Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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G3R30MT12JSIC MOSFET N-CH 96A TO263-7 |
529 | 24.20 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 96A (Tc) | 15V | 36mOhm @ 50A, 15V | 2.69V @ 12mA | 155 nC @ 15 V | ±15V | 3901 pF @ 800 V | - | 459W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IMZA65R027M1HXKSA1MOSFET 650V NCH SIC TRENCH |
116 | 28.76 |
ДобавитьНемедленный |
Tube | - | Active | - | - | - | 59A (Tc) | - | - | - | - | - | - | - | - | - | - | |
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UJ3C120040K3SSICFET N-CH 1200V 65A TO247-3 |
1972 | 29.30 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 65A (Tc) | 12V | 45mOhm @ 40A, 12V | 6V @ 10mA | 51 nC @ 15 V | ±25V | 1500 pF @ 100 V | - | 429W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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UF3C120040K3SSICFET N-CH 1200V 65A TO247-3 |
1063 | 29.30 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 65A (Tc) | 12V | 45mOhm @ 40A, 12V | 6V @ 10mA | 51 nC @ 15 V | ±25V | 1500 pF @ 100 V | - | 429W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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UF3C120040K4SSICFET N-CH 1200V 65A TO247-4 |
918 | 29.30 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 65A (Tc) | 12V | 45mOhm @ 40A, 12V | 6V @ 10mA | 43 nC @ 12 V | ±25V | 1500 pF @ 100 V | - | 429W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPW65R019C7FKSA1MOSFET N-CH 650V 75A TO247-3 |
279 | 29.95 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 19mOhm @ 58.3A, 10V | 4V @ 2.92mA | 215 nC @ 10 V | ±20V | 9900 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXTT02N450HVMOSFET N-CH 4500V 200MA TO268 |
956 | 32.50 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 4500 V | 200mA (Tc) | 10V | 750Ohm @ 10mA, 10V | 6.5V @ 250µA | 10.4 nC @ 10 V | ±20V | 256 pF @ 25 V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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G3R45MT17DSIC MOSFET N-CH 61A TO247-3 |
146 | 34.69 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 61A (Tc) | 15V | 58mOhm @ 40A, 15V | 2.7V @ 8mA | 182 nC @ 15 V | ±15V | 4523 pF @ 1000 V | - | 438W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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G3R45MT17KSIC MOSFET N-CH 61A TO247-4 |
919 | 35.06 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 61A (Tc) | 15V | 58mOhm @ 40A, 15V | 2.7V @ 8mA | 182 nC @ 15 V | ±15V | 4523 pF @ 1000 V | - | 438W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IXTK90N25L2MOSFET N-CH 250V 90A TO264 |
2784 | 35.52 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 90A (Tc) | 10V | 33mOhm @ 45A, 10V | 4.5V @ 3mA | 640 nC @ 10 V | ±20V | 23000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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NTH4L022N120M3SSIC MOS TO247-4L 22MOHM 1200V |
184 | 36.15 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 68A (Tc) | 18V | 30mOhm @ 40A, 18V | 4.4V @ 20mA | 151 nC @ 18 V | +22V, -10V | 3175 pF @ 800 V | - | 352W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IXTN170P10PMOSFET P-CH 100V 170A SOT227B |
223 | 37.01 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | Polar | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 170A (Tc) | 10V | 12mOhm @ 500mA, 10V | 4V @ 1mA | 240 nC @ 10 V | ±20V | 12600 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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IXTN600N04T2MOSFET N-CH 40V 600A SOT227B |
209 | 37.02 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 600A (Tc) | 10V | 1.05mOhm @ 100A, 10V | 3.5V @ 250µA | 590 nC @ 10 V | ±20V | 40000 pF @ 25 V | - | 940W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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IXTK60N50L2MOSFET N-CH 500V 60A TO264 |
961 | 37.96 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 60A (Tc) | 10V | 100mOhm @ 30A, 10V | 4.5V @ 250µA | 610 nC @ 10 V | ±30V | 24000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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MSC015SMA070BSICFET N-CH 700V 131A TO247-3 |
289 | 38.19 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 131A (Tc) | 20V | 19mOhm @ 40A, 20V | 2.4V @ 1mA | 215 nC @ 20 V | +25V, -10V | 4500 pF @ 700 V | - | 400W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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G3R20MT12KSIC MOSFET N-CH 128A TO247-4 |
689 | 38.25 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 128A (Tc) | 15V | 24mOhm @ 60A, 15V | 2.69V @ 15mA | 219 nC @ 15 V | ±15V | 5873 pF @ 800 V | - | 542W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IXFN32N100PMOSFET N-CH 1000V 27A SOT-227B |
848 | 38.52 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 27A (Tc) | 10V | 320mOhm @ 16A, 10V | 6.5V @ 1mA | 225 nC @ 10 V | ±30V | 14200 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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UJ4SC075009K4S750V/9MOHM, SIC, STACKED CASCODE |
193 | 39.32 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 106A (Tc) | 12V | 11.5mOhm @ 70A, 12V | 5.5V @ 10mA | 75 nC @ 15 V | ±20V | 3340 pF @ 400 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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MSC025SMA120BSICFET N-CH 1.2KV 103A TO247-3 |
399 | 42.86 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 103A (Tc) | 20V | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232 nC @ 20 V | +25V, -10V | 3020 pF @ 1000 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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STE53NC50MOSFET N-CH 500V 53A ISOTOP |
175 | 43.42 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | PowerMESH™ II | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 53A (Tc) | 10V | 80mOhm @ 27A, 10V | 4V @ 250µA | 434 nC @ 10 V | ±30V | 11200 pF @ 25 V | - | 460W (Tc) | 150°C (TJ) | Chassis Mount |