Добро пожаловать Element Technology Co., Ltd.!

+86 15361839241 +86 0755-23603516
Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDS4470

FDS4470

POWER FIELD-EFFECT TRANSISTOR, 1

onsemi

2699 1.00
- +

Добавить

Немедленный

FDS4470

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 12.5A (Ta) 10V 9mOhm @ 12.5A, 10V 5V @ 250µA 63 nC @ 10 V +30V, -20V 2659 pF @ 20 V - 2.5W (Ta) -55°C ~ 175°C (TJ) Surface Mount
3LN01S-TL-E

3LN01S-TL-E

3LN01 - 30 VOLT, 0.15 A, 3.7 OHM

onsemi

3181 1.00
- +

Добавить

Немедленный

3LN01S-TL-E

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
AUIRFN8401TR

AUIRFN8401TR

AUIRFN8401 - 20V-40V N-CHANNEL A

Infineon Technologies

3804 1.00
- +

Добавить

Немедленный

AUIRFN8401TR

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 84A (Tc) 10V 4.6mOhm @ 50A, 10V 3.9V @ 50µA 66 nC @ 10 V ±20V 2170 pF @ 25 V - 4.2W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PBHV9115Z,115

PBHV9115Z,115

NEXPERIA PBHV9115Z - SMALL SIGNA

NXP Semiconductors

3480 1.00
- +

Добавить

Немедленный

PBHV9115Z,115

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
SPP20N65C3XKSA1

SPP20N65C3XKSA1

HIGH POWER_LEGACY

Infineon Technologies

3989 1.00
- +

Добавить

Немедленный

SPP20N65C3XKSA1

Datenblatt

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 20.7A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDS8984-F085

FDS8984-F085

N-CHANNEL POWERTRENCH MOSFET 30V

onsemi

3502 1.00
- +

Добавить

Немедленный

FDS8984-F085

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
BUK7226-75A/C1,118

BUK7226-75A/C1,118

N-CHANNEL TRENCHMOS STANDARD LEV

Nexperia USA Inc.

3543 1.00
- +

Добавить

Немедленный

BUK7226-75A/C1,118

Datenblatt

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 45A (Tc) 10V 26mOhm @ 25A, 10V 4V @ 1mA 48 nC @ 10 V ±20V 2385 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RFD8P06LE

RFD8P06LE

8A, 60V, 0.33OHM, P-CHANNEL POWE

Harris Corporation

3211 1.00
- +

Добавить

Немедленный

RFD8P06LE

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
NTPF110N65S3HF

NTPF110N65S3HF

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

3425 0.00
- +

Добавить

Немедленный

NTPF110N65S3HF

Datenblatt

Bulk FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 110mOhm @ 15A, 10V 5V @ 740µA 62 nC @ 10 V ±30V 2635 pF @ 400 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDC655BN-F40

FDC655BN-F40

N-CHANNEL POWERTRENCH MOSFET, LO

Fairchild Semiconductor

3491 1.00
- +

Добавить

Немедленный

FDC655BN-F40

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 6.3A (Ta) 4.5V, 10V 25mOhm @ 6.3A, 10V 3V @ 250µA 13 nC @ 10 V ±20V 620 pF @ 15 V - 800mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
NDF0610

NDF0610

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

3181 1.00
- +

Добавить

Немедленный

NDF0610

Datenblatt

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 180mA (Ta) - 10Ohm @ 500mA, 10V 3.5V @ 1mA 1.43 nC @ 10 V - 60 pF @ 25 V - - - Through Hole
NVMFD5852NLT1G

NVMFD5852NLT1G

POWER MOSFET 40V, 44A, 6.9 MOHM

onsemi

3432 0.00
- +

Добавить

Немедленный

NVMFD5852NLT1G

Datenblatt

Bulk * Active - - - - - - - - - - - - -
BUK7M6R7-40HX

BUK7M6R7-40HX

BUK7M6R7-40H - N-CHANNEL 40V, ST

Nexperia USA Inc.

3618 1.00
- +

Добавить

Немедленный

Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Ta) 10V 6.7mOhm @ 20A, 10V 3.6V @ 1mA 24 nC @ 10 V +20V, -10V 1625 pF @ 25 V - 65W (Ta) -55°C ~ 175°C (TJ) Surface Mount
DI040P04PT

DI040P04PT

MOSFET, -40V, -40A, P, 22.7W

Diotec Semiconductor

3793 1.43
- +

Добавить

Немедленный

DI040P04PT

Datenblatt

Tape & Reel (TR),Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 15mOhm @ 10A, 10V 2.5V @ 250µA 59 nC @ 10 V ±20V 3538 pF @ 20 V - 22.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RF1K4909396

RF1K4909396

RF1K4909396 - POWER FIELD-EFFECT

Harris Corporation

2109 1.00
- +

Добавить

Немедленный

RF1K4909396

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
PMN230ENEX

PMN230ENEX

PMN230ENE - 60 V, N-CHANNEL TREN

Nexperia USA Inc.

3170 1.00
- +

Добавить

Немедленный

PMN230ENEX

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 1.6A (Ta) 4.5V, 10V 222mOhm @ 1.6A, 10V 2.7V @ 250µA 5 nC @ 10 V ±20V 177 pF @ 30 V - 475mW (Ta), 3.9W (Tc) 150°C (TJ) Surface Mount
FDMC7200

FDMC7200

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi

3520 1.00
- +

Добавить

Немедленный

FDMC7200

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FDMC6696P

FDMC6696P

FDMC6696 - P-CHANNEL POWERTRENCH

onsemi

2089 1.00
- +

Добавить

Немедленный

FDMC6696P

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FDMS86500DC

FDMS86500DC

N-CHANNEL DUAL COOLTM 56 POWER T

onsemi

3887 1.00
- +

Добавить

Немедленный

FDMS86500DC

Datenblatt

Bulk Dual Cool™, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 29A (Ta), 108A (Tc) 8V, 10V 2.3mOhm @ 29A, 10V 4.5V @ 250µA 107 nC @ 10 V ±20V 7680 pF @ 30 V - 3.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
CPH3360-TL-W

CPH3360-TL-W

CPH3360 - P-CHANNEL POWER MOSFET

onsemi

3168 1.00
- +

Добавить

Немедленный

CPH3360-TL-W

Datenblatt

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 1.6A (Ta) 4V, 10V 303mOhm @ 800mA, 10V 2.6V @ 1mA 2.2 nC @ 10 V ±20V 82 pF @ 10 V - 900mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
Total 42446 Records«Prev1... 12831284128512861287128812891290...2123Next»
Запрос котировок
Номер запчасти
А
Связь
Электронная почта
Замечания
  • Домой

    Домой

    Продукты

    Продукты

    Телефон

    Телефон

    Пользователи

    Пользователи