE 165V 2A SOD57 Vishay General Semiconductor - Diodes Division	975	0.79	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	25 ns	1 µA @ 165 V	165 V	2A	-55°C ~ 175°C	1.07 V @ 3 A
WNSC101200Q SILICON CARBIDE POWER DIODE WeEn Semiconductors	2435	8.93	- + Добавить Немедленный	Datenblatt	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	510pF @ 1V, 1MHz	0 ns	110 µA @ 1200 V	1200 V	10A	175°C (Max)	1.6 V @ 10 A
UJ3D06504TS 650V 4A SIC SCHOTTKY DIODE G3, T UnitedSiC	993	2.27	- + Добавить Немедленный	Datenblatt	Tube	Gen-III	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	118pF @ 1V, 1MHz	0 ns	25 µA @ 650 V	650 V	4A (DC)	-55°C ~ 175°C	1.7 V @ 4 A
NTE6354 R-400 PRV 300 A CATH CASE NTE Electronics, Inc	3370	61.95	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	40 mA @ 400 V	400 V	300A	-40°C ~ 180°C	-
STPS1545DY DIODE SCHOTTKY 45V 15A TO220AC STMicroelectronics	1305	1.75	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	200 µA @ 45 V	45 V	15A	-40°C ~ 175°C	570 mV @ 15 A
FML-G22S DIODE GEN PURP 200V 10A TO220F Sanken	352	0.79	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	40 ns	200 µA @ 200 V	200 V	10A	-40°C ~ 150°C	980 mV @ 10 A
WNSC101200WQ SILICON CARBIDE POWER DIODE WeEn Semiconductors	1200	8.93	- + Добавить Немедленный	Datenblatt	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	510pF @ 1V, 1MHz	0 ns	110 µA @ 1200 V	1200 V	10A	175°C (Max)	1.6 V @ 10 A
GP3D006A065A DIODE SILICON CARBIDE SemiQ	476	1.98	- + Добавить Немедленный	Datenblatt	Tube	Amp+™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	229pF @ 1V, 1MHz	-	15 µA @ 650 V	650 V	20A (DC)	-55°C ~ 175°C	1.55 V @ 6 A
1N4004GP-TP DIODE GEN PURP 400V 1A DO41 Micro Commercial Co	108	0.29	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	2 µs	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1.1 V @ 1 A
SDUR15Q60WTB 600V FRD,15A,PACKAGE TO-247AC SMC Diode Solutions	3000	1.78	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	40 ns	20 µA @ 600 V	600 V	15A	-55°C ~ 150°C	2 V @ 15 A
CMR1U-01 TR13 PBFREE DIODE GEN PURP 100V 1A SMB Central Semiconductor Corp	315	0.79	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	10pF @ 4V, 1MHz	50 ns	5 µA @ 100 V	100 V	1A	-65°C ~ 175°C	1 V @ 1 A
VS-1N1183A DIODE GEN PURP 50V 40A DO203AB Vishay General Semiconductor - Diodes Division	294	8.93	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	2.5 mA @ 50 V	50 V	40A	-65°C ~ 200°C	1.3 V @ 126 A
S4D02120A DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	298	1.99	- + Добавить Немедленный		Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	116pF @ 0V, 1MHz	0 ns	10 µA @ 1200 V	1200 V	2A	-55°C ~ 175°C	1.8 V @ 2 A