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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STWA30N65DM6AG

STWA30N65DM6AG

MOSFET N-CH 650V 28A TO247

STMicroelectronics

2906 6.65
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Tube Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 110mOhm @ 14A, 10V 4.75V @ 250µA 46 nC @ 10 V ±25V 2000 pF @ 100 V - 284W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB055N60EF-GE3

SIHB055N60EF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

3365 6.75
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SIHB055N60EF-GE3

Datenblatt

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 46A (Tc) 10V 55mOhm @ 26.5A, 10V 5V @ 250µA 95 nC @ 10 V ±30V 3707 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDP2D3N10C

FDP2D3N10C

MOSFET N-CH 100V 222A TO220-3

onsemi

3135 1.00
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FDP2D3N10C

Datenblatt

Bulk,Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 222A (Tc) 10V 2.3mOhm @ 100A, 10V 4V @ 700µA 152 nC @ 10 V ±20V 11180 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
STO68N65DM6

STO68N65DM6

N-CHANNEL 650 V, 53 MOHM TYP., 5

STMicroelectronics

300 10.14
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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 55A (Tc) 10V 65mOhm @ 27.5A, 10V 4.75V @ 250µA 80 nC @ 10 V ±25V 3528 pF @ 100 V - 240W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFH14N60P

IXFH14N60P

MOSFET N-CH 600V 14A TO247AD

IXYS

3580 5.96
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IXFH14N60P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 550mOhm @ 7A, 10V 5.5V @ 2.5mA 36 nC @ 10 V ±30V 2500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFAF42

IRFAF42

MOSFET N-CH 500V 7A TO204AE

International Rectifier

2152 6.00
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IRFAF42

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 500 V 7A - - - - - - - 125W - Through Hole
IXTP260N055T2

IXTP260N055T2

MOSFET N-CH 55V 260A TO220AB

IXYS

2791 6.90
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IXTP260N055T2

Datenblatt

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 260A (Tc) 10V 3.3mOhm @ 50A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 10800 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTP230N075T2

IXTP230N075T2

MOSFET N-CH 75V 230A TO220AB

IXYS

2494 6.90
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IXTP230N075T2

Datenblatt

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 230A (Tc) 10V 4.2mOhm @ 50A, 10V 4V @ 250µA 178 nC @ 10 V ±20V 10500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFP36N60X3

IXFP36N60X3

MOSFET ULTRA JCT 600V 36A TO220

IXYS

3730 6.92
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IXFP36N60X3

Datenblatt

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 90mOhm @ 18A, 10V 5V @ 2.5mA 29 nC @ 10 V ±20V 2030 pF @ 25 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH24N65X2

IXTH24N65X2

MOSFET N-CH 650V 24A TO247

IXYS

3167 6.98
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IXTH24N65X2

Datenblatt

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 2060 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA30N25X3

IXFA30N25X3

MOSFET N-CHANNEL 250V 30A TO263

IXYS

2644 6.99
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IXFA30N25X3

Datenblatt

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 30A (Tc) 10V 60mOhm @ 15A, 10V 4.5V @ 500µA 21 nC @ 10 V ±20V 1450 pF @ 25 V - 176W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFB8409

AUIRFB8409

MOSFET N-CH 40V 195A TO220AB

Infineon Technologies

3721 1.00
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AUIRFB8409

Datenblatt

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.3mOhm @ 100A, 10V 3.9V @ 250µA 450 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFA7N100P

IXFA7N100P

MOSFET N-CH 1000V 7A TO263

IXYS

2674 7.02
- +

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IXFA7N100P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 7A (Tc) 10V 1.9Ohm @ 3.5A, 10V 6V @ 1mA 47 nC @ 10 V ±30V 2590 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPDQ60R065S7XTMA1

IPDQ60R065S7XTMA1

HIGH POWER_NEW PG-HDSOP-22

Infineon Technologies

2206 10.86
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IPDQ60R065S7XTMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 12V 65mOhm @ 8A, 12V 4.5V @ 490µA 51 nC @ 12 V ±20V 1932 pF @ 300 V - 195W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPW65R125CFD7XKSA1

IPW65R125CFD7XKSA1

HIGH POWER_NEW

Infineon Technologies

3008 7.14
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IPW65R125CFD7XKSA1

Datenblatt

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 125mOhm @ 8.5A, 10V 4.5V @ 420µA 36 nC @ 10 V ±20V 1694 pF @ 400 V - 98W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMBG65R083M1HXTMA1

IMBG65R083M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies

2423 11.93
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Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
IPW65R145CFD7AXKSA1

IPW65R145CFD7AXKSA1

MOSFET N-CH 650V 17A TO247-3

Infineon Technologies

3089 7.35
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IPW65R145CFD7AXKSA1

Datenblatt

Tube Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) - 145mOhm @ 8.5A, 10V 4.5V @ 420µA 36 nC @ 10 V ±20V 1694 pF @ 400 V - 98W (Tc) -40°C ~ 150°C (TJ) Through Hole
NTP055N65S3H

NTP055N65S3H

MOSFET N-CH 650V 47A TO220-3

onsemi

2177 6.30
- +

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Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 47A (Tc) 10V 55mOhm @ 23.5A, 10V 4V @ 4.8mA 96 nC @ 10 V ±30V 4305 pF @ 400 V - 305W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP032N08

FDP032N08

MOSFET N-CH 75V 120A TO220-3

onsemi

3618 6.31
- +

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FDP032N08

Datenblatt

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 3.2mOhm @ 75A, 10V 4.5V @ 250µA 220 nC @ 10 V ±20V 15160 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
STF42N60M2-EP

STF42N60M2-EP

MOSFET N-CH 600V 34A TO220FP

STMicroelectronics

3560 7.44
- +

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STF42N60M2-EP

Datenblatt

Tube MDmesh™ M2-EP Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 87mOhm @ 17A, 10V 4.75V @ 250µA 55 nC @ 10 V ±25V 2370 pF @ 100 V - 40W (Tc) 150°C (TJ) Through Hole
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