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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK7Y9R9-80EX

BUK7Y9R9-80EX

TRANSISTOR >30MHZ

NXP USA Inc.

3789 1.00
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BUK7Y9R9-80EX

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Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 89A (Tc) 10V 98mOhm @ 5A, 10V 4V @ 1mA 51.6 nC @ 10 V ±20V 498 pF @ 25 V - 195W (Tc) -55°C ~ 175°C (TJ) Surface Mount
CPH3442-TL-E

CPH3442-TL-E

MOSFET N-CH 30V 6.5A 3CPH

Sanyo

2528 1.00
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Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) - 24mOhm @ 3A, 4V - 16.1 nC @ 4 V - 1295 pF @ 10 V - 1.2W (Ta) 150°C (TJ) Surface Mount
1IRF3710PBF

1IRF3710PBF

IRF3710 - 100V HEXFET N-CHANNEL

Infineon Technologies

3272 1.00
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1IRF3710PBF

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
AUIRFS8408-7TRL

AUIRFS8408-7TRL

MOSFET N-CH 40V 240A D2PAK

International Rectifier

2778 1.00
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AUIRFS8408-7TRL

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1mOhm @ 100A, 10V 3.9V @ 250µA 315 nC @ 10 V ±20V 10250 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSS214NWH6327

BSS214NWH6327

BSS214 - 250V-600V SMALL SIGNAL

Infineon Technologies

2071 1.00
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BSS214NWH6327

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
AUIRFB3207

AUIRFB3207

MOSFET N-CH 75V 75A TO220AB

International Rectifier

2021 1.00
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AUIRFB3207

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Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7600 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFSL8407

AUIRFSL8407

MOSFET N-CH 40V 195A TO262

International Rectifier

3894 1.00
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AUIRFSL8407

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 2mOhm @ 100A, 10V 4V @ 150µA 225 nC @ 10 V ±20V 7330 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRLS4030TRL

AUIRLS4030TRL

MOSFET N-CH 100V 180A D2PAK

International Rectifier

3406 1.00
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AUIRLS4030TRL

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 4.5V, 10V 4.3mOhm @ 110A, 10V 2.5V @ 250µA 130 nC @ 4.5 V ±16V 11360 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC042N03LSG

BSC042N03LSG

BSC042N03 - 12V-300V N-CHANNEL P

Infineon Technologies

3349 0.00
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BSC042N03LSG

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
AUIRF1010EZS

AUIRF1010EZS

MOSFET N-CH 60V 75A D2PAK

International Rectifier

2527 1.00
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AUIRF1010EZS

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 8.5mOhm @ 51A, 10V 4V @ 250µA 86 nC @ 10 V ±20V 2810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9231

IRF9231

6.5A, 150V, 0.8OHM, P-CHANNEL PO

International Rectifier

2587 1.00
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IRF9231

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Bulk * Active - - - - - - - - - - - - - -
IPW60R099CP

IPW60R099CP

MOSFET N-CH 600V 31A TO247-3-1

Infineon Technologies

3355 1.00
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IPW60R099CP

Datenblatt

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) - 99mOhm @ 18A, 10V 3.5V @ 1.2mA 80 nC @ 10 V ±20V 2800 pF @ 100 V - 255W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB024N06

FDB024N06

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

3015 1.00
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FDB024N06

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.4mOhm @ 75A, 10V 4.5V @ 250µA 226 nC @ 10 V ±20V 14885 pF @ 25 V - 395W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK961R6-40E,118

BUK961R6-40E,118

120A, 40V, 0.0016OHM, N-CHANNEL

NXP USA Inc.

3007 1.00
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BUK961R6-40E,118

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Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 5V 1.4mOhm @ 25A, 10V 2.1V @ 1mA 120 nC @ 5 V ±10V 16400 pF @ 25 V - 357W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP2D3N10C

FDP2D3N10C

N-CHANNEL SHIELDED GATE POWERTRE

Fairchild Semiconductor

3992 1.00
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FDP2D3N10C

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 222A (Tc) 10V 2.3mOhm @ 100A, 10V 4V @ 700µA 152 nC @ 10 V ±20V 11180 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFH7004TRPBF

IRFH7004TRPBF

IRFH7004 - 12V-300V N-CHANNEL PO

International Rectifier

2939 1.00
- +

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Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 6V, 10V 1.4mOhm @ 100A, 10V 3.9V @ 150µA 194 nC @ 10 V ±20V 6419 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDPF12N50UT

FDPF12N50UT

MOSFET N-CH 500V 10A TO220F

Fairchild Semiconductor

2719 1.00
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FDPF12N50UT

Datenblatt

Bulk FRFET® Active N-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 800mOhm @ 5A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 1395 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N7000-D74Z

2N7000-D74Z

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi

2776 0.00
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2N7000-D74Z

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V 3V @ 1mA - ±20V 50 pF @ 25 V - 400mW (Ta) -55°C ~ 150°C (TJ) Through Hole
IRFB4310PBF

IRFB4310PBF

IRFB4310 - 12V-300V N-CHANNEL PO

International Rectifier

3725 1.00
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IRFB4310PBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSO201SPH

BSO201SPH

BSO201 - 20V-250V P-CHANNEL POWE

Infineon Technologies

2299 1.00
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BSO201SPH

Datenblatt

Bulk SIPMOS® Active P-Channel MOSFET (Metal Oxide) 20 V 12A (Ta) 2.5V, 4.5V 8mOhm @ 14.9A, 4.5V 1.2V @ 250µA 88 nC @ 4.5 V ±12V 9600 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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