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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
STTH3012W DIODE GEN PURP 1.2KV 30A DO247 STMicroelectronics	2250	3.85	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	115 ns	20 µA @ 1200 V	1200 V	30A	175°C (Max)	2.25 V @ 30 A
P1000J DIODE STD D8X7.5 600V 10A Diotec Semiconductor	1000	0.46	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 600 V	600 V	10A	-50°C ~ 175°C	1.05 V @ 10 A
DSEI30-06A DIODE GEN PURP 600V 37A TO247AD IXYS	2801	3.87	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	100 µA @ 600 V	600 V	37A	-40°C ~ 150°C	1.6 V @ 37 A
A214B RECTIFIER DIODE, 2A, 200V Rochester Electronics, LLC	901	0.47	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	45pF @ 4V, 1MHz	35 ns	2 µA @ 200 V	200 V	2A	-65°C ~ 175°C	950 mV @ 2 A
IDH08G65C6XKSA1 DIODE SCHOTTKY 650V 20A TO220-2 Infineon Technologies	3254	3.93	- + Добавить Немедленный	Datenblatt	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	401pF @ 1V, 1MHz	0 ns	27 µA @ 420 V	650 V	20A (DC)	-55°C ~ 175°C	1.35 V @ 8 A
RURD440S 4A, 400V ULTRAFAST DIODE Rochester Electronics, LLC	900	0.47	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	60 ns	-	400 V	4A	-65°C ~ 175°C	1.5 V @ 4 A
VS-90APS12L-M3 NEW INPUT DIODES - TO-247-E3 Vishay General Semiconductor - Diodes Division	3869	3.94	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 1200 V	1200 V	90A	-40°C ~ 150°C	1.2 V @ 90 A
P1000K DIODE STD D8X7.5 800V 10A Diotec Semiconductor	1000	0.47	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 800 V	800 V	10A	-50°C ~ 175°C	1.05 V @ 10 A
STPSC10H12GY-TR DIODE SCHOTTKY 1.2KV 10A D2PAK STMicroelectronics	3583	6.60	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101, ECOPACK®2	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	725pF @ 0V, 1MHz	0 ns	60 µA @ 1200 V	1200 V	10A	-40°C ~ 175°C	1.5 V @ 10 A
P1200D DIODE STD D8X7.5 200V 12A Diotec Semiconductor	1000	0.47	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	10 µA @ 200 V	200 V	12A	-50°C ~ 150°C	950 mV @ 12 A
1N3611 DIODE GEN PURP 200V 1A AXIAL Microchip Technology	3789	4.11	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	1 µA @ 200 V	200 V	1A	-65°C ~ 175°C	1.1 V @ 1 A
P1000M DIODE STD D8X7.5 1000V 10A Diotec Semiconductor	1000	0.48	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 1000 V	1000 V	10A	-50°C ~ 175°C	1.05 V @ 10 A
IDH05G120C5XKSA1 DIODE SCHOTTKY 1.2KV 5A TO220-2 Infineon Technologies	2308	4.16	- + Добавить Немедленный	Datenblatt	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	301pF @ 1V, 1MHz	0 ns	33 µA @ 1200 V	1200 V	5A (DC)	-55°C ~ 175°C	1.8 V @ 5 A
P1200G DIODE STD D8X7.5 400V 12A Diotec Semiconductor	1000	0.48	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	10 µA @ 400 V	400 V	12A	-50°C ~ 150°C	950 mV @ 12 A
DSI45-12A DIODE GEN PURP 1.2KV 45A TO247AD IXYS	2792	4.18	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	18pF @ 400V, 1MHz	-	20 µA @ 1200 V	1200 V	45A	-40°C ~ 175°C	1.28 V @ 45 A
RUR880 RECTIFIER DIODE, 8A, 800V Rochester Electronics, LLC	743	0.48	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	110 ns	25 µA @ 800 V	800 V	8A	-55°C ~ 175°C	1.8 V @ 8 A
JAN1N5617 DIODE GEN PURP 400V 1A AXIAL Microchip Technology	3034	4.30	- + Добавить Немедленный	Datenblatt	Bulk	Military, MIL-PRF-19500/429	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	150 ns	500 nA @ 400 V	400 V	1A	-65°C ~ 175°C	1.6 V @ 3 A
RUR8100 RECTIFIER DIODE, 8A, 1000V Rochester Electronics, LLC	894	0.49	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	110 ns	25 µA @ 1000 V	1000 V	8A	-55°C ~ 175°C	1.8 V @ 8 A
STPSC20065GY-TR DIODES AND RECTIFIERS STMicroelectronics	2795	7.18	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101, ECOPACK®2	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	1250pF @ 0V, 1MHz	0 ns	150 µA @ 600 V	650 V	20A	-40°C ~ 175°C	1.45 V @ 20 A
SBT1090 SCHOTTKY TO-220AC 90V 10A Diotec Semiconductor	1000	0.50	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	300 µA @ 90 V	90 V	10A	-50°C ~ 150°C	850 mV @ 10 A