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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
MCH6336-TL-E

MCH6336-TL-E

MOSFET P-CH 12V 5A SC88FL/ MCPH6

Sanyo

2989 0.16
- +

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MCH6336-TL-E

Datenblatt

Bulk - Active P-Channel MOSFET (Metal Oxide) 12 V 5A (Ta) - 43mOhm @ 3A, 4.5V 1.4V @ 1mA 6.9 nC @ 4.5 V ±10V 660 pF @ 6 V - 1.5W (Ta) 150°C (TJ) Surface Mount
IPS135N03LG

IPS135N03LG

N-CHANNEL POWER MOSFET

Infineon Technologies

2861 0.16
- +

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IPS135N03LG

Datenblatt

Bulk - Active - - - - - - - - - - - - - -
BSO083N03N03MSG

BSO083N03N03MSG

N-CHANNEL POWER MOSFET

Infineon Technologies

2500 0.16
- +

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Немедленный

Bulk * Active - - - - - - - - - - - - - -
2SK2158-T2B-AT

2SK2158-T2B-AT

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc

7576 0.17
- +

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2SK2158-T2B-AT

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
NDTL01N60ZT1G

NDTL01N60ZT1G

MOSFET N-CH 600V 250MA SOT223

Fairchild Semiconductor

6000 0.17
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NDTL01N60ZT1G

Datenblatt

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 250mA (Tc) - 15Ohm @ 400mA, 10V 4.5V @ 50µA 4.9 nC @ 10 V ±30V 92 pF @ 25 V - 2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
CPH6311-TL-E

CPH6311-TL-E

P-CHANNEL SILICON MOSFET

Sanyo

5776 0.17
- +

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Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) - 42mOhm @ 3A, 4.5V - 31 nC @ 10 V - 1230 pF @ 10 V - 1.6W (Ta) 150°C (TJ) Surface Mount
2SK1658-T1-A

2SK1658-T1-A

MOSFET N-CH 30V 100MA SC70-3 SSP

Renesas Electronics America Inc

3000 0.17
- +

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2SK1658-T1-A

Datenblatt

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) - 25Ohm @ 10mA, 4V 1.5V @ 1µA - - 15 pF @ 3 V - - - Surface Mount
2SJ559(0)-T1-A

2SJ559(0)-T1-A

SMALL SIGNAL P-CHANNEL MOSFET

Renesas Electronics America Inc

3000 0.17
- +

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2SJ559(0)-T1-A

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
SFI9Z14TU

SFI9Z14TU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

3000 0.17
- +

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Немедленный

SFI9Z14TU

Datenblatt

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) 10V 500mOhm @ 3.4A, 10V 4V @ 250µA 11 nC @ 10 V ±30V 350 pF @ 25 V - 3.8W (Ta), 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK1733-AZ

2SK1733-AZ

N-CHANNEL SMALL SIGNAL MOSFET

onsemi

2500 0.17
- +

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Немедленный

2SK1733-AZ

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRFS720B

IRFS720B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2317 0.17
- +

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Немедленный

IRFS720B

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 3.3A (Tj) 10V 1.75Ohm @ 1.65A, 10V 4V @ 250µA 18 nC @ 10 V ±30V 600 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK2158-L-A

2SK2158-L-A

N-CHANNEL MOSFET

Renesas Electronics America Inc

2150 0.17
- +

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2SK2158-L-A

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FQU1N50TU

FQU1N50TU

MOSFET N-CH 500V 1.1A IPAK

Fairchild Semiconductor

2056 0.17
- +

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Немедленный

FQU1N50TU

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 1.1A (Tc) 10V 9Ohm @ 550mA, 10V 5V @ 250µA 5.5 nC @ 10 V ±30V 150 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR220BTM

IRFR220BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1760 0.17
- +

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Немедленный

IRFR220BTM

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 4.6A (Tc) 10V 800mOhm @ 2.3A, 10V 4V @ 250µA 16 nC @ 10 V ±30V 390 pF @ 25 V - 2.5W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS820B

IRFS820B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

4853 0.18
- +

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Немедленный

IRFS820B

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tj) 10V 2.6Ohm @ 1.25A, 10V 4V @ 250µA 18 nC @ 10 V ±30V 610 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
PH6530AL115

PH6530AL115

POWER FIELD-EFFECT TRANSISTOR

NXP USA Inc.

4500 0.18
- +

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Немедленный

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V - - - - - - - - - - Surface Mount
SSS2N60B

SSS2N60B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3094 0.18
- +

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Немедленный

SSS2N60B

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tj) 10V 5Ohm @ 1A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 490 pF @ 25 V - 23W (Tc) -55°C ~ 150°C (TJ) Through Hole
MTP20N06V

MTP20N06V

N-CHANNEL POWER MOSFET

onsemi

2410 0.18
- +

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Немедленный

MTP20N06V

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
SSR1N60BTM-WS

SSR1N60BTM-WS

MOSFET N-CH 600V 900MA DPAK

Fairchild Semiconductor

2350 0.18
- +

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Немедленный

SSR1N60BTM-WS

Datenblatt

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 900mA (Tc) 10V 12Ohm @ 450mA, 10V 4V @ 250µA 7.7 nC @ 10 V ±30V 215 pF @ 25 V - 2.5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RFD3055

RFD3055

MOSFET N-CH 60V 12A IPAK

Fairchild Semiconductor

2302 0.18
- +

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Немедленный

RFD3055

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 10V 150mOhm @ 12A, 10V 4V @ 250µA 23 nC @ 20 V ±20V 300 pF @ 25 V - 53W (Tc) -55°C ~ 175°C (TJ) Through Hole
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