Diodes-Rectifiers-Single - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
NTE6071 R-1600V 85A ANODE CASE NTE Electronics, Inc	3535	29.65	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	2 mA @ 1600 V	1600 V	85A	-65°C ~ 190°C	1.15 V @ 200 A
V30100S-M3/4W DIODE SCHOTTKY 30A 100V TO-220AB Vishay General Semiconductor - Diodes Division	992	1.73	- + Добавить Немедленный	Datenblatt	Tube	TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	350 µA @ 100 V	100 V	30A	-40°C ~ 150°C	1 V @ 30 A
HS5G V7G DIODE GEN PURP 400V 5A DO214AB Taiwan Semiconductor Corporation	1550	1.48	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	80pF @ 4V, 1MHz	50 ns	10 µA @ 400 V	400 V	5A	-55°C ~ 150°C	1.3 V @ 5 A
V10PM45HM3/H DIODE SCHOTTKY TMBS 10A 45V SMPC Vishay General Semiconductor - Diodes Division	239	0.74	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101, eSMP®, TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	1850pF @ 4V, 1MHz	-	300 µA @ 45 V	45 V	10A	-40°C ~ 175°C	600 mV @ 10 A
CDBJFSC10650-G DIODE, SIC STKY 10A 650V TO-220F Comchip Technology	494	6.10	- + Добавить Немедленный	Datenblatt	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	710pF @ 0V, 1MHz	0 ns	100 µA @ 650 V	650 V	10A (DC)	-55°C ~ 175°C	1.7 V @ 10 A
IDV15E65D2XKSA1 DIODE GEN PURP 650V 15A TO220-2 Infineon Technologies	490	1.30	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	47 ns	40 µA @ 650 V	650 V	15A	-40°C ~ 175°C	2.2 V @ 15 A
SM165KE800G2 DIODE RECTIFIER 800V 165A SINGLE SMC Diode Solutions	3837	32.81	- + Добавить Немедленный		Box		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis Mount	-	-	20 µA @ 800 V	800 V	165A	-40°C ~ 150°C	1.25 V @ 165 A
STTH2002DI DIODE GEN PURP 200V 20A TO220AC STMicroelectronics	520	1.73	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	40 ns	10 µA @ 200 V	200 V	20A	175°C (Max)	1.1 V @ 20 A
HS5K V7G DIODE GEN PURP 800V 5A DO214AB Taiwan Semiconductor Corporation	1428	1.48	- + Добавить Немедленный	Datenblatt	Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	50pF @ 4V, 1MHz	75 ns	10 µA @ 800 V	800 V	5A	-55°C ~ 150°C	1.7 V @ 5 A
SB560 DIODE SCHOTTKY 60V 5A DO201AD onsemi	2561	0.74	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Last Time Buy	Through Hole	380pF @ 4V, 1MHz	-	500 µA @ 60 V	60 V	5A	-55°C ~ 150°C	670 mV @ 5 A
LSIC2SD120A10 DIODE SCHOTTKY 1.2KV 28A TO220-2 Littelfuse Inc.	383	6.28	- + Добавить Немедленный	Datenblatt	Tube	Gen2	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Through Hole	582pF @ 1V, 1MHz	0 ns	100 µA @ 1200 V	1200 V	28A (DC)	-55°C ~ 175°C	1.8 V @ 10 A
1N60A D-GE 40PRV .005A NTE Electronics, Inc	695	1.31	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	-	-	65 µA @ 10 V	30 V	150mA (DC)	-65°C ~ 85°C	1 V @ 5 mA
PEF20470HV1.1 SWITI MTSI-L SWITCHING IC Rochester Electronics, LLC	2609	33.77	- + Добавить Немедленный		Bulk		RoHS	-	-	Active	-	-	-	-	-	-	-	-
MBR10100-E3/4W DIODE SCHOTTKY 100V 10A TO220AC Vishay General Semiconductor - Diodes Division	735	1.76	- + Добавить Немедленный	Datenblatt	Tube	TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 100 V	100 V	10A	-65°C ~ 150°C	800 mV @ 10 A
HS5J V7G DIODE GEN PURP 600V 5A DO214AB Taiwan Semiconductor Corporation	1363	1.48	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	50pF @ 4V, 1MHz	75 ns	10 µA @ 600 V	600 V	5A	-55°C ~ 150°C	1.7 V @ 5 A
TST10L60CW C0G DIODE SCHOTTKY 60V 5A TO220AB Taiwan Semiconductor Corporation	924	0.75	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Through Hole	-	-	200 µA @ 60 V	60 V	5A	-55°C ~ 150°C	650 mV @ 5 A
LSIC2SD065A10A SIC SCHOTTKY DIOD 650V 10A TO220 Littelfuse Inc.	1018	6.34	- + Добавить Немедленный	Datenblatt	Tube	Gen2	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	470pF @ 1V, 1MHz	0 ns	50 µA @ 650 V	650 V	27A (DC)	-55°C ~ 175°C	1.8 V @ 10 A
DSB10I45PM DIODE SCHOTTKY 45V 10A TO220FP IXYS	400	1.35	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	7 mA @ 45 V	45 V	10A	-55°C ~ 150°C	560 mV @ 10 A
NTE6047 R-1KV PRV 85A FAST REC AK NTE Electronics, Inc	2460	35.49	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	1 µs	100 µA @ 1000 V	1000 V	85A	-40°C ~ 125°C	1.75 V @ 267 A
SCS304AMC DIODES SILICON CARBIDE Rohm Semiconductor	573	1.76	- + Добавить Немедленный	Datenblatt	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	200pF @ 1V, 1MHz	0 ns	20 µA @ 650 V	650 V	4A (DC)	175°C (Max)	1.5 V @ 4 A