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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDP4D5N10C

FDP4D5N10C

MOSFET N-CH 100V 128A TO220-3

onsemi

2652 6.38
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FDP4D5N10C

Datenblatt

Bulk,Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 128A (Tc) 10V 4.5mOhm @ 100A, 10V 4V @ 310µA 68 nC @ 10 V ±20V 5065 pF @ 50 V - 2.4W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTHL067N65S3H

NTHL067N65S3H

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

2947 7.56
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NTHL067N65S3H

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Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 40A (Tc) 10V 67mOhm @ 20A, 10V 4V @ 3.9mA 80 nC @ 10 V ±30V 3750 pF @ 400 V - 266W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP065N60E-BE3

SIHP065N60E-BE3

N-CHANNEL 600V

Vishay Siliconix

2053 7.61
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SIHP065N60E-BE3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 65mOhm @ 16A, 10V 5V @ 250µA 74 nC @ 10 V ±30V 2700 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB0260N1007L

FDB0260N1007L

MOSFET N-CH 100V 200A TO263-7

onsemi

3426 6.56
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FDB0260N1007L

Datenblatt

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Tc) 10V 2.6mOhm @ 27A, 10V 4V @ 250µA 118 nC @ 10 V ±20V 8545 pF @ 50 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STW23N85K5

STW23N85K5

MOSFET N-CH 850V 19A TO247

STMicroelectronics

2971 7.67
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STW23N85K5

Datenblatt

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 850 V 19A (Tc) 10V 275mOhm @ 9.5A, 10V 5V @ 100µA 38 nC @ 10 V ±30V 1650 pF @ 100 V - 250W (Tc) 150°C (TJ) Through Hole
G3R160MT12J

G3R160MT12J

SIC MOSFET N-CH 22A TO263-7

GeneSiC Semiconductor

2578 7.69
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G3R160MT12J

Datenblatt

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 22A (Tc) 15V 192mOhm @ 10A, 15V 2.69V @ 5mA 28 nC @ 15 V ±15V 730 pF @ 800 V - 128W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDPF4D5N10C

FDPF4D5N10C

MOSFET N-CH 100V 128A TO220F

onsemi

2905 6.60
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FDPF4D5N10C

Datenblatt

Bulk,Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 128A (Tc) 10V 4.5mOhm @ 100A, 10V 4V @ 310µA 68 nC @ 10 V ±20V 5065 pF @ 50 V - 2.4W (Ta), 37.5W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA60R099P6XKSA1

IPA60R099P6XKSA1

MOSFET N-CH 600V 37.9A TO220-FP

Infineon Technologies

3976 7.83
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IPA60R099P6XKSA1

Datenblatt

Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 37.9A (Tc) 10V 99mOhm @ 14.5A, 10V 4.5V @ 1.21mA 70 nC @ 10 V ±20V 3330 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R110CFD7XKSA1

IPW65R110CFD7XKSA1

HIGH POWER_NEW

Infineon Technologies

2146 7.89
- +

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IPW65R110CFD7XKSA1

Datenblatt

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 110mOhm @ 9.7A, 10V 4.5V @ 480µA 41 nC @ 10 V ±20V 1942 pF @ 400 V - 114W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDH047AN08A0

FDH047AN08A0

MOSFET N-CH 75V 15A TO247-3

onsemi

2802 6.76
- +

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FDH047AN08A0

Datenblatt

Bulk,Tube - Active N-Channel MOSFET (Metal Oxide) 75 V 15A (Tc) 6V, 10V 4.7mOhm @ 80A, 10V 4V @ 250µA 138 nC @ 10 V ±20V 6600 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTPF082N65S3F

NTPF082N65S3F

MOSFET N-CH 650V 40A TO220F

onsemi

3573 6.77
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NTPF082N65S3F

Datenblatt

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 40A (Tc) 10V 82mOhm @ 20A, 10V 5V @ 4mA 70 nC @ 10 V ±30V 3240 pF @ 400 V - 48W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMBG120R140M1HXTMA1

IMBG120R140M1HXTMA1

SICFET N-CH 1.2KV 18A TO263

Infineon Technologies

3460 12.55
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IMBG120R140M1HXTMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 18A (Tc) - 189mOhm @ 6A, 18V 5.7V @ 2.5mA 13.4 nC @ 18 V +18V, -15V 491 pF @ 800 V Standard 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQW44N65EF-GE3

SQW44N65EF-GE3

E SERIES POWER MOSFET WITH FAST

Vishay Siliconix

2578 8.03
- +

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SQW44N65EF-GE3

Datenblatt

Bulk Automotive, AEC-Q101, E Active N-Channel MOSFET (Metal Oxide) 650 V 47A (Tc) 10V 73mOhm @ 22A, 10V 4V @ 250µA 266 nC @ 10 V ±30V 5858 pF @ 100 V - 500W (Tc) -55°C ~ 175°C (TJ) Through Hole
LSIC1MO170E0750

LSIC1MO170E0750

SICFET N-CH 1700V 750OHM TO247-3

Littelfuse Inc.

2511 8.09
- +

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LSIC1MO170E0750

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 1700 V 6.2A (Tc) 20V 1Ohm @ 2A, 20V 4V @ 1mA 13 nC @ 20 V +22V, -6V 200 pF @ 1000 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH230N075T2

IXFH230N075T2

MOSFET N-CH 75V 230A TO247AD

IXYS

2821 8.11
- +

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IXFH230N075T2

Datenblatt

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 230A (Tc) 10V 4.2mOhm @ 50A, 10V 4V @ 250µA 178 nC @ 10 V ±20V 10500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMBG65R072M1HXTMA1

IMBG65R072M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies

2574 13.25
- +

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Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
APT14F100B

APT14F100B

MOSFET N-CH 1000V 14A TO247

Microchip Technology

2407 8.13
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APT14F100B

Datenblatt

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 14A (Tc) 10V 980mOhm @ 7A, 10V 5V @ 1mA 120 nC @ 10 V ±30V 3965 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB65R041CFD7ATMA1

IPB65R041CFD7ATMA1

HIGH POWER_NEW

Infineon Technologies

2311 13.77
- +

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IPB65R041CFD7ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 50A (Tc) 10V 41mOhm @ 24.8A, 10V 4.5V @ 1.24mA 102 nC @ 10 V ±20V 4975 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPW65R090CFD7XKSA1

IPW65R090CFD7XKSA1

HIGH POWER_NEW

Infineon Technologies

2335 8.47
- +

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IPW65R090CFD7XKSA1

Datenblatt

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 25A (Tc) 10V 90mOhm @ 12.5A, 10V 4.5V @ 630µA 53 nC @ 10 V ±20V 2513 pF @ 400 V - 127W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF2D3N10C

FDPF2D3N10C

MOSFET N-CH 100V 222A TO220F

onsemi

2743 7.20
- +

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Немедленный

FDPF2D3N10C

Datenblatt

Bulk,Tube,Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 222A (Tc) 10V 2.3mOhm @ 100A, 10V 4V @ 700µA 152 nC @ 10 V ±20V 11180 pF @ 50 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
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