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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SCS212AJHRTLL

SCS212AJHRTLL

DIODE SCHOTTKY 650V 12A TO263AB

Rohm Semiconductor

862 7.44
- +

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SCS212AJHRTLL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Not For New Designs Surface Mount 438pF @ 1V, 1MHz 0 ns 240 µA @ 600 V 650 V 12A (DC) 175°C (Max) 1.55 V @ 12 A
VS-E5TX1506THN3

VS-E5TX1506THN3

15A, 600V, "X" SERIES FRED PT IN

Vishay General Semiconductor - Diodes Division

1000 1.75
- +

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VS-E5TX1506THN3

Datenblatt

Tube Automotive, AEC-Q101, FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 33 ns 10 µA @ 600 V 600 V 15A -55°C ~ 175°C 2.1 V @ 15 A
NTE6156

NTE6156

R-600PRV 150A CATH CASE

NTE Electronics, Inc

3965 48.75
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NTE6156

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 12 mA @ 600 V 600 V 150A -40°C ~ 200°C 1.4 V @ 150 A
RHRP8120-F102

RHRP8120-F102

DIODE GEN PURP 1.2KV 8A TO220-2

onsemi

3189 1.98
- +

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RHRP8120-F102

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 70 ns 100 µA @ 1200 V 1200 V 8A -65°C ~ 175°C 3.2 V @ 8 A
STTH15RQ06G2-TR

STTH15RQ06G2-TR

600V ULTRAFAST RECTIFIERS

STMicroelectronics

1282 1.68
- +

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STTH15RQ06G2-TR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) ECOPACK®2 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 50 ns 20 µA @ 600 V 600 V 15A 175°C (Max) 2.95 V @ 15 A
PMEG060V100EPDZ

PMEG060V100EPDZ

DIODE SCHOTTKY 60V 10A CFP15

Nexperia USA Inc.

2991 0.78
- +

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PMEG060V100EPDZ

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 1050pF @ 1V, 1MHz 33 ns 700 µA @ 60 V 60 V 10A 175°C (Max) 560 mV @ 10 A
DUR60120W

DUR60120W

DIODE GEN PURP 1.2KV 60A TO247AC

Littelfuse Inc.

3812 7.63
- +

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DUR60120W

Datenblatt

Tube DUR RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 100 ns 650 µA @ 1200 V 1200 V 60A -55°C ~ 150°C 3.5 V @ 60 A
RFUH25TB3SNZC9

RFUH25TB3SNZC9

RFUH25TB3SNZ IS AN ULTRA LOW SWI

Rohm Semiconductor

937 1.77
- +

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RFUH25TB3SNZC9

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 10 µA @ 350 V 350 V 20A 150°C 1.45 V @ 20 A
NTE116-100

NTE116-100

NTE116(100/PKG)

NTE Electronics, Inc

2432 49.60
- +

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NTE116-100

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.1 V @ 1 A
DPG30I300PA

DPG30I300PA

DIODE GEN PURP 300V 30A TO220AC

IXYS

3498 2.08
- +

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DPG30I300PA

Datenblatt

Tube HiPerFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 1 µA @ 300 V 300 V 30A -55°C ~ 175°C 1.35 V @ 30 A
TSPB15U100S S1G

TSPB15U100S S1G

DIODE SCHOTTKY 100V 15A SMPC4.0

Taiwan Semiconductor Corporation

2197 1.71
- +

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TSPB15U100S S1G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 250 µA @ 100 V 100 V 15A -55°C ~ 150°C 700 mV @ 15 A
SK59C R7G

SK59C R7G

DIODE SCHOTTKY 90V 5A DO214AB

Taiwan Semiconductor Corporation

704 0.78
- +

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SK59C R7G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 300 µA @ 90 V 90 V 5A -55°C ~ 150°C 850 mV @ 5 A
GC15MPS12-247

GC15MPS12-247

SIC DIODE 1200V 15A TO-247-2

GeneSiC Semiconductor

253 7.95
- +

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GC15MPS12-247

Datenblatt

Tube SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1089pF @ 1V, 1MHz 0 ns 14 µA @ 1200 V 1200 V 75A (DC) -55°C ~ 175°C 1.8 V @ 15 A
KMSF71

KMSF71

DIODE SFR D12.77X6.6Z 200V 20A

Diotec Semiconductor

100 1.78
- +

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KMSF71

Datenblatt

Box RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis Mount - 200 ns 5 µA @ 100 V 100 V 35A -50°C ~ 175°C 1.1 V @ 20 A
NTE125-100

NTE125-100

NTE125(100/PKG)

NTE Electronics, Inc

3043 60.80
- +

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NTE125-100

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 600 V 1000 V 1A -65°C ~ 175°C 1.1 V @ 1 A
VS-30ETU12-M3

VS-30ETU12-M3

DIODE GEN PURP 30A TO220AC

Vishay General Semiconductor - Diodes Division

2865 2.11
- +

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VS-30ETU12-M3

Datenblatt

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 220 ns 145 µA @ 1200 V 1200 V 30A -55°C ~ 175°C 2.68 V @ 30 A
ACDBA1100-HF

ACDBA1100-HF

DIODE SCHOTTKY 100V 1A DO214AC

Comchip Technology

1930 1.71
- +

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ACDBA1100-HF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 30pF @ 4V, 1MHz - 200 µA @ 100 V 100 V 1A -55°C ~ 150°C 850 mV @ 1 A
CMPSH05-4 TR PBFREE

CMPSH05-4 TR PBFREE

DIODE SCHOTTKY 40V 500MA SOT23

Central Semiconductor Corp

603 0.78
- +

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CMPSH05-4 TR PBFREE

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 50pF @ 1V, 1MHz - 20 µA @ 10 V 40 V 500mA -65°C ~ 150°C 470 mV @ 500 mA
LSIC2SD065A16A

LSIC2SD065A16A

SIC SCHOTTKY DIOD 650V 16A TO220

Littelfuse Inc.

864 8.84
- +

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LSIC2SD065A16A

Datenblatt

Tube Gen2 RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 730pF @ 1V, 1MHz 0 ns 50 µA @ 650 V 650 V 38A (DC) -55°C ~ 175°C 1.8 V @ 16 A
MUR860 C0G

MUR860 C0G

DIODE GEN PURP 600V 8A TO220AC

Taiwan Semiconductor Corporation

230 1.79
- +

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MUR860 C0G

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 5 µA @ 600 V 600 V 8A -55°C ~ 175°C 1.7 V @ 8 A
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