Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SPP11N80C3XKSA1MOSFET N-CH 800V 11A TO220-3 |
4995 | 3.76 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 11A (Tc) | 10V | 450mOhm @ 7.1A, 10V | 3.9V @ 680µA | 85 nC @ 10 V | ±20V | 1600 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFB7530PBFMOSFET N-CH 60V 195A TO220AB |
6779 | 3.86 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 411 nC @ 10 V | ±20V | 13703 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFB7730PBFMOSFET N-CH 75V 195A TO220AB |
352 | 3.86 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 195A (Tc) | 6V, 10V | 2.6mOhm @ 100A, 10V | 3.7V @ 250µA | 407 nC @ 10 V | ±20V | 13660 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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SPB20N60C3ATMA1MOSFET N-CH 650V 20.7A TO263-3 |
919 | 7.20 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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AOTL66912MOSFET N-CH 100V 49A/380A TOLLA |
1960 | 7.16 |
ДобавитьНемедленный |
Tape & Reel (TR),Cut Tape (CT) | AlphaSGT™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 49A (Ta), 380A (Tc) | 6V, 10V | 1.7mOhm @ 20A, 10V | 3.5V @ 250µA | 220 nC @ 10 V | ±20V | 12500 pF @ 50 V | - | 8.3W (Ta), 500W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
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IPB020NE7N3GATMA1MOSFET N-CH 75V 120A D2PAK |
2620 | 7.63 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 2mOhm @ 100A, 10V | 3.8V @ 273µA | 206 nC @ 10 V | ±20V | 14400 pF @ 37.5 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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AOT27S60LMOSFET N-CH 600V 27A TO220 |
3584 | 4.20 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | aMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 27A (Tc) | 10V | 160mOhm @ 13.5A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±30V | 1294 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPB80R290C3AATMA2MOSFET N-CH 800V 17A TO263-3 |
3000 | 7.29 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 117 nC @ 10 V | ±20V | 2300 pF @ 100 V | - | 227W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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IRFP260NPBFMOSFET N-CH 200V 50A TO247AC |
7677 | 4.42 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 50A (Tc) | 10V | 40mOhm @ 28A, 10V | 4V @ 250µA | 234 nC @ 10 V | ±20V | 4057 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFB4310ZPBFMOSFET N-CH 100V 120A TO220AB |
7819 | 4.15 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | ±20V | 6860 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFI4110GPBFMOSFET N-CH 100V 72A TO220AB FP |
33499 | 4.57 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 72A (Tc) | 10V | 4.5mOhm @ 43A, 10V | 4V @ 250µA | 290 nC @ 10 V | ±20V | 9540 pF @ 50 V | - | 61W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFP7430PBFMOSFET N-CH 40V 195A TO247AC |
1091 | 4.58 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 6V, 10V | 1.3mOhm @ 100A, 10V | 3.9V @ 250µA | 460 nC @ 10 V | ±20V | 14240 pF @ 25 V | - | 366W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IAUS300N08S5N012TATMA1MOSFET N-CH 80V 300A HDSOP-16-2 |
3274 | 7.78 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ 5 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 300A (Tj) | 6V, 10V | 1.2mOhm @ 100A, 10V | 3.8V @ 275µA | 231 nC @ 10 V | ±20V | 16250 pF @ 40 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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AUIRF4905STRLMOSFET P-CH 55V 42A D2PAK |
705 | 7.66 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 10V | 20mOhm @ 42A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 3500 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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PSMN3R3-80PS,127MOSFET N-CH 80V 120A TO220AB |
3186 | 4.86 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 3.3mOhm @ 25A, 10V | 4V @ 1mA | 139 nC @ 10 V | ±20V | 9961 pF @ 40 V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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SPP80P06PHXKSA1MOSFET P-CH 60V 80A TO220-3 |
3646 | 4.49 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | SIPMOS® | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 23mOhm @ 64A, 10V | 4V @ 5.5mA | 173 nC @ 10 V | ±20V | 5033 pF @ 25 V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRLB3036PBFMOSFET N-CH 60V 195A TO220AB |
37437 | 4.92 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 4.5V, 10V | 2.4mOhm @ 165A, 10V | 2.5V @ 250µA | 140 nC @ 4.5 V | ±16V | 11210 pF @ 50 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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UJ3C065080B3MOSFET N-CH 650V 25A TO263 |
5390 | 7.92 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | - | 650 V | 25A (Tc) | 12V | 111mOhm @ 20A, 12V | 6V @ 10mA | 51 nC @ 15 V | ±25V | 1500 pF @ 100 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRLB4030PBFMOSFET N-CH 100V 180A TO220AB |
13775 | 5.17 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 4.5V, 10V | 4.3mOhm @ 110A, 10V | 2.5V @ 250µA | 130 nC @ 4.5 V | ±16V | 11360 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFP360PBFMOSFET N-CH 400V 23A TO247-3 |
4792 | 5.31 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 23A (Tc) | 10V | 200mOhm @ 14A, 10V | 4V @ 250µA | 210 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |