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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSC072N08NS5ATMA1

BSC072N08NS5ATMA1

MOSFET N-CH 80V 74A TDSON

Infineon Technologies

32505 2.09
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BSC072N08NS5ATMA1

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Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 74A (Tc) 6V, 10V 7.2mOhm @ 37A, 10V 3.8V @ 36µA 29 nC @ 10 V ±20V 2100 pF @ 40 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD60N10S4L12ATMA1

IPD60N10S4L12ATMA1

MOSFET N-CH 100V 60A TO252-3

Infineon Technologies

87473 2.14
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IPD60N10S4L12ATMA1

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Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 4.5V, 10V 12mOhm @ 60A, 10V 2.1V @ 46µA 49 nC @ 10 V ±16V 3170 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU120NPBF

IRFU120NPBF

MOSFET N-CH 100V 9.4A IPAK

Infineon Technologies

8562 1.06
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IRFU120NPBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 9.4A (Tc) 10V 210mOhm @ 5.6A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDMS86322

FDMS86322

MOSFET N-CH 80V 13A/60A 8PQFN

onsemi

3110 2.33
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FDMS86322

Datenblatt

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 13A (Ta), 60A (Tc) 6V, 10V 7.65mOhm @ 13A, 10V 4V @ 250µA 55 nC @ 10 V ±20V 3000 pF @ 50 V - 2.5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR404DP-T1-GE3

SIR404DP-T1-GE3

MOSFET N-CH 20V 60A PPAK SO-8

Vishay Siliconix

14457 2.11
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SIR404DP-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 2.5V, 10V 1.6mOhm @ 20A, 10V 1.5V @ 250µA 97 nC @ 4.5 V ±12V 8130 pF @ 10 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL520NPBF

IRL520NPBF

MOSFET N-CH 100V 10A TO220AB

Infineon Technologies

12649 1.08
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IRL520NPBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4V, 10V 180mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU120NPBF

IRLU120NPBF

MOSFET N-CH 100V 10A IPAK

Infineon Technologies

2355 1.08
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IRLU120NPBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4V, 10V 185mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ34NPBF

IRFZ34NPBF

MOSFET N-CH 55V 29A TO220AB

Infineon Technologies

6690 1.09
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IRFZ34NPBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF630NPBF

IRF630NPBF

MOSFET N-CH 200V 9.3A TO220AB

Infineon Technologies

12714 1.10
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IRF630NPBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 9.3A (Tc) 10V 300mOhm @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 575 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU220NPBF

IRFU220NPBF

MOSFET N-CH 200V 5A IPAK

Infineon Technologies

6792 1.12
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IRFU220NPBF

Datenblatt

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 5A (Tc) 10V 600mOhm @ 2.9A, 10V 4V @ 250µA 23 nC @ 10 V ±20V 300 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSO301SPHXUMA1

BSO301SPHXUMA1

MOSFET P-CH 30V 12.6A 8DSO

Infineon Technologies

1132 2.29
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BSO301SPHXUMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 12.6A (Ta) 4.5V, 10V 8mOhm @ 14.9A, 10V 2V @ 250µA 136 nC @ 10 V ±20V 5890 pF @ 25 V - 1.79W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFH5215TRPBF

IRFH5215TRPBF

MOSFET N-CH 150V 5A/27A PQFN

Infineon Technologies

6232 2.30
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IRFH5215TRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 5A (Ta), 27A (Tc) 10V 58mOhm @ 16A, 10V 5V @ 100µA 32 nC @ 10 V ±20V 1350 pF @ 50 V - 3.6W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF6668TRPBF

IRF6668TRPBF

MOSFET N-CH 80V 55A DIRECTFET MZ

Infineon Technologies

31000 2.32
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IRF6668TRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 80 V 55A (Tc) 10V 15mOhm @ 12A, 10V 4.9V @ 100µA 31 nC @ 10 V ±20V 1320 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF1010ESTRLPBF

IRF1010ESTRLPBF

MOSFET N-CH 60V 84A D2PAK

Infineon Technologies

2886 1.93
- +

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Немедленный

IRF1010ESTRLPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 84A (Tc) 10V 12mOhm @ 50A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3210 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ14PBF

IRLZ14PBF

MOSFET N-CH 60V 10A TO220AB

Vishay Siliconix

6423 1.16
- +

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Немедленный

IRLZ14PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 4V, 5V 200mOhm @ 6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
STD1NK60-1

STD1NK60-1

MOSFET N-CH 600V 1A IPAK

STMicroelectronics

5920 1.16
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STD1NK60-1

Datenblatt

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 600 V 1A (Tc) 10V 8.5Ohm @ 500mA, 10V 3.7V @ 250µA 10 nC @ 10 V ±30V 156 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9510PBF

IRF9510PBF

MOSFET P-CH 100V 4A TO220AB

Vishay Siliconix

3353 1.16
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Немедленный

IRF9510PBF

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 4A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF710PBF

IRF710PBF

MOSFET N-CH 400V 2A TO220AB

Vishay Siliconix

2957 1.16
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Немедленный

IRF710PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.6Ohm @ 1.2A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 170 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9510PBF-BE3

IRF9510PBF-BE3

MOSFET P-CH 100V 4A TO220AB

Vishay Siliconix

1762 1.16
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Немедленный

IRF9510PBF-BE3

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 4A (Tc) - 1.2Ohm @ 2.4A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQU13N06LTU-WS

FQU13N06LTU-WS

MOSFET N-CH 60V 11A IPAK

onsemi

30190 1.17
- +

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FQU13N06LTU-WS

Datenblatt

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 11A (Tc) 5V, 10V 115mOhm @ 5.5A, 10V 2.5V @ 250µA 6.4 nC @ 5 V ±20V 350 pF @ 25 V - 2.5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
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