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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RFP12N10L

RFP12N10L

MOSFET N-CH 100V 12A TO220-3

onsemi

394 1.31
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RFP12N10L

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Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 5V 200mOhm @ 12A, 5V 2V @ 250µA - ±10V 900 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOT8N50

AOT8N50

MOSFET N-CH 500V 8A TO220

Alpha & Omega Semiconductor Inc.

3964 1.31
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AOT8N50

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Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4A, 10V 4.5V @ 250µA 28 nC @ 10 V ±30V 1042 pF @ 25 V - 192W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISC012N04NM6ATMA1

ISC012N04NM6ATMA1

TRENCH <= 40V PG-TDSON-8

Infineon Technologies

8387 2.66
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ISC012N04NM6ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 36A (Ta), 232A (Tc) 6V, 10V 1.2mOhm @ 50A, 10V 2.8V @ 747µA 64 nC @ 10 V ±20V 4600 pF @ 20 V - 3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RS3E180ATTB1

RS3E180ATTB1

MOSFET P-CH 30V 18A 8SOP

Rohm Semiconductor

4725 2.88
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RS3E180ATTB1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 18A (Ta) 4.5V, 10V 5.4mOhm @ 18A, 10V 2.5V @ 5mA 160 nC @ 10 V ±20V 7200 pF @ 15 V - 1.4W (Ta) 150°C (TJ) Surface Mount
IRFB3806PBF

IRFB3806PBF

MOSFET N-CH 60V 43A TO220AB

Infineon Technologies

1890 1.33
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IRFB3806PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK10P60W,RVQ

TK10P60W,RVQ

MOSFET N CH 600V 9.7A DPAK

Toshiba Semiconductor and Storage

11087 2.89
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TK10P60W,RVQ

Datenblatt

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 430mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V Super Junction 80W (Tc) 150°C (TJ) Surface Mount
FDB390N15A

FDB390N15A

MOSFET N-CH 150V 27A D2PAK

onsemi

4724 2.26
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FDB390N15A

Datenblatt

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 27A (Tc) 10V 39mOhm @ 27A, 10V 4V @ 250µA 18.6 nC @ 10 V ±20V 1285 pF @ 75 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ14PBF

IRFZ14PBF

MOSFET N-CH 60V 10A TO220AB

Vishay Siliconix

11860 1.35
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IRFZ14PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 10V 200mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9520PBF

IRF9520PBF

MOSFET P-CH 100V 6.8A TO220AB

Vishay Siliconix

1571 1.35
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IRF9520PBF

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 10V 600mOhm @ 4.1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9Z14PBF

IRF9Z14PBF

MOSFET P-CH 60V 6.7A TO220AB

Vishay Siliconix

602 1.35
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IRF9Z14PBF

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) 10V 500mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFIZ24NPBF

IRFIZ24NPBF

MOSFET N-CH 55V 14A TO220AB FP

Infineon Technologies

8601 1.44
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IRFIZ24NPBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 14A (Tc) 10V 70mOhm @ 7.8A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 29W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP2N80K5

STP2N80K5

MOSFET N-CH 800V 2A TO220

STMicroelectronics

1693 1.44
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STP2N80K5

Datenblatt

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 4.5Ohm @ 1A, 10V 5V @ 100µA 3 nC @ 10 V 30V 95 pF @ 100 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD210PBF

IRFD210PBF

MOSFET N-CH 200V 600MA 4DIP

Vishay Siliconix

12239 1.45
- +

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IRFD210PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 600mA (Ta) 10V 1.5Ohm @ 360mA, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
IRFD120PBF

IRFD120PBF

MOSFET N-CH 100V 1.3A 4DIP

Vishay Siliconix

3380 1.45
- +

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IRFD120PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 1.3A (Ta) 10V 270mOhm @ 780mA, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
BSC0805LSATMA1

BSC0805LSATMA1

MOSFET N-CH 100V 79A TDSON-8-6

Infineon Technologies

4062 2.73
- +

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BSC0805LSATMA1

Datenblatt

Cut Tape (CT) OptiMOS™ 5 Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 79A (Tc) 4.5V, 10V 7mOhm @ 40A, 10V 2.3V @ 49µA 20 nC @ 4.5 V ±20V 2700 pF @ 50 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STL3NM60N

STL3NM60N

MOSFET N-CH 600V 0.65A POWERFLAT

STMicroelectronics

8916 2.51
- +

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STL3NM60N

Datenblatt

Tape & Reel (TR),Cut Tape (CT) MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 650mA (Ta), 2.2A (Tc) 10V 1.8Ohm @ 1A, 10V 4V @ 250µA 9.5 nC @ 10 V ±25V 188 pF @ 50 V - 2W (Ta), 22W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ010NE2LS5ATMA1

BSZ010NE2LS5ATMA1

MOSFET N-CH 25V 32A/40A TSDSON

Infineon Technologies

6836 2.79
- +

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Немедленный

BSZ010NE2LS5ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 25 V 32A (Ta), 40A (Tc) 4.5V, 10V 1mOhm @ 20A, 10V 2V @ 250µA 29 nC @ 4.5 V ±16V 3900 pF @ 12 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFB7546PBF

IRFB7546PBF

MOSFET N-CH 60V 75A TO220AB

Infineon Technologies

5222 1.37
- +

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IRFB7546PBF

Datenblatt

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 6V, 10V 7.3mOhm @ 45A, 10V 3.7V @ 100µA 87 nC @ 10 V ±20V 3000 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR9210PBF

IRFR9210PBF

MOSFET P-CH 200V 1.9A DPAK

Vishay Siliconix

1498 1.41
- +

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Немедленный

IRFR9210PBF

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 1.9A (Tc) 10V 3Ohm @ 1.1A, 10V 4V @ 250µA 8.9 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4423DY-T1-E3

SI4423DY-T1-E3

MOSFET P-CH 20V 10A 8SO

Vishay Siliconix

3579 2.79
- +

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Немедленный

SI4423DY-T1-E3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 10A (Ta) 1.8V, 4.5V 7.5mOhm @ 14A, 4.5V 900mV @ 600µA 175 nC @ 5 V ±8V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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