Diodes-Rectifiers-Single - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
STBR6008WY AUTOMOTIVE 800 V, 60 A BRIDGE STMicroelectronics	3820	5.35	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	5 µA @ 800 V	800 V	60A	-40°C ~ 175°C	1.1 V @ 60 A
SBJ1845 SCHOTTKY ITO-220AC 45V 18A Diotec Semiconductor	1000	0.55	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 45 V	45 V	18A	-50°C ~ 150°C	580 V @ 18 A
DH20-18A DIODE GEN PURP 1.8KV 20A TO247 IXYS	2385	5.57	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	300 ns	50 µA @ 1800 V	1800 V	20A	-55°C ~ 150°C	2.24 V @ 20 A
SBJ1840 SCHOTTKY ITO-220AC 40V 18A Diotec Semiconductor	1000	0.55	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 40 V	40 V	18A	-50°C ~ 150°C	580 mV @ 18 A
STTH60L06W DIODE GEN PURP 600V 60A DO247 STMicroelectronics	2466	5.61	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	105 ns	50 µA @ 600 V	600 V	60A	175°C (Max)	1.55 V @ 60 A
1N5822 R-SCHOTTKY 40V 3A NTE Electronics, Inc	656	0.56	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	190pF @ 4V, 1MHz	-	500 µA @ 40 V	40 V	3A	-65°C ~ 125°C	525 mV @ 3 A
VS-40EPS12-M3 DIODE GEN PURP 1.2KV 40A TO247AC Vishay General Semiconductor - Diodes Division	3177	5.71	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 1200 V	1200 V	40A	-40°C ~ 150°C	1 V @ 20 A
NTE593 D-SI HI SPEED SWITCH NTE Electronics, Inc	279	0.56	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	2pF @ 0V, 1MHz	6 ns	1 µA @ 75 V	75 V	250mA	150°C	1.25 V @ 150 mA
CDLL5819 DIODE SCHOTTKY 45V 1A DO213AB Microchip Technology	2235	5.74	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	70pF @ 5V, 1MHz	-	50 µA @ 45 V	45 V	1A	-65°C ~ 125°C	490 mV @ 1 A
NTE592 D-SI HI VLTG GEN PURP NTE Electronics, Inc	3617	0.56	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	5pF @ 0V, 1MHz	50 ns	100 nA @ 200 V	200 V	200mA (DC)	150°C	1.25 V @ 200 mA
DSEI60-10A DIODE GEN PURP 1KV 60A TO247AD IXYS	2484	5.74	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	3 mA @ 1000 V	1000 V	60A	-40°C ~ 150°C	2.3 V @ 60 A
PX1500B DIODE STD D8X7.5 100V 15A Diotec Semiconductor	1000	0.58	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 100 V	100 V	15A	-50°C ~ 175°C	1 V @ 15 A
VS-65EPS16LHM3 DIODES - TO-247-E3 Vishay General Semiconductor - Diodes Division	2891	5.83	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 1600 V	1600 V	65A	-40°C ~ 150°C	1.17 V @ 65 A
F1200B DIODE FR D8X7.5 100V 12A Diotec Semiconductor	1000	0.59	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	200 ns	5 µA @ 100 V	100 V	12A	-50°C ~ 150°C	910 mV @ 12 A
IDH12G65C5XKSA2 DIODE SCHOTKY 650V 12A TO220-2-1 Infineon Technologies	3003	6.11	- + Добавить Немедленный	Datenblatt	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	360pF @ 1V, 1MHz	0 ns	190 µA @ 650 V	650 V	12A (DC)	-55°C ~ 175°C	1.7 V @ 12 A
RHRP890 RECTIFIER DIODE Rochester Electronics, LLC	968	0.60	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	65 ns	100 µA @ 900 V	900 V	8A	-65°C ~ 175°C	3 V @ 8 A
IDH10G120C5XKSA1 DIODE SCHOT 1200V 10A TO220-2-1 Rochester Electronics, LLC	2341	2.83	- + Добавить Немедленный	Datenblatt	Bulk,Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	525pF @ 1V, 1MHz	0 ns	62 µA @ 1200 V	1200 V	10A (DC)	-55°C ~ 175°C	1.8 V @ 10 A
RGP30B R-100V 3A FAST SW NTE Electronics, Inc	361	0.60	- + Добавить Немедленный	Datenblatt	Bag	RGP30	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	150 ns	5 µA @ 100 V	100 V	3A	-	1.3 V @ 3 A
C4D05120A DIODE SCHOTTKY 1.2KV 8.2A TO220 Wolfspeed, Inc.	2698	6.69	- + Добавить Немедленный	Datenblatt	Tube	Z-Rec®	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	390pF @ 0V, 1MHz	0 ns	150 µA @ 1200 V	1200 V	19A (DC)	-55°C ~ 175°C	1.8 V @ 5 A
PX1500D DIODE STD D8X7.5 200V 15A Diotec Semiconductor	1000	0.60	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 200 V	200 V	15A	-50°C ~ 175°C	1 V @ 15 A