Добро пожаловать Element Technology Co., Ltd.!

+86 15361839241 +86 0755-23603516
Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPP11N80C3XKSA1

SPP11N80C3XKSA1

MOSFET N-CH 800V 11A TO220-3

Infineon Technologies

4995 3.76
- +

Добавить

Немедленный

SPP11N80C3XKSA1

Datenblatt

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 450mOhm @ 7.1A, 10V 3.9V @ 680µA 85 nC @ 10 V ±20V 1600 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB7530PBF

IRFB7530PBF

MOSFET N-CH 60V 195A TO220AB

Infineon Technologies

6779 3.86
- +

Добавить

Немедленный

IRFB7530PBF

Datenblatt

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 6V, 10V 2mOhm @ 100A, 10V 3.7V @ 250µA 411 nC @ 10 V ±20V 13703 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB7730PBF

IRFB7730PBF

MOSFET N-CH 75V 195A TO220AB

Infineon Technologies

352 3.86
- +

Добавить

Немедленный

IRFB7730PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 195A (Tc) 6V, 10V 2.6mOhm @ 100A, 10V 3.7V @ 250µA 407 nC @ 10 V ±20V 13660 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPB20N60C3ATMA1

SPB20N60C3ATMA1

MOSFET N-CH 650V 20.7A TO263-3

Infineon Technologies

919 7.20
- +

Добавить

Немедленный

SPB20N60C3ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 20.7A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AOTL66912

AOTL66912

MOSFET N-CH 100V 49A/380A TOLLA

Alpha & Omega Semiconductor Inc.

1960 7.16
- +

Добавить

Немедленный

Tape & Reel (TR),Cut Tape (CT) AlphaSGT™ Active N-Channel MOSFET (Metal Oxide) 100 V 49A (Ta), 380A (Tc) 6V, 10V 1.7mOhm @ 20A, 10V 3.5V @ 250µA 220 nC @ 10 V ±20V 12500 pF @ 50 V - 8.3W (Ta), 500W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB020NE7N3GATMA1

IPB020NE7N3GATMA1

MOSFET N-CH 75V 120A D2PAK

Infineon Technologies

2620 7.63
- +

Добавить

Немедленный

IPB020NE7N3GATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 2mOhm @ 100A, 10V 3.8V @ 273µA 206 nC @ 10 V ±20V 14400 pF @ 37.5 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOT27S60L

AOT27S60L

MOSFET N-CH 600V 27A TO220

Alpha & Omega Semiconductor Inc.

3584 4.20
- +

Добавить

Немедленный

AOT27S60L

Datenblatt

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 27A (Tc) 10V 160mOhm @ 13.5A, 10V 4V @ 250µA 26 nC @ 10 V ±30V 1294 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB80R290C3AATMA2

IPB80R290C3AATMA2

MOSFET N-CH 800V 17A TO263-3

Infineon Technologies

3000 7.29
- +

Добавить

Немедленный

IPB80R290C3AATMA2

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 290mOhm @ 11A, 10V 3.9V @ 1mA 117 nC @ 10 V ±20V 2300 pF @ 100 V - 227W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFP260NPBF

IRFP260NPBF

MOSFET N-CH 200V 50A TO247AC

Infineon Technologies

7677 4.42
- +

Добавить

Немедленный

IRFP260NPBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 50A (Tc) 10V 40mOhm @ 28A, 10V 4V @ 250µA 234 nC @ 10 V ±20V 4057 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4310ZPBF

IRFB4310ZPBF

MOSFET N-CH 100V 120A TO220AB

Infineon Technologies

7819 4.15
- +

Добавить

Немедленный

IRFB4310ZPBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 6mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6860 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI4110GPBF

IRFI4110GPBF

MOSFET N-CH 100V 72A TO220AB FP

Infineon Technologies

33499 4.57
- +

Добавить

Немедленный

IRFI4110GPBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 72A (Tc) 10V 4.5mOhm @ 43A, 10V 4V @ 250µA 290 nC @ 10 V ±20V 9540 pF @ 50 V - 61W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP7430PBF

IRFP7430PBF

MOSFET N-CH 40V 195A TO247AC

Infineon Technologies

1091 4.58
- +

Добавить

Немедленный

IRFP7430PBF

Datenblatt

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.3mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 14240 pF @ 25 V - 366W (Tc) -55°C ~ 175°C (TJ) Through Hole
IAUS300N08S5N012TATMA1

IAUS300N08S5N012TATMA1

MOSFET N-CH 80V 300A HDSOP-16-2

Infineon Technologies

3274 7.78
- +

Добавить

Немедленный

IAUS300N08S5N012TATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 80 V 300A (Tj) 6V, 10V 1.2mOhm @ 100A, 10V 3.8V @ 275µA 231 nC @ 10 V ±20V 16250 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF4905STRL

AUIRF4905STRL

MOSFET P-CH 55V 42A D2PAK

Infineon Technologies

705 7.66
- +

Добавить

Немедленный

AUIRF4905STRL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 20mOhm @ 42A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3500 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN3R3-80PS,127

PSMN3R3-80PS,127

MOSFET N-CH 80V 120A TO220AB

Nexperia USA Inc.

3186 4.86
- +

Добавить

Немедленный

PSMN3R3-80PS,127

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 3.3mOhm @ 25A, 10V 4V @ 1mA 139 nC @ 10 V ±20V 9961 pF @ 40 V - 338W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP80P06PHXKSA1

SPP80P06PHXKSA1

MOSFET P-CH 60V 80A TO220-3

Infineon Technologies

3646 4.49
- +

Добавить

Немедленный

SPP80P06PHXKSA1

Datenblatt

Tube SIPMOS® Active P-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 23mOhm @ 64A, 10V 4V @ 5.5mA 173 nC @ 10 V ±20V 5033 pF @ 25 V - 340W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLB3036PBF

IRLB3036PBF

MOSFET N-CH 60V 195A TO220AB

Infineon Technologies

37437 4.92
- +

Добавить

Немедленный

IRLB3036PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 2.4mOhm @ 165A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11210 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ3C065080B3

UJ3C065080B3

MOSFET N-CH 650V 25A TO263

UnitedSiC

5390 7.92
- +

Добавить

Немедленный

UJ3C065080B3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel - 650 V 25A (Tc) 12V 111mOhm @ 20A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLB4030PBF

IRLB4030PBF

MOSFET N-CH 100V 180A TO220AB

Infineon Technologies

13775 5.17
- +

Добавить

Немедленный

IRLB4030PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 4.5V, 10V 4.3mOhm @ 110A, 10V 2.5V @ 250µA 130 nC @ 4.5 V ±16V 11360 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP360PBF

IRFP360PBF

MOSFET N-CH 400V 23A TO247-3

Vishay Siliconix

4792 5.31
- +

Добавить

Немедленный

IRFP360PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 23A (Tc) 10V 200mOhm @ 14A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 4500 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 42446 Records«Prev1... 3031323334353637...2123Next»
Запрос котировок
Номер запчасти
А
Связь
Электронная почта
Замечания
  • Домой

    Домой

    Продукты

    Продукты

    Телефон

    Телефон

    Пользователи

    Пользователи