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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK28A65W,S5X

TK28A65W,S5X

MOSFET N-CH 650V 27.6A TO220SIS

Toshiba Semiconductor and Storage

2582 5.25
- +

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TK28A65W,S5X

Datenblatt

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 110mOhm @ 13.8A, 10V 3.5V @ 1.6mA 75 nC @ 10 V ±30V 3000 pF @ 300 V - 45W (Tc) 150°C (TJ) Through Hole
AOK125A60

AOK125A60

MOSFET N-CH 600V 28A TO247

Alpha & Omega Semiconductor Inc.

2623 5.62
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Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 125mOhm @ 14A, 10V 4.5V @ 250µA 39 nC @ 10 V ±20V 2993 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB35N60EF-GE3

SIHB35N60EF-GE3

MOSFET N-CH 600V 32A D2PAK

Vishay Siliconix

2494 6.76
- +

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SIHB35N60EF-GE3

Datenblatt

Bulk EF Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 97mOhm @ 17A, 10V 4V @ 250µA 134 nC @ 10 V ±30V 2568 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM80N950CI C0G

TSM80N950CI C0G

MOSFET N-CH 800V 6A ITO220AB

Taiwan Semiconductor Corporation

478 7.01
- +

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TSM80N950CI C0G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 950mOhm @ 2A, 10V 4V @ 250µA 19.6 nC @ 10 V ±30V 691 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPZA60R120P7XKSA1

IPZA60R120P7XKSA1

MOSFET N-CH 600V 26A TO247-4

Infineon Technologies

2555 7.27
- +

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IPZA60R120P7XKSA1

Datenblatt

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 120mOhm @ 8.2A, 10V 4V @ 410µA 36 nC @ 10 V ±20V 1544 pF @ 400 V - 95W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP42N60M2-EP

STP42N60M2-EP

MOSFET N-CH 600V 34A TO220

STMicroelectronics

3164 7.62
- +

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STP42N60M2-EP

Datenblatt

Tube MDmesh™ M2-EP Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 87mOhm @ 17A, 10V 4.75V @ 250µA 55 nC @ 10 V ±25V 2370 pF @ 100 V - 250W (Tc) 150°C (TJ) Through Hole
IXTK82N25P

IXTK82N25P

MOSFET N-CH 250V 82A TO264

IXYS

2228 10.42
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IXTK82N25P

Datenblatt

Tube Polar Active N-Channel MOSFET (Metal Oxide) 250 V 82A (Tc) 10V 35mOhm @ 41A, 10V 5V @ 250µA 142 nC @ 10 V ±20V 4800 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT34N80B2C3G

APT34N80B2C3G

MOSFET N-CH 800V 34A T-MAX

Microchip Technology

2210 11.17
- +

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APT34N80B2C3G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 34A (Tc) 10V 145mOhm @ 22A, 10V 3.9V @ 2mA 355 nC @ 10 V ±20V 4510 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP15N65M5

STP15N65M5

MOSFET N CH 650V 11A TO220

STMicroelectronics

1000 2.91
- +

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STP15N65M5

Datenblatt

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 340mOhm @ 5.5A, 10V 5V @ 250µA 22 nC @ 10 V ±25V 810 pF @ 100 V - 125W (Tc) 150°C (TJ) Through Hole
NVHL050N65S3HF

NVHL050N65S3HF

MOSFET N-CH 650V 58A TO247-3

onsemi

100 11.66
- +

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NVHL050N65S3HF

Datenblatt

Tube Automotive, AEC-Q101, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 58A (Tc) 10V 50mOhm @ 29A, 10V 5V @ 1.7mA 119 nC @ 10 V ±30V 4880 pF @ 400 V - 403W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK31Z60X,S1F

TK31Z60X,S1F

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

2553 11.83
- +

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Немедленный

TK31Z60X,S1F

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 9.4A, 10V 3.5V @ 1.5mA 65 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C Through Hole
NTHLD040N65S3HF

NTHLD040N65S3HF

MOSFET N-CH 650V 65A TO247

onsemi

2685 12.53
- +

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NTHLD040N65S3HF

Datenblatt

Tube FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 65A (Tc) 10V 40mOhm @ 32.5A, 10V 5V @ 2.1mA 159 nC @ 10 V ±30V 5945 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW58N60DM2AG

STW58N60DM2AG

MOSFET N-CH 600V 50A TO247

STMicroelectronics

2523 12.63
- +

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Немедленный

STW58N60DM2AG

Datenblatt

Tube Automotive, AEC-Q101, MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 60mOhm @ 25A, 10V 5V @ 250µA 90 nC @ 10 V ±25V 4100 pF @ 100 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP7N95K3

STP7N95K3

MOSFET N-CH 950V 7.2A TO220-3

STMicroelectronics

320 3.29
- +

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STP7N95K3

Datenblatt

Tube SuperMESH3™ Active N-Channel MOSFET (Metal Oxide) 950 V 7.2A (Tc) 10V 1.35Ohm @ 3.6A, 10V 5V @ 100µA 34 nC @ 10 V ±30V 1031 pF @ 100 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPW35N60C3FKSA1

SPW35N60C3FKSA1

MOSFET N-CH 650V 34.6A TO247-3

Infineon Technologies

3156 12.87
- +

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Немедленный

SPW35N60C3FKSA1

Datenblatt

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 34.6A (Tc) 10V 100mOhm @ 21.9A, 10V 3.9V @ 1.9mA 200 nC @ 10 V ±20V 4500 pF @ 25 V - 313W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMZA65R107M1HXKSA1

IMZA65R107M1HXKSA1

MOSFET 650V NCH SIC TRENCH

Infineon Technologies

307 13.65
- +

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Немедленный

Tube - Active - - - 20A (Tc) - - - - - - - - - -
APT34F60B

APT34F60B

MOSFET N-CH 600V 36A TO247

Microchip Technology

3422 13.86
- +

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Немедленный

APT34F60B

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 210mOhm @ 17A, 10V 5V @ 1mA 165 nC @ 10 V ±30V 6640 pF @ 25 V - 624W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT34M60S

APT34M60S

MOSFET N-CH 600V 36A D3PAK

Microchip Technology

2876 14.19
- +

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APT34M60S

Datenblatt

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 190mOhm @ 17A, 10V 5V @ 1mA 165 nC @ 10 V ±30V 6640 pF @ 25 V - 624W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IMZA65R072M1HXKSA1

IMZA65R072M1HXKSA1

MOSFET 650V NCH SIC TRENCH

Infineon Technologies

288 14.80
- +

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Немедленный

Tube - Active - - - 28A (Tc) - - - - - - - - - -
TK62Z60X,S1F

TK62Z60X,S1F

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

2802 16.63
- +

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Немедленный

TK62Z60X,S1F

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 40mOhm @ 21A, 10V 3.5V @ 3.1mA 135 nC @ 10 V ±30V 6500 pF @ 300 V - 400W (Tc) 150°C Through Hole
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