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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPW60R040C7XKSA1

IPW60R040C7XKSA1

MOSFET N-CH 600V 50A TO247-3

Infineon Technologies

2311 16.24
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IPW60R040C7XKSA1

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Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 40mOhm @ 24.9A, 10V 4V @ 1.24mA 107 nC @ 10 V ±20V 4340 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH30N60L2

IXTH30N60L2

MOSFET N-CH 600V 30A TO247

IXYS

916 19.77
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IXTH30N60L2

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Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 240mOhm @ 15A, 10V 4.5V @ 250µA 335 nC @ 10 V ±20V 10700 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPW47N60C3FKSA1

SPW47N60C3FKSA1

MOSFET N-CH 650V 47A TO247-3

Infineon Technologies

615 20.15
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SPW47N60C3FKSA1

Datenblatt

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 47A (Tc) 10V 70mOhm @ 30A, 10V 3.9V @ 2.7mA 320 nC @ 10 V ±20V 6800 pF @ 25 V - 415W (Tc) -55°C ~ 150°C (TJ) Through Hole
UF3C065030K4S

UF3C065030K4S

MOSFET N-CH 650V 85A TO247-4

UnitedSiC

1988 20.16
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UF3C065030K4S

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Tube - Active N-Channel - 650 V 85A (Tc) 12V 35mOhm @ 50A, 12V 6V @ 10mA 43 nC @ 12 V ±25V 1500 pF @ 100 V - 441W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH16N120P

IXFH16N120P

MOSFET N-CH 1200V 16A TO247AD

IXYS

680 20.83
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IXFH16N120P

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Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 16A (Tc) 10V 950mOhm @ 8A, 10V 6.5V @ 1mA 120 nC @ 10 V ±30V 6900 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) Through Hole
LSIC1MO120E0080

LSIC1MO120E0080

SICFET N-CH 1200V 39A TO247-3

Littelfuse Inc.

791 21.27
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LSIC1MO120E0080

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Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 39A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 95 nC @ 20 V +22V, -6V 1825 pF @ 800 V - 179W (Tc) -55°C ~ 150°C Through Hole
IXTT80N20L

IXTT80N20L

MOSFET N-CH 200V 80A TO268

IXYS

580 21.76
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IXTT80N20L

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Tube Linear Active N-Channel MOSFET (Metal Oxide) 200 V 80A (Tc) 10V 32mOhm @ 40A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 6160 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFK44N80P

IXFK44N80P

MOSFET N-CH 800V 44A TO264AA

IXYS

600 22.47
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IXFK44N80P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 44A (Tc) 10V 190mOhm @ 22A, 10V 5V @ 8mA 198 nC @ 10 V ±30V 12000 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTX32P60P

IXTX32P60P

MOSFET P-CH 600V 32A PLUS247-3

IXYS

298 22.60
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IXTX32P60P

Datenblatt

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 350mOhm @ 16A, 10V 4V @ 1mA 196 nC @ 10 V ±20V 11100 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT220N20X3HV

IXFT220N20X3HV

MOSFET N-CH 200V 220A TO268HV

IXYS

1696 22.82
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IXFT220N20X3HV

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Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 220A (Tc) 10V 6.2mOhm @ 110A, 10V 4.5V @ 4mA 204 nC @ 10 V ±20V 13600 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTK90P20P

IXTK90P20P

MOSFET P-CH 200V 90A TO264

IXYS

3555 22.82
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IXTK90P20P

Datenblatt

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 10V 44mOhm @ 500mA, 10V 4V @ 1mA 205 nC @ 10 V ±20V 12000 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTR170P10P

IXTR170P10P

MOSFET P-CH 100V 108A ISOPLUS247

IXYS

1119 22.84
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IXTR170P10P

Datenblatt

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 100 V 108A (Tc) 10V 13mOhm @ 85A, 10V 4V @ 1mA 240 nC @ 10 V ±20V 12600 pF @ 25 V - 312W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK240N15T2

IXFK240N15T2

MOSFET N-CH 150V 240A TO264AA

IXYS

126 22.92
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IXFK240N15T2

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Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 150 V 240A (Tc) 10V 5.2mOhm @ 60A, 10V 5V @ 8mA 460 nC @ 10 V ±20V 32000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
DMN6069SE-13

DMN6069SE-13

MOSFET N-CH 60V 4.3A/10A SOT223

Diodes Incorporated

5000 0.57
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DMN6069SE-13

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Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 4.3A (Ta), 10A (Tc) 4.5V, 10V 69mOhm @ 3A, 10V 3V @ 250µA 16 nC @ 10 V ±20V 825 pF @ 30 V - 2.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AOSP32320C

AOSP32320C

MOSFET N-CH 30V 8.5A 8SOIC

Alpha & Omega Semiconductor Inc.

24869 0.57
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AOSP32320C

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 8.5A (Ta) 4.5V, 10V 22mOhm @ 8.5A, 10V 2.3V @ 250µA 20 nC @ 10 V ±20V 650 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
2SJ305TE85LF

2SJ305TE85LF

MOSFET P-CH 30V 200MA SC59

Toshiba Semiconductor and Storage

13746 0.57
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2SJ305TE85LF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 200mA (Ta) 2.5V 4Ohm @ 50mA, 2.5V - - ±20V 92 pF @ 3 V - 200mW (Ta) 150°C (TJ) Surface Mount
DMN3016LSS-13

DMN3016LSS-13

MOSFET N-CH 30V 10.3A 8SO

Diodes Incorporated

5659 0.57
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DMN3016LSS-13

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 10.3A (Ta) 4.5V, 10V 12mOhm @ 12A, 10V 2.5V @ 250µA 25.1 nC @ 10 V ±20V 1415 pF @ 15 V - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPW60R045CPFKSA1

IPW60R045CPFKSA1

MOSFET N-CH 650V 60A TO247-3

Infineon Technologies

117 23.48
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IPW60R045CPFKSA1

Datenblatt

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 60A (Tc) 10V 45mOhm @ 44A, 10V 3.5V @ 3mA 190 nC @ 10 V ±20V 6800 pF @ 100 V - 431W (Tc) -55°C ~ 150°C (TJ) Through Hole
MMIX1F520N075T2

MMIX1F520N075T2

MOSFET N-CH 75V 500A 24SMPD

IXYS

3504 23.81
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MMIX1F520N075T2

Datenblatt

Tube GigaMOS™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 500A (Tc) 10V 1.6mOhm @ 100A, 10V 5V @ 8mA 545 nC @ 10 V ±20V 41000 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) Surface Mount
G3R30MT12K

G3R30MT12K

SIC MOSFET N-CH 90A TO247-4

GeneSiC Semiconductor

2828 23.88
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G3R30MT12K

Datenblatt

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 90A (Tc) 15V 36mOhm @ 50A, 15V 2.69V @ 12mA 155 nC @ 15 V ±15V 3901 pF @ 800 V - 400W (Tc) -55°C ~ 175°C (TJ) Through Hole
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