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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTD5862NT4G

NTD5862NT4G

POWER FIELD-EFFECT TRANSISTOR, 9

onsemi

3385 1.00
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NTD5862NT4G

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Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 98A (Tc) 10V 5.7mOhm @ 45A, 10V 4V @ 250µA 82 nC @ 10 V ±20V 6000 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN7R0-100BS,118

PSMN7R0-100BS,118

NEXPERIA PSMN7R0-100BS - 100A, 1

NXP Semiconductors

2643 1.00
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PSMN7R0-100BS,118

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Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 6.8mOhm @ 15A, 10V 4V @ 1mA 125 nC @ 10 V ±20V 6686 pF @ 50 V - 269W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3806TRL

AUIRFS3806TRL

MOSFET_)40V,60V)

Infineon Technologies

3061 1.00
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AUIRFS3806TRL

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NDS355AN-F169

NDS355AN-F169

N-CHANNEL LOGIC LEVEL ENHANCEMEN

Fairchild Semiconductor

3378 1.00
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NDS355AN-F169

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Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 1.7A (Ta) 4.5V, 10V 85mOhm @ 1.9A, 10V 2V @ 250µA 5 nC @ 5 V ±20V 195 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRF2804S-7P

AUIRF2804S-7P

AUIRF2804 - 20V-40V N-CHANNEL AU

Infineon Technologies

3706 1.00
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AUIRF2804S-7P

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.6mOhm @ 160A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6930 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RF1K4909096

RF1K4909096

RF1K4909096 - POWER FIELD-EFFECT

Harris Corporation

2395 1.00
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RF1K4909096

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Bulk * Active - - - - - - - - - - - - - -
BUK7K89-100EX

BUK7K89-100EX

NEXPERIA BUK7K89 - DUAL N-CHANNE

NXP Semiconductors

2860 1.00
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BUK7K89-100EX

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Bulk * Active - - - - - - - - - - - - - -
IPP50R280CEXKSA1

IPP50R280CEXKSA1

CONSUMER

Infineon Technologies

3111 1.00
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IPP50R280CEXKSA1

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Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 13V 280mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6 nC @ 10 V ±20V 773 pF @ 100 V Super Junction 92W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTHL080N120SC1

NTHL080N120SC1

SILICON CARBIDE MOSFET, N-CHANNE

onsemi

2978 1.00
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NTHL080N120SC1

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Bulk - Active N-Channel SiCFET (Silicon Carbide) 1200 V 44A (Tc) 20V 110mOhm @ 20A, 20V 4.3V @ 5mA 56 nC @ 20 V +25V, -15V 1670 pF @ 800 V - 348W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB38N20DPBF

IRFB38N20DPBF

IRFB38N20 - 12V-300V N-CHANNEL P

Infineon Technologies

3558 1.00
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IRFB38N20DPBF

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 43A (Tc) 10V 54mOhm @ 26A, 10V 5V @ 250µA 91 nC @ 10 V ±20V 2900 pF @ 25 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD50N04S308ATMA1

IPD50N04S308ATMA1

IPD50N04 - 20V-40V N-CHANNEL AUT

Infineon Technologies

2855 1.00
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IPD50N04S308ATMA1

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Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 7.5mOhm @ 50A, 10V 4V @ 40µA 35 nC @ 10 V ±20V 2350 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6617TRPBF

IRF6617TRPBF

IRF6617 - 12V-300V N-CHANNEL POW

Infineon Technologies

3599 1.00
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IRF6617TRPBF

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 55A (Tc) 4.5V, 10V 8.1mOhm @ 15A, 10V 2.35V @ 250µA 17 nC @ 4.5 V ±20V 1300 pF @ 15 V - 2.1W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
FDP032N08B

FDP032N08B

N-CHANNEL POWERTRENCH MOSFET 80V

Fairchild Semiconductor

3432 1.00
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FDP032N08B

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IPL60R285P7AUMA1

IPL60R285P7AUMA1

LOW POWER_NEW

Infineon Technologies

2363 1.00
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IPL60R285P7AUMA1

Datenblatt

Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 285mOhm @ 3.8A, 10V 4V @ 190µA 18 nC @ 10 V ±20V 761 pF @ 400 V - 59W (Tc) -40°C ~ 150°C (TJ) Surface Mount
NVMFS5844NLT3G

NVMFS5844NLT3G

POWER MOSFET, SINGLE N-CHANNEL

onsemi

3520 0.00
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NVMFS5844NLT3G

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Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 11.2A (Ta) 4.5V, 10V 12mOhm @ 10A, 10V 2.3V @ 250µA 30 nC @ 10 V ±20V 1460 pF @ 25 V - 3.7W (Ta), 107W (Tc) -55°C ~ 175°C (TJ)
GT105N10F

GT105N10F

N100V,RD(MAX)<10.5M@10V,RD(MAX)<

Goford Semiconductor

2458 1.47
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GT105N10F

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Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 25A (Tc) 4.5V, 10V 10.5mOhm @ 11A, 10V 2.5V @ 250µA 54 nC @ 10 V ±20V - - 20.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK7Y98-80E,115

BUK7Y98-80E,115

NEXPERIA BUK7Y98 - N-CHANNEL 80

NXP Semiconductors

2509 1.00
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BUK7Y98-80E,115

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
HUF76639S3ST-F085

HUF76639S3ST-F085

HUF76639 - N-CHANNEL LOGIC LEVEL

Fairchild Semiconductor

3985 0.00
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HUF76639S3ST-F085

Datenblatt

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 51A (Tc) 10V 26mOhm @ 51A, 10V 3V @ 250µA 86 nC @ 10 V ±16V 2400 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PMPB12UNEAX

PMPB12UNEAX

PMPB12UNEA - 20 V, N-CHANNEL TRE

Nexperia USA Inc.

2401 1.00
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PMPB12UNEAX

Datenblatt

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 20 V 7.9A (Ta) 1.8V, 4.5V 18mOhm @ 7.9A, 4.5V 0.9V @ 250µA 17 nC @ 10 V ±12V 1220 pF @ 10 V - 1.6W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCD3400N80Z

FCD3400N80Z

POWER FIELD-EFFECT TRANSISTOR, N

onsemi

2046 1.00
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FCD3400N80Z

Datenblatt

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 3.4Ohm @ 1A, 10V 4.5V @ 200µA 9.6 nC @ 10 V ±20V 400 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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