Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
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NTE5926R-1200V 60A DO5 KK |
3210 | 22.10 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 10 mA @ 1200 V | 1200 V | 60A | -65°C ~ 175°C | 1.4 V @ 60 A | |||
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VS-ETL1506FP-M3DIODE GEN PURP 600V 15A TO220FP |
980 | 1.58 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 210 ns | 15 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.07 V @ 15 A | ||
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MSQ1PG-M3/H1A, 400V, MICROSMP, ESD PROTECTI |
4385 | 1.45 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 650 ns | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.2 V @ 1 A | ||
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SDURB560TRDIODE GEN PURP 600V D2PAK |
710 | 0.72 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 5 µA @ 600 V | 600 V | - | -55°C ~ 150°C | 1.55 V @ 5 A | |||
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SCS212AJTLLDIODE SCHOTTKY 650V 12A TO263AB |
900 | 5.45 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | - | 0 ns | 240 µA @ 600 V | 650 V | 12A | 175°C (Max) | 1.55 V @ 12 A | |||
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FFPF2OU60DNTURECTIFIER, AVALANCHE, 1 PHASE, 2 |
700 | 1.09 |
ДобавитьНемедленный |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||||
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NTE6036R-600V 85A FAST REC KK |
2101 | 24.29 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 500 ns | 100 µA @ 600 V | 600 V | 85A | -40°C ~ 125°C | 1.75 V @ 267 A | |||
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RFN5TF8SFHC9ROHM'S FAST RECOVERY DIODES ARE |
887 | 1.60 |
ДобавитьНемедленный |
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Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 10 µA @ 800 V | 800 V | 5A | 150°C (Max) | 2.1 V @ 5 A | ||
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MSQ1PJ-M3/H1A, 600V, MICROSMP, ESD PROTECTI |
3896 | 1.45 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 650 ns | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.2 V @ 1 A | ||
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RFN2L4STE25DIODE SCHOTTKY 400V 1.5A PMDS |
156 | 0.72 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | 30 ns | 1 µA @ 400 V | 400 V | 1.5A | 150°C (Max) | 1.2 V @ 1.5 A | |||
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NXPSC10650QDIODE SCHOTTKY 650V 10A TO220AC |
1943 | 5.57 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 300pF @ 1V, 1MHz | 0 ns | 250 µA @ 650 V | 650 V | 10A | 175°C (Max) | 1.7 V @ 10 A | |||
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BYV415K-600PQ127ULTRAFAST RECTIFIER DIODE |
438 | 1.09 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |||
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NTE6037R-600V 85A FAST REC AK |
2941 | 24.33 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 500 ns | 100 µA @ 600 V | 600 V | 85A | -40°C ~ 125°C | 1.75 V @ 267 A | |||
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APT30DQ120BGDIODE GEN PURP 1.2KV 30A TO247 |
178 | 1.61 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 320 ns | 100 µA @ 1200 V | 1200 V | 30A | -55°C ~ 175°C | 3.3 V @ 30 A | |||
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TUAU6GH M3G6A, 400V, STANDARD RECOVERY RECT |
2845 | 1.45 |
ДобавитьНемедленный |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 64pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 6A (DC) | -55°C ~ 175°C | 1.3 V @ 6 A | ||||
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SB540DIODE SCHOTTKY 40V 5A DO201AD |
105 | 0.72 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Last Time Buy | Through Hole | 500pF @ 4V, 1MHz | - | 500 µA @ 40 V | 40 V | 5A | -55°C ~ 150°C | 550 mV @ 5 A | |||
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WNSC051200QSILICON CARBIDE POWER DIODE |
2980 | 5.61 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 250pF @ 1V, 1MHz | 0 ns | 50 µA @ 1200 V | 1200 V | 5A | 175°C (Max) | 1.6 V @ 5 A | |||
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NTE110AD-GE-GEN PURP 40 PRV |
384 | 1.09 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | - | 65 µA @ 10 V | 30 V | 150mA (DC) | -65°C ~ 85°C | 1 V @ 5 mA | |||
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NTE6070R-1600V 85A CATHODE CASE |
2647 | 25.87 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 2 mA @ 1600 V | 1600 V | 85A | -65°C ~ 190°C | 1.15 V @ 200 A | |||
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SD125SC200B.TDIODE SCHOTTKY 200V 15A DIE |
300 | 1.63 |
ДобавитьНемедленный |
![]() Datenblatt |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 300pF @ 5V, 1MHz | - | 350 µA @ 200 V | 200 V | 15A | -55°C ~ 200°C | 920 mV @ 15 A |