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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STP23N80K5

STP23N80K5

MOSFET N-CH 800V 16A TO220-3

STMicroelectronics

2625 5.94
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STP23N80K5

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Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 800 V 16A (Tc) 10V 280mOhm @ 8A, 10V 5V @ 100µA 33 nC @ 10 V ±30V 1000 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHK055N60EF-T1GE3

SIHK055N60EF-T1GE3

E SERIES POWER MOSFET WITH FAST

Vishay Siliconix

3039 9.46
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SIHK055N60EF-T1GE3

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Tape & Reel (TR),Cut Tape (CT) EF Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 58mOhm @ 16A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 3667 pF @ 100 V - 236W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCH099N65S3-F155

FCH099N65S3-F155

MOSFET N-CH 650V 30A TO247-3

onsemi

3295 5.40
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FCH099N65S3-F155

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Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 99mOhm @ 15A, 10V 4.5V @ 3mA 61 nC @ 10 V ±30V 2480 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA3N100D2HV

IXTA3N100D2HV

MOSFET N-CH 1000V 3A TO263HV

IXYS

2600 5.40
- +

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IXTA3N100D2HV

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Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 3A (Tj) 0V 6Ohm @ 1.5A, 0V 4.5V @ 250µA 37.5 nC @ 5 V ±20V 1020 pF @ 25 V Depletion Mode 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCP170N60

FCP170N60

MOSFET N-CH 600V 22A TO220-3

onsemi

3114 5.41
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FCP170N60

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Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 170mOhm @ 11A, 10V 3.5V @ 250µA 55 nC @ 10 V ±20V 2860 pF @ 380 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP24N65X2

IXTP24N65X2

MOSFET N-CH 650V 24A TO220AB

IXYS

3773 6.00
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IXTP24N65X2

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Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 2060 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP76N25T

IXTP76N25T

MOSFET N-CH 250V 76A TO220AB

IXYS

3521 6.08
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IXTP76N25T

Datenblatt

Tube Trench Active N-Channel MOSFET (Metal Oxide) 250 V 76A (Tc) 10V 39mOhm @ 500mA, 10V 5V @ 1mA 92 nC @ 10 V ±30V 4500 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R155CFD7XKSA1

IPW65R155CFD7XKSA1

HIGH POWER_NEW

Infineon Technologies

2284 6.16
- +

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IPW65R155CFD7XKSA1

Datenblatt

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 155mOhm @ 6.4A, 10V 4.5V @ 320µA 28 nC @ 10 V ±20V 1283 pF @ 400 V - 77W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP330P10NMAKSA1

IPP330P10NMAKSA1

TRENCH >=100V PG-TO220-3

Infineon Technologies

2860 6.16
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IPP330P10NMAKSA1

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Tube OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 100 V 6.9A (Ta), 62A (Tc) 10V 33mOhm @ 53A, 10V 4V @ 5.55mA 236 nC @ 10 V ±20V 11000 pF @ 50 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMBG120R350M1HXTMA1

IMBG120R350M1HXTMA1

SICFET N-CH 1.2KV 4.7A TO263

Infineon Technologies

3447 9.71
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IMBG120R350M1HXTMA1

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Tape & Reel (TR),Cut Tape (CT) CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 4.7A (Tc) - 468mOhm @ 2A, 18V 5.7V @ 1mA 5.9 nC @ 18 V +18V, -15V 196 pF @ 800 V Standard 65W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUM60061EL-GE3

SUM60061EL-GE3

P-CHANNEL 80 V (D-S) MOSFET D2PA

Vishay Siliconix

2653 6.21
- +

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SUM60061EL-GE3

Datenblatt

Bulk TrenchFET® Active P-Channel MOSFET (Metal Oxide) 80 V 150A (Tc) 4.5V, 10V 6.1mOhm @ 20A, 10V 2.5V @ 250µA 218 nC @ 10 V ±20V 9600 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPTG210N25NM3FDATMA1

IPTG210N25NM3FDATMA1

TRENCH >=100V PG-HSOG-8

Infineon Technologies

2926 10.17
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IPTG210N25NM3FDATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 3 Active N-Channel MOSFET (Metal Oxide) 250 V 7.7A (Ta), 77A (Tc) 10V 21mOhm @ 69A, 10V 4V @ 267µA 81 nC @ 10 V ±20V 7000 pF @ 125 V - 3.8W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STP80N240K6

STP80N240K6

N-CHANNEL 800 V, 197 MOHM TYP.

STMicroelectronics

2428 20.00
- +

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STP80N240K6

Datenblatt

Tube MDmesh™ K6 Active N-Channel MOSFET (Metal Oxide) 800 V 16A (Tc) 10V 220mOhm @ 7A, 10V 4V @ 100µA 25.9 nC @ 10 V ±30V 1350 pF @ 100 V - 140W (Tc) -55°C ~ 150°C (TJ)
IPP60R125P6XKSA1

IPP60R125P6XKSA1

MOSFET N-CH 600V 30A TO220-3

Infineon Technologies

2671 6.29
- +

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Немедленный

IPP60R125P6XKSA1

Datenblatt

Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 125mOhm @ 11.6A, 10V 4.5V @ 960µA 56 nC @ 10 V ±20V 2660 pF @ 100 V - 219W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCH110N65F-F155

FCH110N65F-F155

MOSFET N-CH 650V 35A TO247

onsemi

2576 5.65
- +

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Немедленный

FCH110N65F-F155

Datenblatt

Tube FRFET®, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 110mOhm @ 17.5A, 10V 5V @ 3.5mA 145 nC @ 10 V ±20V 4895 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMBG65R107M1HXTMA1

IMBG65R107M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies

2870 10.39
- +

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Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
SQW33N65EF-GE3

SQW33N65EF-GE3

E SERIES POWER MOSFET WITH FAST

Vishay Siliconix

2619 6.49
- +

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Немедленный

SQW33N65EF-GE3

Datenblatt

Bulk Automotive, AEC-Q101, E Active N-Channel MOSFET (Metal Oxide) 650 V 34A (Tc) 10V 109mOhm @ 16.5A, 10V 4V @ 250µA 173 nC @ 10 V ±30V 3972 pF @ 100 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTHL095N65S3H

NTHL095N65S3H

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

450 6.53
- +

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NTHL095N65S3H

Datenblatt

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 95mOhm @ 15A, 10V 4V @ 2.8mA 58 nC @ 10 V ±30V 2833 pF @ 400 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP65R110CFD7XKSA1

IPP65R110CFD7XKSA1

HIGH POWER_NEW

Infineon Technologies

2484 6.60
- +

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Немедленный

IPP65R110CFD7XKSA1

Datenblatt

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 110mOhm @ 9.7A, 10V 4.5V @ 480µA 41 nC @ 10 V ±20V 1942 pF @ 400 V - 114W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB053N60E-GE3

SIHB053N60E-GE3

E SERIES POWER MOSFET D2PAK (TO-

Vishay Siliconix

2563 6.62
- +

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Немедленный

SIHB053N60E-GE3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 54mOhm @ 26.5A, 10V 5V @ 250µA 92 nC @ 10 V ±30V 3722 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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