Diodes-Rectifiers-Single - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
SDUR6060W DIODE GEN PURP 600V 60A TO247AC SMC Diode Solutions	2240	2.75	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	100 µA @ 600 V	600 V	60A	-55°C ~ 150°C	2 V @ 60 A
UF4007 R-1000V 1A ULTRA FAST NTE Electronics, Inc	160	0.27	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	75 ns	10 µA @ 1000 V	1000 V	1A	-65°C ~ 150°C	1.7 V @ 1 A
C3D04060A DIODE SCHOTTKY 600V 4A TO220-2 Wolfspeed, Inc.	3973	2.86	- + Добавить Немедленный	Datenblatt	Tube	Z-Rec®	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Not For New Designs	Through Hole	251pF @ 0V, 1MHz	0 ns	50 µA @ 600 V	600 V	13.5A (DC)	-55°C ~ 175°C	1.8 V @ 4 A
RGP15G R-400V 1.5A FAST SW NTE Electronics, Inc	500	0.28	- + Добавить Немедленный	Datenblatt	Bag	RGP15	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	25pF @ 4V, 1MHz	150 ns	5 µA @ 400 V	400 V	1.5A	-	1.3 V @ 1.5 A
C3D04060F DIODE SCHOTTKY 600V 4A TO220-F2 Wolfspeed, Inc.	3144	2.86	- + Добавить Немедленный	Datenblatt	Tube	Z-Rec®	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	251pF @ 0V, 1MHz	0 ns	50 µA @ 600 V	600 V	6A (DC)	-55°C ~ 175°C	1.7 V @ 4 A
RGP15D R-200V 1.5A FAST SW NTE Electronics, Inc	183	0.28	- + Добавить Немедленный	Datenblatt	Bag	RGP15	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	25pF @ 4V, 1MHz	150 ns	5 µA @ 200 V	200 V	1.5A	-	1.3 V @ 1.5 A
DNA30E2200PZ-TRL DIODE GEN PURP 2.2KV 30A TO263 IXYS	3799	4.72	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	7pF @ 700V, 1MHz	-	40 µA @ 2200 V	2200 V	30A	-55°C ~ 150°C	1.26 V @ 30 A
P600S DIODE STD D8X7.5 1200V 6A Diotec Semiconductor	1000	0.29	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 1200 V	1200 V	6A	-50°C ~ 175°C	1.1 V @ 6 A
DNA30EM2200PZ-TRL DIODE GEN PURP 2.2KV 30A TO263 IXYS	3566	4.72	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	7pF @ 700V, 1MHz	-	40 µA @ 2200 V	2200 V	30A	-55°C ~ 150°C	1.26 V @ 30 A
NTE620 D-400V .5AMP SURFACE MNT NTE Electronics, Inc	754	0.29	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	7pF @ 4V, 1MHz	-	5 µA @ 400 V	400 V	500mA	-65°C ~ 175°C	1.2 V @ 500 mA
VS-20ETS12-M3 DIODE GEN PURP 1.2KV 20A TO220AC Vishay General Semiconductor - Diodes Division	2433	2.97	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 1200 V	1200 V	20A	-40°C ~ 150°C	1 V @ 10 A
GI851/MR851 R- 100 PRV 3A NTE Electronics, Inc	933	0.30	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	28pF @ 4V, 1MHz	200 ns	10 µA @ 100 V	100 V	3A	-50°C ~ 150°C	1.25 V @ 3 A
APT60D40BG DIODE GEN PURP 400V 60A TO247 Microchip Technology	3466	2.99	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	37 ns	250 µA @ 400 V	400 V	60A	-55°C ~ 175°C	1.5 V @ 60 A
GI852/MR852 R-200 PRV 3A NTE Electronics, Inc	188	0.32	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	28pF @ 4V, 1MHz	200 ns	10 µA @ 200 V	200 V	3A	-50°C ~ 150°C	1.25 V @ 3 A
C4D02120E DIODE SCHOTTKY 1.2KV 2A TO252-2 Wolfspeed, Inc.	2031	2.99	- + Добавить Немедленный	Datenblatt	Tube	Z-Rec®	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	167pF @ 0V, 1MHz	0 ns	50 µA @ 1200 V	1200 V	10A (DC)	-55°C ~ 175°C	1.8 V @ 2 A
GI854/MR854 R-400 PRV 3A NTE Electronics, Inc	104	0.32	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	28pF @ 4V, 1MHz	200 ns	10 µA @ 400 V	400 V	3A	-50°C ~ 150°C	1.25 V @ 3 A
MBRF40250TG DIODE SCHOTTKY 250V 40A TO220FP Rochester Electronics, LLC	3687	3.02	- + Добавить Немедленный	Datenblatt	Bulk,Tube,Tube	SWITCHMODE™	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	500pF @ 5V, 1MHz	35 ns	30 µA @ 250 V	250 V	40A	-65°C ~ 150°C	970 mV @ 40 A
FE6A DIODE SFR D8X7.5 50V 6A Diotec Semiconductor	1000	0.33	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	5 µA @ 50 V	50 V	6A	-50°C ~ 175°C	980 mV @ 5 A
STTH1512G DIODE GEN PURP 1.2KV 15A D2PAK STMicroelectronics	3757	3.03	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	105 ns	15 µA @ 1200 V	1200 V	15A	175°C (Max)	2.1 V @ 15 A
SK54BL_R1_00001 SMB, SKY Panjit International Inc.	893	0.66	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 40 V	40 V	5A	-55°C ~ 150°C	460 mV @ 5 A