Diodes-Rectifiers-Single - Element(Гонконг) Technology Co., Ltd.

English

Deutsch

Русский

Türkiye

Français

Добро пожаловать Element Technology Co., Ltd.！

+86 15361839241 +86 0755-23603516

Грузовой

Все категории

Другие категории продукции >>

Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
VS-20ETS08S-M3 DIODE GEN PURP 800V 20A TO263AB Vishay General Semiconductor - Diodes Division	2034	2.30	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	100 µA @ 800 V	800 V	20A	-40°C ~ 150°C	1.1 V @ 20 A
SB350 SchottkyD, 50V, 3A DComponents	15300	0.47	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 50 V	50 V	3A	-50°C ~ 150°C	680 mV @ 3 A
IDM05G120C5XTMA1 DIODE SCHOTTKY 1200V 5A TO252-2 Infineon Technologies	3069	3.51	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT),Bulk	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	301pF @ 1V, 1MHz	0 ns	33 µA @ 1200 V	1200 V	5A (DC)	-55°C ~ 175°C	1.8 V @ 5 A
GL34K-CT CUT-TAPE VERSION. STANDARD RECO DComponents	2500	0.48	- + Добавить Немедленный	Datenblatt	Strip		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	1.5 µs	5 µA @ 800 V	800 V	500mA	-50°C ~ 175°C	1.3 V @ 500 mA
STPSC2H12D DIODE SCHOTTKY 1.2KV 2A TO220AC STMicroelectronics	3242	2.35	- + Добавить Немедленный	Datenblatt	Tube	ECOPACK®2	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	190pF @ 0V, 1MHz	0 ns	12 µA @ 1200 V	1200 V	2A	-40°C ~ 175°C	1.5 V @ 2 A
SB340 SchottkyD, 40V, 3A DComponents	45900	0.48	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 40 V	40 V	3A	-50°C ~ 150°C	490 mV @ 3 A
IDH04G65C5XKSA2 DIODE SCHOTTKY 650V 4A TO220-2-1 Rochester Electronics, LLC	3003	2.39	- + Добавить Немедленный	Datenblatt	Bulk,Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	130pF @ 1V, 1MHz	0 ns	70 µA @ 650 V	650 V	4A (DC)	-55°C ~ 175°C	1.7 V @ 4 A
VS-10ETS12FP-M3 DIODE GEN PURP 1.2KV 10A TO220FP Vishay General Semiconductor - Diodes Division	3289	2.41	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	50 µA @ 1200 V	1200 V	10A	-40°C ~ 150°C	1.1 V @ 10 A
STTH812D DIODE GEN PURP 1.2KV 8A TO220AC STMicroelectronics	3435	2.44	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	100 ns	8 µA @ 1200 V	1200 V	8A	175°C (Max)	2.2 V @ 8 A
SK54_R1_00001 SMC, SKY Panjit International Inc.	900	0.55	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	200 µA @ 40 V	40 V	5A	-55°C ~ 150°C	550 mV @ 5 A
VS-HFA16TB120-M3 DIODE FRED 1.2KV 16A TO220AC Vishay General Semiconductor - Diodes Division	3307	2.45	- + Добавить Немедленный	Datenblatt	Tube	HEXFRED®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	135 ns	20 µA @ 1200 V	1200 V	16A (DC)	-55°C ~ 150°C	3.93 V @ 32 A
UF4005 R-600V 1A ULTRA FAST NTE Electronics, Inc	187	0.23	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	75 ns	10 µA @ 600 V	600 V	1A	-65°C ~ 150°C	1.7 V @ 1 A
VS-20ETS16THM3 RECTIFIER DIODE 20A 1600V TO-220 Vishay General Semiconductor - Diodes Division	2232	2.50	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 1600 V	1600 V	20A	-40°C ~ 150°C	1.1 V @ 20 A
RGP15B R-100V 1.5A FAST SW NTE Electronics, Inc	422	0.24	- + Добавить Немедленный	Datenblatt	Bag	RGP15	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	25pF @ 4V, 1MHz	150 ns	5 µA @ 100 V	100 V	1.5A	-	1.3 V @ 1.5 A
APT30S20BG DIODE SCHOTTKY 200V 45A TO247 Microchip Technology	3237	2.52	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	55 ns	500 µA @ 200 V	200 V	45A	-55°C ~ 150°C	850 mV @ 30 A
MURB3JG_R1_00001 SMB, SUPER Panjit International Inc.	800	0.48	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	28pF @ 4V, 1MHz	50 ns	5 µA @ 600 V	600 V	3A	-55°C ~ 175°C	1.25 V @ 3 A
VS-20ETS08-M3 DIODE GEN PURP 800V 20A TO220AC Vishay General Semiconductor - Diodes Division	3491	2.57	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 800 V	800 V	20A	-40°C ~ 150°C	1.1 V @ 20 A
UF4006 R-800V 1A ULTRA FAST NTE Electronics, Inc	430	0.25	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	75 ns	10 µA @ 800 V	800 V	1A	-65°C ~ 150°C	1.7 V @ 1 A
STTH12R06DIRG DIODE GEN PURP 600V 12A TO220AC STMicroelectronics	3742	2.70	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	45 ns	45 µA @ 600 V	600 V	12A	175°C (Max)	2.9 V @ 12 A
1N5817 R-SCHOTTKY 20V 1A NTE Electronics, Inc	220	0.27	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	110pF @ 4V, 1MHz	-	500 µA @ 20 V	20 V	1A	-65°C ~ 125°C	450 mV @ 1 A