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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHB23N60E-GE3

SIHB23N60E-GE3

MOSFET N-CH 600V 23A D2PAK

Vishay Siliconix

3653 4.11
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SIHB23N60E-GE3

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 158mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±30V 2418 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP80NF55-06

STP80NF55-06

MOSFET N-CH 55V 80A TO220AB

STMicroelectronics

3796 4.11
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STP80NF55-06

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Tube STripFET™ II Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 6.5mOhm @ 40A, 10V 4V @ 250µA 189 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK10E60W,S1VX

TK10E60W,S1VX

MOSFET N-CH 600V 9.7A TO220

Toshiba Semiconductor and Storage

2204 2.92
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TK10E60W,S1VX

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Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 380mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V Super Junction 100W (Tc) 150°C (TJ) Through Hole
TSM80N1R2CP ROG

TSM80N1R2CP ROG

MOSFET N-CH 800V 5.5A TO252

Taiwan Semiconductor Corporation

3635 5.69
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TSM80N1R2CP ROG

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 800 V 5.5A (Tc) 10V 1.2Ohm @ 2.75A, 10V 4V @ 250µA 19.4 nC @ 10 V ±30V 685 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFP7530PBF

IRFP7530PBF

MOSFET N-CH 60V 195A TO247

Infineon Technologies

3561 4.13
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IRFP7530PBF

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Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 6V, 10V 2mOhm @ 100A, 10V 3.7V @ 250µA 411 nC @ 10 V ±20V 13703 pF @ 25 V - 341W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA200N055T2

IXTA200N055T2

MOSFET N-CH 55V 200A TO263

IXYS

2901 4.14
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IXTA200N055T2

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Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 200A (Tc) 10V 4.2mOhm @ 50A, 10V 4V @ 250µA 109 nC @ 10 V ±20V 6800 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STP80NF10FP

STP80NF10FP

MOSFET N-CH 100V 38A TO220FP

STMicroelectronics

3821 4.16
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STP80NF10FP

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Tube STripFET™ II Active N-Channel MOSFET (Metal Oxide) 100 V 38A (Tc) 10V 15mOhm @ 40A, 10V 4V @ 250µA 189 nC @ 10 V ±20V 4300 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFA4N100P

IXFA4N100P

MOSFET N-CH 1000V 4A TO263

IXYS

2401 4.16
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IXFA4N100P

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Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 4A (Tc) 10V 3.3Ohm @ 2A, 10V 5V @ 250µA 26 nC @ 10 V ±20V 1456 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK100A10N1,S4X

TK100A10N1,S4X

MOSFET N-CH 100V 100A TO220SIS

Toshiba Semiconductor and Storage

3287 4.17
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TK100A10N1,S4X

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Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 3.8mOhm @ 50A, 10V 4V @ 1mA 140 nC @ 10 V ±20V 8800 pF @ 50 V - 45W (Tc) 150°C (TJ) Through Hole
IPP60R170CFD7XKSA1

IPP60R170CFD7XKSA1

MOSFET N-CH 650V 14A TO220-3

Infineon Technologies

2605 4.18
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IPP60R170CFD7XKSA1

Datenblatt

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) 10V 170mOhm @ 6A, 10V 4.5V @ 300µA 28 nC @ 10 V ±20V 1199 pF @ 400 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R170CFD7XKSA1

IPA60R170CFD7XKSA1

MOSFET N-CH 650V 8A TO220

Infineon Technologies

2545 1.00
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IPA60R170CFD7XKSA1

Datenblatt

Bulk,Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Tc) 10V 170mOhm @ 6A, 10V 4.5V @ 300µA 28 nC @ 10 V ±20V 1199 pF @ 400 V - 26W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP120P04P4L03AKSA1

IPP120P04P4L03AKSA1

MOSFET P-CH 40V 120A TO220-3

Infineon Technologies

3521 4.19
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IPP120P04P4L03AKSA1

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Tube Automotive, AEC-Q101, OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 3.4mOhm @ 100A, 10V 2.2V @ 340µA 234 nC @ 10 V ±16V 15000 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP120P04P4L03AKSA2

IPP120P04P4L03AKSA2

MOSFET P-CH 40V 120A TO220-3

Infineon Technologies

3971 4.19
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IPP120P04P4L03AKSA2

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Tube OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 3.4mOhm @ 100A, 10V 2.2V @ 340µA 234 nC @ 10 V +5V, -16V 15000 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK25E60X,S1X

TK25E60X,S1X

MOSFET N-CH 600V 25A TO220

Toshiba Semiconductor and Storage

3839 4.20
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TK25E60X,S1X

Datenblatt

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 125mOhm @ 7.5A, 10V 3.5V @ 1.2mA 40 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C (TJ) Through Hole
STP22NM60N

STP22NM60N

MOSFET N-CH 600V 16A TO220AB

STMicroelectronics

3289 4.22
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STP22NM60N

Datenblatt

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 220mOhm @ 8A, 10V 4V @ 100µA 44 nC @ 10 V ±30V 1300 pF @ 50 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHF22N60E-GE3

SIHF22N60E-GE3

MOSFET N-CH 600V 21A TO220

Vishay Siliconix

2535 4.23
- +

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SIHF22N60E-GE3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1920 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R190C6XKSA1

IPA60R190C6XKSA1

MOSFET N-CH 600V 20.2A TO220-FP

Infineon Technologies

2807 1.00
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IPA60R190C6XKSA1

Datenblatt

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 9.5A, 10V 3.5V @ 630µA 63 nC @ 10 V ±20V 1400 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA80R280P7XKSA1

IPA80R280P7XKSA1

MOSFET N-CH 800V 17A TO220-3F

Infineon Technologies

2430 4.25
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IPA80R280P7XKSA1

Datenblatt

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 280mOhm @ 7.2A, 10V 3.5V @ 360µA 36 nC @ 10 V ±20V 1200 pF @ 500 V Super Junction 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP80R280P7XKSA1

IPP80R280P7XKSA1

MOSFET N-CH 800V 17A TO220-3

Infineon Technologies

3730 1.00
- +

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Немедленный

IPP80R280P7XKSA1

Datenblatt

Bulk,Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 280mOhm @ 7.2A, 10V 3.5V @ 360µA 36 nC @ 10 V ±20V 1200 pF @ 500 V Super Junction 101W (Tc) -55°C ~ 150°C (TJ) Through Hole
STB40N60M2

STB40N60M2

MOSFET N-CH 600V 34A D2PAK

STMicroelectronics

3360 7.12
- +

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STB40N60M2

Datenblatt

Tape & Reel (TR),Cut Tape (CT) MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 88mOhm @ 17A, 10V 4V @ 250µA 57 nC @ 10 V ±25V 2500 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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