Добро пожаловать Element Technology Co., Ltd.!

+86 15361839241 +86 0755-23603516
Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT5010LFLLG

APT5010LFLLG

MOSFET N-CH 500V 46A TO264

Microchip Technology

3811 18.05
- +

Добавить

Немедленный

APT5010LFLLG

Datenblatt

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 10V 100mOhm @ 23A, 10V 5V @ 2.5mA 95 nC @ 10 V ±30V 4360 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR64N50P

IXFR64N50P

MOSFET N-CH 500V 35A ISOPLUS247

IXYS

3533 19.93
- +

Добавить

Немедленный

IXFR64N50P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 35A (Tc) 10V 95mOhm @ 32A, 10V 5.5V @ 8mA 150 nC @ 10 V ±30V 8700 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTHL033N65S3HF

NTHL033N65S3HF

MOSFET N-CH 650V 70A TO247-3

onsemi

3103 20.10
- +

Добавить

Немедленный

NTHL033N65S3HF

Datenblatt

Tube FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 70A (Tc) 10V 33mOhm @ 35A, 10V 5V @ 2.5mA 188 nC @ 10 V ±30V 6720 pF @ 400 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT7F120B

APT7F120B

MOSFET N-CH 1200V 7A TO247

Microchip Technology

3635 6.17
- +

Добавить

Немедленный

APT7F120B

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 1200 V 7A (Tc) 10V 2.9Ohm @ 3A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 2565 pF @ 25 V - 335W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC040SMA120S

MSC040SMA120S

SICFET N-CH 1200V 64A TO268

Microchip Technology

2862 26.86
- +

Добавить

Немедленный

MSC040SMA120S

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 64A (Tc) 20V 50mOhm @ 40A, 20V 2.6V @ 2mA 137 nC @ 20 V +23V, -10V 1990 pF @ 1000 V - 303W -55°C ~ 175°C (TJ) Surface Mount
IXFX20N120P

IXFX20N120P

MOSFET N-CH 1200V 20A PLUS247-3

IXYS

2775 26.94
- +

Добавить

Немедленный

IXFX20N120P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 20A (Tc) 10V 570mOhm @ 10A, 10V 6.5V @ 1mA 193 nC @ 10 V ±30V 11100 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT1201R2BLLG

APT1201R2BLLG

MOSFET N-CH 1200V 12A TO247

Microchip Technology

3474 27.92
- +

Добавить

Немедленный

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) 10V 1.2Ohm @ 6A, 10V 5V @ 1mA 150 nC @ 10 V ±30V 3100 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFL100N50P

IXFL100N50P

MOSFET N-CH 500V 70A ISOPLUS264

IXYS

2885 33.56
- +

Добавить

Немедленный

IXFL100N50P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 70A (Tc) 10V 52mOhm @ 50A, 10V 5V @ 8mA 240 nC @ 10 V ±30V 20000 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT14M120S

APT14M120S

MOSFET N-CH 1200V 14A D3PAK

Microchip Technology

3890 11.46
- +

Добавить

Немедленный

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 14A (Tc) 10V 1.1Ohm @ 7A, 10V 5V @ 1mA 145 nC @ 10 V ±30V 4765 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MSC70SM120JCU3

MSC70SM120JCU3

SICFET N-CH 1.2KV 89A SOT227

Microchip Technology

2772 69.81
- +

Добавить

Немедленный

MSC70SM120JCU3

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 89A (Tc) 20V 31mOhm @ 40A, 20V 2.8V @ 1mA 232 nC @ 20 V +25V, -10V 3020 pF @ 1000 V - 395W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
PMV62XN215

PMV62XN215

SMALL SIGNAL FET

NXP USA Inc.

9000 0.04
- +

Добавить

Немедленный

Bulk * Active - - - - - - - - - - - - - -
PMWD18UN118

PMWD18UN118

SMALL SIGNAL N-CHANNEL MOSFET

Philips

5000 0.06
- +

Добавить

Немедленный

PMWD18UN118

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
BF2040RE6814

BF2040RE6814

RF N-CHANNEL MOSFET

Infineon Technologies

9777 0.07
- +

Добавить

Немедленный

BF2040RE6814

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
5LN01SS-TL-E

5LN01SS-TL-E

N-CHANNEL SILICON MOSFET

Sanyo

7980 0.07
- +

Добавить

Немедленный

5LN01SS-TL-E

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 100mA (Ta) 1.5V, 4V 7.8Ohm @ 50mA, 4V - 1.57 nC @ 10 V ±10V 6600 pF @ 10 V - 150mW (Ta) 150°C (TJ) Surface Mount
2SK544E

2SK544E

N-CHANNEL SMALL SIGNAL MOSFET

onsemi

4279 0.07
- +

Добавить

Немедленный

2SK544E

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
BSS119N H7796

BSS119N H7796

SMALL SIGNAL N-CHANNEL MOSFET

Infineon Technologies

10000 0.08
- +

Добавить

Немедленный

BSS119N H7796

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
BF2040E6814HTSA

BF2040E6814HTSA

RF N-CHANNEL MOSFET

Infineon Technologies

6000 0.08
- +

Добавить

Немедленный

BF2040E6814HTSA

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
BF20-40E6814

BF20-40E6814

RF N-CHANNEL MOSFET

Infineon Technologies

4000 0.08
- +

Добавить

Немедленный

BF20-40E6814

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
3LP03M-TL-E

3LP03M-TL-E

P-CHANNEL SILICON MOSFET

Sanyo

6000 0.09
- +

Добавить

Немедленный

3LP03M-TL-E

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
2SK669K-AC

2SK669K-AC

N-CHANNEL SMALL SIGNAL MOSFET

onsemi

5560 0.09
- +

Добавить

Немедленный

2SK669K-AC

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
Total 42446 Records«Prev1... 318319320321322323324325...2123Next»
Запрос котировок
Номер запчасти
А
Связь
Электронная почта
Замечания
  • Домой

    Домой

    Продукты

    Продукты

    Телефон

    Телефон

    Пользователи

    Пользователи