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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFS4620PBF

IRFS4620PBF

MOSFET N-CH 200V 24A D2PAK

International Rectifier

3800 1.00
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IRFS4620PBF

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 77.5mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFSL7534PBF

IRFSL7534PBF

MOSFET N-CH 60V 195A TO262

International Rectifier

2443 1.00
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IRFSL7534PBF

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Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 6V, 10V 2.4mOhm @ 100A, 10V 3.7V @ 250µA 279 nC @ 10 V ±20V 10034 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMC7572S

FDMC7572S

MOSFET N-CH 25V 22.5A/40A PWR33

Fairchild Semiconductor

2816 1.00
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FDMC7572S

Datenblatt

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 25 V 22.5A (Ta), 40A (Tc) 4.5V, 10V 3.15mOhm @ 22.5A, 10V 3V @ 1mA 44 nC @ 10 V ±20V 2705 pF @ 13 V - 2.3W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMS0310S

FDMS0310S

MOSFET N-CH 30V 19A/42A 8PQFN

Fairchild Semiconductor

2749 1.00
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FDMS0310S

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Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 42A (Tc) 4.5V, 10V 4mOhm @ 18A, 10V 3V @ 1mA 46 nC @ 10 V ±20V 2820 pF @ 15 V - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPA60R380C6

IPA60R380C6

600V COOLMOS POWER TRANSISTOR

Infineon Technologies

3298 1.00
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IPA60R380C6

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FQP32N20C

FQP32N20C

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor

2244 1.00
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FQP32N20C

Datenblatt

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 28A (Tc) 10V 82mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 2200 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
PMZB320UPE,315

PMZB320UPE,315

NOW NEXPERIA PMZB320UPE - SMALL

Nexperia USA Inc.

3323 1.00
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PMZB320UPE,315

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IPA80R310CE

IPA80R310CE

IPA80R310 - 800V COOLMOS N-CHANN

Infineon Technologies

3886 1.00
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IPA80R310CE

Datenblatt

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 16.7A (Tc) 10V 310mOhm @ 11A, 10V 3.9V @ 1mA 91 nC @ 10 V ±20V 2320 pF @ 100 V - 35W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRLMS1503TRPBF

IRLMS1503TRPBF

IRLMS1503 - 12V-300V N-CHANNEL P

International Rectifier

3462 1.00
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IRLMS1503TRPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 3.2A (Ta) 4.5V, 10V 100mOhm @ 2.2A, 10V 1V @ 250µA 9.6 nC @ 10 V ±20V 210 pF @ 25 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLS3036TRL7PP

IRLS3036TRL7PP

IRLS3036 - 12V-300V N-CHANNEL PO

International Rectifier

3649 1.00
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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 4.5V, 10V 1.9mOhm @ 180A, 10V 2.5V @ 250µA 160 nC @ 4.5 V ±16V 11270 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6662TRPBF

IRF6662TRPBF

IRF6662 - 12V-300V N-CHANNEL POW

International Rectifier

3858 1.00
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IRF6662TRPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 8.3A (Ta), 47A (Tc) 10V 22mOhm @ 8.2A, 10V 4.9V @ 100µA 31 nC @ 10 V ±20V 1360 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPB031NE7N3G

IPB031NE7N3G

IPB031NE7 - 12V-300V N-CHANNEL P

Infineon Technologies

2346 1.00
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IPB031NE7N3G

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FQPF4N90CT

FQPF4N90CT

MOSFET N-CH 900V 4A TO220F

Fairchild Semiconductor

2154 1.00
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FQPF4N90CT

Datenblatt

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 900 V 4A (Tc) 10V 4.2Ohm @ 2A, 10V 5V @ 250µA 22 nC @ 10 V ±30V 960 pF @ 25 V - 47W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP126N10N3G

IPP126N10N3G

MOSFET N-CH 100V 58A TO220-3

Infineon Technologies

3735 1.00
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IPP126N10N3G

Datenblatt

Bulk OptiMOS™ 3 Active N-Channel MOSFET (Metal Oxide) 100 V 58A (Tc) - 12.6mOhm @ 46A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2500 pF @ 50 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
PMCPB5530X

PMCPB5530X

NOW NEXPERIA PMCPB5530X - SMALL

NXP USA Inc.

2210 1.00
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PMCPB5530X

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
PSMN8R040PS127

PSMN8R040PS127

MOSFET N-CH 40V 77A TO220AB

NXP USA Inc.

3845 1.00
- +

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PSMN8R040PS127

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 77A (Ta) - 7.6mOhm @ 25A, 10V 4V @ 1mA 21 nC @ 10 V ±20V 1262 pF @ 12 V - 86W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRLR7821PBF

IRLR7821PBF

MOSFET N-CH 30V 65A DPAK

International Rectifier

2595 1.00
- +

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Немедленный

IRLR7821PBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 65A (Tc) 4.5V, 10V 10mOhm @ 15A, 10V 1V @ 250µA 14 nC @ 4.5 V ±20V 1030 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SP001434884

SP001434884

IPN60R1K0CEATMA1 - MOSFET

Infineon Technologies

3439 1.00
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SP001434884

Datenblatt

Bulk CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tc) 10V 1Ohm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V ±20V 280 pF @ 100 V - 5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
MMBF170

MMBF170

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

3411 1.00
- +

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MMBF170

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 500mA (Ta) 10V 5Ohm @ 200mA, 10V 3V @ 1mA - ±20V 40 pF @ 10 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPP80N06S2-09

IPP80N06S2-09

IPP80N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies

2740 0.00
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IPP80N06S2-09

Datenblatt

Bulk * Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 9.1mOhm @ 50A, 10V 4V @ 125µA 80 nC @ 10 V ±20V 2360 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
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