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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
CSD18536KTTT

CSD18536KTTT

MOSFET N-CH 60V 200A/349A DDPAK

Texas Instruments

3168 6.26
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CSD18536KTTT

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Tape & Reel (TR),Cut Tape (CT) NexFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 200A (Ta), 349A (Tc) 4.5V, 10V 1.6mOhm @ 100A, 10V 2.2V @ 250µA 140 nC @ 10 V ±20V 11430 pF @ 30 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP023N08N5AKSA1

IPP023N08N5AKSA1

MOSFET N-CH 80V 120A TO220-3

Infineon Technologies

3501 5.35
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IPP023N08N5AKSA1

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Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 2.3mOhm @ 100A, 10V 3.8V @ 208µA 166 nC @ 10 V ±20V 12100 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQAF16N50

FQAF16N50

MOSFET N-CH 500V 11.3A TO3PF

onsemi

3364 5.37
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FQAF16N50

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Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 500 V 11.3A (Tc) 10V 320mOhm @ 5.65A, 10V 5V @ 250µA 75 nC @ 10 V ±30V 3000 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF2710T

FDPF2710T

MOSFET N-CH 250V 25A TO220F

onsemi

3316 5.37
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FDPF2710T

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Bulk,Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 250 V 25A (Tc) 10V 42.5mOhm @ 25A, 10V 5V @ 250µA 101 nC @ 10 V ±30V 7280 pF @ 25 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHH068N60E-T1-GE3

SIHH068N60E-T1-GE3

MOSFET N-CH 600V 34A PPAK 8 X 8

Vishay Siliconix

2489 8.53
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SIHH068N60E-T1-GE3

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Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 68mOhm @ 15A, 10V 5V @ 250µA 80 nC @ 10 V ±30V 2650 pF @ 100 V - 202W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUG80050E-GE3

SUG80050E-GE3

MOSFET N-CH 150V 100A TO247AC

Vishay Siliconix

2496 5.39
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SUG80050E-GE3

Datenblatt

Tube ThunderFET® Active N-Channel MOSFET (Metal Oxide) 150 V 100A (Tc) 7.5V, 10V 5.4mOhm @ 20A, 10V 4V @ 250µA 165 nC @ 10 V ±20V 6250 pF @ 75 V - 500W (Tc) -55°C ~ 175°C (TJ) Through Hole
NVMFS5C404NT1G

NVMFS5C404NT1G

MOSFET N-CH 40V 49A 5DFN

onsemi

3013 1.00
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NVMFS5C404NT1G

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 378A (Tc) 10V 0.7mOhm @ 50A, 10V 4V @ 250µA 128 nC @ 10 V ±20V 8400 pF @ 25 V - 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP50N25T

IXTP50N25T

MOSFET N-CH 250V 50A TO220AB

IXYS

3576 5.40
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IXTP50N25T

Datenblatt

Tube Trench Active N-Channel MOSFET (Metal Oxide) 250 V 50A (Tc) 10V 50mOhm @ 25A, 10V 5V @ 1mA 78 nC @ 10 V ±30V 4000 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R160P6FKSA1

IPW60R160P6FKSA1

MOSFET N-CH 600V 23.8A TO247-3

Infineon Technologies

2840 1.00
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IPW60R160P6FKSA1

Datenblatt

Bulk,Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 176W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R180C7XKSA1

IPA60R180C7XKSA1

MOSFET N-CH 600V 9A TO220-FP

Infineon Technologies

3475 3.86
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IPA60R180C7XKSA1

Datenblatt

Bulk,Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 180mOhm @ 5.3A, 10V 4V @ 260µA 24 nC @ 10 V ±20V 1080 pF @ 400 V - 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW10NK80Z

STW10NK80Z

MOSFET N-CH 800V 9A TO247-3

STMicroelectronics

2854 5.46
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STW10NK80Z

Datenblatt

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 800 V 9A (Tc) 10V 900mOhm @ 4.5A, 10V 4.5V @ 100µA 72 nC @ 10 V ±30V 2180 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP33N60DM2

STP33N60DM2

MOSFET N-CH 600V 24A TO220

STMicroelectronics

3843 5.46
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STP33N60DM2

Datenblatt

Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 130mOhm @ 12A, 10V 5V @ 250µA 43 nC @ 10 V ±25V 1870 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ130N10T

IXTQ130N10T

MOSFET N-CH 100V 130A TO3P

IXYS

2377 5.48
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IXTQ130N10T

Datenblatt

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 9.1mOhm @ 25A, 10V 4.5V @ 250µA 104 nC @ 10 V ±20V 5080 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHB120N60E-GE3

SIHB120N60E-GE3

MOSFET N-CH 600V 25A D2PAK

Vishay Siliconix

3585 5.49
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SIHB120N60E-GE3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1562 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP8NK100Z

STP8NK100Z

MOSFET N-CH 1000V 6.5A TO220AB

STMicroelectronics

2654 5.50
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STP8NK100Z

Datenblatt

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 1000 V 6.5A (Tc) 10V 1.85Ohm @ 3.15A, 10V 4.5V @ 100µA 102 nC @ 10 V ±30V 2180 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP23NM50N

STP23NM50N

MOSFET N-CH 500V 17A TO220-3

STMicroelectronics

3743 5.50
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STP23NM50N

Datenblatt

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 190mOhm @ 8.5A, 10V 4V @ 250µA 45 nC @ 10 V ±25V 1330 pF @ 50 V - 125W (Tc) 150°C (TJ) Through Hole
STP21N65M5

STP21N65M5

MOSFET N-CH 650V 17A TO220AB

STMicroelectronics

2752 5.51
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STP21N65M5

Datenblatt

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) 10V 190mOhm @ 8.5A, 10V 5V @ 250µA 50 nC @ 10 V ±25V 1950 pF @ 100 V - 125W (Tc) 150°C (TJ) Through Hole
IXFP22N60P3

IXFP22N60P3

MOSFET N-CH 600V 22A TO220AB

IXYS

2418 5.52
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IXFP22N60P3

Datenblatt

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 360mOhm @ 11A, 10V 5V @ 1.5mA 38 nC @ 10 V ±30V 2600 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP22N65X2

IXFP22N65X2

MOSFET N-CH 650V 22A TO220

IXYS

2530 5.52
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IXFP22N65X2

Datenblatt

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 160mOhm @ 11A, 10V 5.5V @ 1.5mA 38 nC @ 10 V ±30V 2310 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
CSD19506KTTT

CSD19506KTTT

MOSFET N-CH 80V 200A DDPAK

Texas Instruments

2396 6.52
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CSD19506KTTT

Datenblatt

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active N-Channel MOSFET (Metal Oxide) 80 V 200A (Ta) 6V, 10V 2.3mOhm @ 100A, 10V 3.2V @ 250µA 156 nC @ 10 V ±20V 12200 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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