Diodes-Rectifiers-Single - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
CDBJSC10650-G DIODE SIC 10A 650V TO-220-2 Comchip Technology	472	5.00	- + Добавить Немедленный	Datenblatt	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	710pF @ 0V, 1MHz	0 ns	100 µA @ 650 V	650 V	10A (DC)	-55°C ~ 175°C	1.7 V @ 10 A
P2000KTL DIODE STD D8X7.5 800V 20A Diotec Semiconductor	1000	1.04	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 800 V	800 V	20A	-50°C ~ 175°C	1.1 V @ 20 A
NTE6009 R-400V 40A FAST REC AK NTE Electronics, Inc	2499	21.88	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	400 ns	50 µA @ 400 V	400 V	40A	-65°C ~ 160°C	1.4 V @ 40 A
RFUH10TF6SFHC9 ROHM'S FAST RECOVERY DIODES ARE Rohm Semiconductor	844	1.56	- + Добавить Немедленный	Datenblatt	Cut Tape (CT)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	25 ns	10 µA @ 600 V	600 V	10A	150°C (Max)	2.8 V @ 10 A
FSV2050V DIODE SCHOTTKY 50V 20A TO277-3 onsemi	4574	1.42	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	320 µA @ 50 V	50 V	20A	-55°C ~ 150°C	550 mV @ 20 A
SB5H90-E3/73 DIODE SCHOTTKY 90V 5A DO201AD Vishay General Semiconductor - Diodes Division	170	0.71	- + Добавить Немедленный	Datenblatt	Cut Tape (CT),Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	200 µA @ 90 V	90 V	5A	175°C (Max)	800 mV @ 5 A
LSIC2SD065A08A SIC SCHOTTKY DIODE 650V 8A TO220 Littelfuse Inc.	1031	5.13	- + Добавить Немедленный	Datenblatt	Tube	Gen2	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	415pF @ 1V, 1MHz	0 ns	50 µA @ 650 V	650 V	23A (DC)	-55°C ~ 175°C	1.8 V @ 8 A
BYP25A05 DIODE STD D13X10.7W 50V 25A Diotec Semiconductor	300	1.06	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	100 µA @ 50 V	50 V	25A	-50°C ~ 215°C	1.1 V @ 25 A
NTE6045 R-1KV PRV 60A ANODE CASE NTE Electronics, Inc	3905	22.10	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	10 mA @ 1000 V	1000 V	60A	-65°C ~ 175°C	1.4 V @ 60 A
APT15D60KG DIODE GEN PURP 600V 15A TO220 Microchip Technology	841	1.56	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	80 ns	250 µA @ 600 V	600 V	15A	-55°C ~ 175°C	1.8 V @ 15 A
RGP25M-E3/54 DIODE GEN PURP 1KV 2.5A DO201 Vishay General Semiconductor - Diodes Division	1058	1.42	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	SUPERECTIFIER®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	500 ns	5 µA @ 1000 V	1000 V	2.5A	-65°C ~ 175°C	1.3 V @ 2.5 A
TSP15H120S S1G DIODE SCHOTTKY 120V 15A TO277A Taiwan Semiconductor Corporation	140	0.71	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	250 µA @ 120 V	120 V	15A	-55°C ~ 150°C	750 mV @ 15 A
VS-HFA06TB120SPBF DIODE GEN PURP 1.2KV 6A D2PAK Vishay General Semiconductor - Diodes Division	3206	5.25	- + Добавить Немедленный	Datenblatt	Tube	HEXFRED®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	-	80 ns	5 µA @ 1200 V	1200 V	6A (DC)	-55°C ~ 150°C	3 V @ 6 A
BYP25K05 DIODE STD D13X10.7W 50V 25A Diotec Semiconductor	300	1.06	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	100 µA @ 50 V	50 V	25A	-50°C ~ 215°C	1.1 V @ 25 A
NTE6044 R-1KV PRV 60A CATH CASE NTE Electronics, Inc	3859	22.10	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	10 mA @ 1000 V	1000 V	60A	-65°C ~ 175°C	1.4 V @ 60 A
STPS30SM120SFP DIODE SCHOTTKY 120V TO220FPAB STMicroelectronics	152	1.57	- + Добавить Немедленный	Datenblatt	Tube	ECOPACK®2	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	275 µA @ 120 V	120 V	30A	150°C (Max)	950 mV @ 30 A
BYV28-150-TAP DIODE AVALANCHE 150V 3.5A SOD64 Vishay General Semiconductor - Diodes Division	2116	1.44	- + Добавить Немедленный	Datenblatt	Cut Tape (CT),Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	30 ns	1 µA @ 150 V	150 V	3.5A	-55°C ~ 175°C	1.1 V @ 5 A
RBR5L30BDDTE25 LOW VF TYPE AUTOMOTIVE SCHOTTKY Rohm Semiconductor	811	0.72	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	150 µA @ 30 V	30 V	5A	150°C	490 mV @ 5 A
FFSP1065A DIODE SCHOTTKY 650V 15A TO220-2 onsemi	540	5.38	- + Добавить Немедленный	Datenblatt	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	575pF @ 1V, 100kHz	0 ns	200 µA @ 650 V	650 V	15A (DC)	-55°C ~ 175°C	1.75 V @ 10 A
NTE636 R-SI 600V 2A ULTRA FAST NTE Electronics, Inc	492	1.06	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	65pF @ 0V, 1MHz	50 ns	5 µA @ 600 V	600 V	1.6A	-65°C ~ 175°C	1.25 V @ 2 A