Добро пожаловать Element Technology Co., Ltd.!

+86 15361839241 +86 0755-23603516
Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQB1P50TM

FQB1P50TM

MOSFET P-CH 500V 1.5A D2PAK

onsemi

1496 1.54
- +

Добавить

Немедленный

FQB1P50TM

Datenblatt

Tape & Reel (TR),Cut Tape (CT) QFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 500 V 1.5A (Tc) 10V 10.5Ohm @ 750mA, 10V 5V @ 250µA 14 nC @ 10 V ±30V 350 pF @ 25 V - 3.13W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMS7660AS

FDMS7660AS

MOSFET N-CH 30V 26A/42A 8PQFN

onsemi

7875 1.73
- +

Добавить

Немедленный

FDMS7660AS

Datenblatt

Tape & Reel (TR),Cut Tape (CT) PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 26A (Ta), 42A (Tc) 4.5V, 10V 2.4mOhm @ 25A, 10V 3V @ 1mA 90 nC @ 10 V ±20V 6120 pF @ 15 V - 2.5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RFD16N06LESM9A

RFD16N06LESM9A

MOSFET N-CH 60V 16A TO252AA

onsemi

3686 1.96
- +

Добавить

Немедленный

RFD16N06LESM9A

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 16A (Tc) 5V 47mOhm @ 16A, 5V 3V @ 250µA 62 nC @ 10 V +10V, -8V 1350 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
CSD17578Q5AT

CSD17578Q5AT

MOSFET N-CH 30V 25A 8VSON

Texas Instruments

2160 1.43
- +

Добавить

Немедленный

CSD17578Q5AT

Datenblatt

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 25A (Ta) 4.5V, 10V 6.9mOhm @ 10A, 10V 1.9V @ 250µA 22.3 nC @ 10 V ±20V 1510 pF @ 15 V - 3.1W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7114DN-T1-E3

SI7114DN-T1-E3

MOSFET N-CH 30V 11.7A PPAK1212-8

Vishay Siliconix

15247 1.83
- +

Добавить

Немедленный

SI7114DN-T1-E3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 11.7A (Ta) 4.5V, 10V 7.5mOhm @ 18.3A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
CSD22206WT

CSD22206WT

MOSFET P-CH 8V 5A 9DSBGA

Texas Instruments

15456 1.44
- +

Добавить

Немедленный

CSD22206WT

Datenblatt

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active P-Channel MOSFET (Metal Oxide) 8 V 5A (Ta) 2.5V, 4.5V 5.7mOhm @ 2A, 4.5V 1.05V @ 250µA 14.6 nC @ 4.5 V -6V 2275 pF @ 4 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLZ34NSTRLPBF

IRLZ34NSTRLPBF

MOSFET N-CH 55V 30A D2PAK

Infineon Technologies

74828 1.63
- +

Добавить

Немедленный

IRLZ34NSTRLPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 4V, 10V 35mOhm @ 16A, 10V 2V @ 250µA 25 nC @ 5 V ±16V 880 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9Z24NPBF

IRF9Z24NPBF

MOSFET P-CH 55V 12A TO220AB

Infineon Technologies

10688 0.94
- +

Добавить

Немедленный

IRF9Z24NPBF

Datenblatt

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 12A (Tc) 10V 175mOhm @ 7.2A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9675-100A,118

BUK9675-100A,118

MOSFET N-CH 100V 23A D2PAK

Nexperia USA Inc.

5584 1.64
- +

Добавить

Немедленный

BUK9675-100A,118

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 5V, 10V 72mOhm @ 10A, 10V 2V @ 1mA - ±15V 1704 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DN2535N3-G

DN2535N3-G

MOSFET N-CH 350V 120MA TO92

Microchip Technology

1430 0.95
- +

Добавить

Немедленный

DN2535N3-G

Datenblatt

Bag - Active N-Channel MOSFET (Metal Oxide) 350 V 120mA (Tj) 0V 25Ohm @ 120mA, 0V - - ±20V 300 pF @ 25 V Depletion Mode 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQU5P20TU

FQU5P20TU

MOSFET P-CH 200V 3.7A IPAK

onsemi

8553 0.96
- +

Добавить

Немедленный

FQU5P20TU

Datenblatt

Tube QFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 200 V 3.7A (Tc) 10V 1.4Ohm @ 1.85A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 430 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPD04N50C3ATMA1

SPD04N50C3ATMA1

MOSFET N-CH 500V 4.5A TO252-3

Infineon Technologies

7890 1.96
- +

Добавить

Немедленный

SPD04N50C3ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 22 nC @ 10 V ±20V 470 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM230N06CP ROG

TSM230N06CP ROG

MOSFET N-CHANNEL 60V 34A TO252

Taiwan Semiconductor Corporation

59800 2.10
- +

Добавить

Немедленный

TSM230N06CP ROG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 34A (Tc) 4.5V, 10V 23mOhm @ 20A, 10V 2.5V @ 250µA 28 nC @ 10 V ±20V 1680 pF @ 25 V - 104W (Tc) 150°C (TJ) Surface Mount
FQU13N06LTU

FQU13N06LTU

MOSFET N-CH 60V 11A IPAK

onsemi

9108 0.98
- +

Добавить

Немедленный

FQU13N06LTU

Datenblatt

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 11A (Tc) 5V, 10V 115mOhm @ 5.5A, 10V 2.5V @ 250µA 6.4 nC @ 5 V ±20V 350 pF @ 25 V - 2.5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD50R280CEAUMA1

IPD50R280CEAUMA1

MOSFET N-CH 550V 13A TO252

Infineon Technologies

3574 2.02
- +

Добавить

Немедленный

IPD50R280CEAUMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 550 V 13A (Ta) 13V 280mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6 nC @ 10 V ±20V 773 pF @ 100 V - 119W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR4104TRPBF

IRFR4104TRPBF

MOSFET N-CH 40V 42A DPAK

Infineon Technologies

15448 2.03
- +

Добавить

Немедленный

IRFR4104TRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU024NPBF

IRLU024NPBF

MOSFET N-CH 55V 17A IPAK

Infineon Technologies

2947 1.01
- +

Добавить

Немедленный

IRLU024NPBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 4V, 10V 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
DN2540N3-G

DN2540N3-G

MOSFET N-CH 400V 120MA TO92

Microchip Technology

1760 1.01
- +

Добавить

Немедленный

DN2540N3-G

Datenblatt

Bag - Active N-Channel MOSFET (Metal Oxide) 400 V 120mA (Tj) 0V 25Ohm @ 120mA, 0V - - ±20V 300 pF @ 25 V Depletion Mode 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLZ24NPBF

IRLZ24NPBF

MOSFET N-CH 55V 18A TO220AB

Infineon Technologies

18506 1.02
- +

Добавить

Немедленный

IRLZ24NPBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 4V, 10V 60mOhm @ 11A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
MCU28P10Y-TP

MCU28P10Y-TP

P-CHANNEL MOSFET,DPAK

Micro Commercial Co

4700 2.21
- +

Добавить

Немедленный

MCU28P10Y-TP

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 100 V 28A 4.5V, 10V 52mOhm @ 15A, 10V 2.5V @ 250µA 40 nC @ 10 V ±20V 2100 pF @ 50 V - 96W (Tj) -55°C ~ 150°C (TJ) Surface Mount
Total 42446 Records«Prev1... 6263646566676869...2123Next»
Запрос котировок
Номер запчасти
А
Связь
Электронная почта
Замечания
  • Домой

    Домой

    Продукты

    Продукты

    Телефон

    Телефон

    Пользователи

    Пользователи