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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK769R6-80E,118

BUK769R6-80E,118

MOSFET N-CH 80V 75A D2PAK

NXP USA Inc.

2983 1.00
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BUK769R6-80E,118

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Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 75A (Tc) 10V 9.6mOhm @ 20A, 10V 4V @ 1mA 59.8 nC @ 10 V ±20V 4682 pF @ 25 V - 182W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD50R800CE

IPD50R800CE

IPD50R800 - 500V COOLMOS N-CHANN

Infineon Technologies

3630 1.00
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IPD50R800CE

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Bulk * Active - - - - - - - - - - - - - -
BUK762R6-60E,118

BUK762R6-60E,118

MOSFET N-CH 60V 120A D2PAK

NXP USA Inc.

3204 1.00
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BUK762R6-60E,118

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Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.6mOhm @ 25A, 10V 4V @ 1mA 140 nC @ 10 V ±20V 10170 pF @ 25 V - 324W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3910TRPBF

IRFR3910TRPBF

IRFR3910 - 12V-300V N-CHANNEL PO

International Rectifier

3128 1.00
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IRFR3910TRPBF

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 16A (Tc) 10V 115mOhm @ 10A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 640 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMA710PZ

FDMA710PZ

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

2028 1.00
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FDMA710PZ

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Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 7.8A (Ta) 1.8V, 5V 24mOhm @ 7.8A, 5V 1.5V @ 250µA 42 nC @ 5 V ±8V 2015 pF @ 10 V - 900mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS5690

FDS5690

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

2755 1.00
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FDS5690

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 7A (Ta) 6V, 10V 28mOhm @ 7A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 1107 pF @ 30 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD90N06S4L-05

IPD90N06S4L-05

IPD90N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies

3691 1.00
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IPD90N06S4L-05

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Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 4.6mOhm @ 90A, 10V 2.2V @ 60µA 110 nC @ 10 V ±16V 8180 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCD3400N80Z

FCD3400N80Z

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor

2191 1.00
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FCD3400N80Z

Datenblatt

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 3.4Ohm @ 1A, 10V 4.5V @ 200µA 9.6 nC @ 10 V ±20V 400 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCD620N60ZF

FCD620N60ZF

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor

3882 1.00
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FCD620N60ZF

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Bulk HiPerFET™, Polar™ Active N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 620mOhm @ 3.6A, 10V 5V @ 250µA 36 nC @ 10 V ±20V 1135 pF @ 25 V - 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS6682

FDS6682

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

2835 1.00
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FDS6682

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 7.5mOhm @ 14A, 10V 3V @ 250µA 31 nC @ 5 V ±20V 2310 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMS7682

FDMS7682

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

2531 1.00
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FDMS7682

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta), 22A (Tc) 4.5V, 10V 6.3mOhm @ 14A, 10V 3V @ 250µA 30 nC @ 10 V ±20V 1885 pF @ 15 V - 2.5W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDN338P

FDN338P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

2149 1.00
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FDN338P

Datenblatt

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 1.6A (Ta) 2.5V, 4.5V 115mOhm @ 1.6A, 4.5V 1.5V @ 250µA 6.2 nC @ 4.5 V ±8V 451 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF221

IRF221

N-CHANNEL HERMETIC MOS HEXFET

International Rectifier

3154 1.00
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IRF221

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Bulk * Active - - - - - - - - - - - - - -
IRL3803VPBF

IRL3803VPBF

IRL3803 - 12V-300V N-CHANNEL POW

International Rectifier

3323 1.00
- +

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IRL3803VPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 5.5mOhm @ 71A, 10V 1V @ 250µA 76 nC @ 4.5 V ±16V 3720 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9E04-40A,127

BUK9E04-40A,127

MOSFET N-CH 40V 75A I2PAK

NXP USA Inc.

3153 1.00
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BUK9E04-40A,127

Datenblatt

Bulk Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.3V, 10V 4mOhm @ 25A, 10V 2V @ 1mA 128 nC @ 5 V ±15V 8260 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDN352AP

FDN352AP

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

3797 1.00
- +

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Немедленный

FDN352AP

Datenblatt

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 1.3A (Ta) 4.5V, 10V 180mOhm @ 1.3A, 10V 2.5V @ 250µA 1.9 nC @ 4.5 V ±25V 150 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRF2804S

AUIRF2804S

MOSFET N-CH 40V 195A D2PAK

International Rectifier

3524 1.00
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AUIRF2804S

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 2mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6450 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP50R399CP

IPP50R399CP

IPP50R399 - 500V COOLMOS N-CHANN

Infineon Technologies

2228 1.00
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IPP50R399CP

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FDN340P

FDN340P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

2571 1.00
- +

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Немедленный

FDN340P

Datenblatt

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 2.5V, 4.5V 70mOhm @ 2A, 4.5V 1.5V @ 250µA 10 nC @ 4.5 V ±8V 779 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPP60R180C7

IPP60R180C7

13A, 600V, 0.18OHM, N-CHANNEL MO

Infineon Technologies

2168 1.00
- +

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IPP60R180C7

Datenblatt

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 180mOhm @ 5.3A, 10V 4V @ 260µA 24 nC @ 10 V ±20V 1080 pF @ 400 V - 68W (Tc) -55°C ~ 150°C (TJ) Through Hole
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