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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDPF045N10A

FDPF045N10A

MOSFET N-CH 100V 67A TO220F

onsemi

3074 1.00
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FDPF045N10A

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Bulk,Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 67A (Tc) 10V 4.5mOhm @ 67A, 10V 4V @ 250µA 74 nC @ 10 V ±20V 5270 pF @ 50 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA76P10T-TRL

IXTA76P10T-TRL

MOSFET P-CH 100V 76A TO263

IXYS

3534 7.10
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Tape & Reel (TR),Cut Tape (CT) TrenchP™ Active P-Channel MOSFET (Metal Oxide) 100 V 76A (Tc) 10V 25mOhm @ 38A, 10V 4V @ 250µA 197 nC @ 10 V ±15V 13700 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVMFS5C604NLWFAFT1G

NVMFS5C604NLWFAFT1G

MOSFET N-CH 60V 287A 5DFN

onsemi

2449 5.95
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NVMFS5C604NLWFAFT1G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 287A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 2V @ 250µA 52 nC @ 4.5 V ±20V 8900 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
R6030KNXC7

R6030KNXC7

MOSFET N-CH 600V 30A TO220FM

Rohm Semiconductor

3642 4.46
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R6030KNXC7

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 130mOhm @ 14.5A, 10V 5V @ 1mA 56 nC @ 10 V ±20V 2350 pF @ 25 V - 86W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK72A12N1,S4X

TK72A12N1,S4X

MOSFET N-CH 120V 72A TO220SIS

Toshiba Semiconductor and Storage

2865 3.15
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TK72A12N1,S4X

Datenblatt

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 120 V 72A (Tc) 10V 4.5mOhm @ 36A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 8100 pF @ 60 V - 45W (Tc) 150°C (TJ) Through Hole
IPI045N10N3GXKSA1

IPI045N10N3GXKSA1

MOSFET N-CH 100V 100A TO262-3

Infineon Technologies

3396 1.00
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IPI045N10N3GXKSA1

Datenblatt

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 4.5mOhm @ 100A, 10V 3.5V @ 150µA 117 nC @ 10 V ±20V 8410 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP50R199CPXKSA1

IPP50R199CPXKSA1

MOSFET N-CH 550V 17A TO220-3

Infineon Technologies

2388 1.00
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IPP50R199CPXKSA1

Datenblatt

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 550 V 17A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 660µA 45 nC @ 10 V ±20V 1800 pF @ 100 V - 139W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB036N12N3GATMA1

IPB036N12N3GATMA1

MOSFET N-CH 120V 180A TO263-7

Infineon Technologies

3750 7.32
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IPB036N12N3GATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 180A (Tc) 10V 3.6mOhm @ 100A, 10V 4V @ 270µA 211 nC @ 10 V ±20V 13800 pF @ 60 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPL60R085P7AUMA1

IPL60R085P7AUMA1

MOSFET N-CH 650V 39A 4VSON

Infineon Technologies

3587 1.00
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IPL60R085P7AUMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 39A (Tc) 10V 85mOhm @ 11.8A, 10V 4V @ 590µA 51 nC @ 10 V ±20V 2180 pF @ 400 V - 154W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IXFP26N30X3

IXFP26N30X3

MOSFET N-CH 300V 26A TO220AB

IXYS

2685 4.58
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IXFP26N30X3

Datenblatt

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 26A (Tc) 10V 66mOhm @ 13A, 10V 4.5V @ 500µA 22 nC @ 10 V ±20V 1465 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTPF110N65S3HF

NTPF110N65S3HF

MOSFET N-CH 650V 30A TO220FP

onsemi

2662 4.60
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NTPF110N65S3HF

Datenblatt

Tube FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 110mOhm @ 15A, 10V 5V @ 740µA 62 nC @ 10 V ±30V 2635 pF @ 400 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB125N60EF-GE3

SIHB125N60EF-GE3

MOSFET N-CH 600V 25A D2PAK

Vishay Siliconix

3257 4.61
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SIHB125N60EF-GE3

Datenblatt

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 125mOhm @ 12A, 10V 5V @ 250µA 47 nC @ 10 V ±30V 1533 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHH27N60EF-T1-GE3

SIHH27N60EF-T1-GE3

MOSFET N-CH 600V 29A PPAK 8 X 8

Vishay Siliconix

2299 7.33
- +

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SIHH27N60EF-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 100mOhm @ 13.5A, 10V 4V @ 250µA 135 nC @ 10 V ±30V 2609 pF @ 100 V - 202W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCHD125N65S3R0-F155

FCHD125N65S3R0-F155

MOSFET N-CH 650V 24A TO247

onsemi

3726 4.62
- +

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FCHD125N65S3R0-F155

Datenblatt

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 125mOhm @ 12A, 10V 4.5V @ 590µA 46 nC @ 10 V ±30V 1940 pF @ 400 V - 181W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF11NM60ND

STF11NM60ND

MOSFET N-CH 600V 10A TO220FP

STMicroelectronics

3730 4.63
- +

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STF11NM60ND

Datenblatt

Tube FDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 450mOhm @ 5A, 10V 5V @ 250µA 30 nC @ 10 V ±25V 850 pF @ 50 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT11N80BC3G

APT11N80BC3G

MOSFET N-CH 800V 11A TO247

Microchip Technology

3140 4.64
- +

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APT11N80BC3G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 450mOhm @ 7.1A, 10V 3.9V @ 680µA 60 nC @ 10 V ±20V 1585 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK17A65W5,S5X

TK17A65W5,S5X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

3474 3.29
- +

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TK17A65W5,S5X

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 17.3A (Ta) 10V 230mOhm @ 8.7A, 10V 4.5V @ 900µA 50 nC @ 10 V ±30V 1800 pF @ 300 V - 45W (Tc) 150°C Through Hole
IRFPF40PBF

IRFPF40PBF

MOSFET N-CH 900V 4.7A TO247-3

Vishay Siliconix

2180 4.66
- +

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IRFPF40PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 4.7A (Tc) 10V 2.5Ohm @ 2.8A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 1600 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF31N65M5

STF31N65M5

MOSFET N-CH 650V 22A TO220FP

STMicroelectronics

2475 4.67
- +

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Немедленный

STF31N65M5

Datenblatt

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 148mOhm @ 11A, 10V 5V @ 250µA 45 nC @ 10 V ±25V 816 pF @ 100 V - 30W (Tc) 150°C (TJ) Through Hole
STW14NK50Z

STW14NK50Z

MOSFET N-CH 500V 14A TO247-3

STMicroelectronics

3839 4.69
- +

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Немедленный

STW14NK50Z

Datenblatt

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 380mOhm @ 6A, 10V 4.5V @ 100µA 92 nC @ 10 V ±30V 2000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
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