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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFP4568-E

AUIRFP4568-E

MOSFET N-CH 150V 171A TO247AD

International Rectifier

2316 1.00
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AUIRFP4568-E

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 171A (Tc) 10V 5.9mOhm @ 103A, 10V 5V @ 250µA 227 nC @ 10 V ±30V 10470 pF @ 50 V - 517W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7Y12-100EX

BUK7Y12-100EX

MOSFET N-CH 100V 85A LFPAK56

NXP USA Inc.

2686 1.00
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BUK7Y12-100EX

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Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 85A (Tc) 10V 12mOhm @ 25A, 10V 4V @ 1mA 68 nC @ 10 V ±20V 5067 pF @ 25 V - 238W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7Y6R0-60EX

BUK7Y6R0-60EX

TRANSISTOR >30MHZ

NXP USA Inc.

2483 1.00
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BUK7Y6R0-60EX

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Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 6mOhm @ 25A, 10V 4V @ 1mA 45.4 nC @ 10 V ±20V 4021 pF @ 25 V - 195W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCPF290N80

FCPF290N80

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

2356 1.00
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FCPF290N80

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 290mOhm @ 8.5A, 10V 4.5V @ 1.7mA 75 nC @ 10 V ±20V 3205 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMS7692A

FDMS7692A

MOSFET N-CH 30V 13.5A/28A 8PQFN

Fairchild Semiconductor

2331 1.00
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FDMS7692A

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Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 13.5A (Ta), 28A (Tc) 4.5V, 10V 8mOhm @ 13A, 10V 3V @ 250µA 22 nC @ 10 V ±20V 1350 pF @ 15 V - 2.5W (Ta), 27W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC080N03MSG

BSC080N03MSG

BSC080N03 - 12V-300V N-CHANNEL P

Infineon Technologies

2587 1.00
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BSC080N03MSG

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FDMS8880

FDMS8880

MOSFET N-CH 30V 13.5A/21A 8PQFN

Fairchild Semiconductor

3943 1.00
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FDMS8880

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 13.5A (Ta), 21A (Tc) 4.5V, 10V 8.5mOhm @ 13.5A, 10V 2.5V @ 250µA 33 nC @ 10 V ±20V 1585 pF @ 15 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFP2907Z

AUIRFP2907Z

MOSFET N-CH 75V 170A TO247AC

International Rectifier

3953 1.00
- +

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Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 170A (Tc) 10V 4.5mOhm @ 90A, 10V 4V @ 250µA 270 nC @ 10 V ±20V 7500 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFP4110

AUIRFP4110

MOSFET N-CH 100V 120A TO247AC

International Rectifier

3936 0.00
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AUIRFP4110

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 9620 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R070P6

IPW60R070P6

600V, 0.07OHM, N-CHANNEL MOSFET

Infineon Technologies

3821 0.00
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IPW60R070P6

Datenblatt

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 53.5A (Tc) 10V 70mOhm @ 20.6A, 10V 4.5V @ 1.72mA 100 nC @ 10 V ±20V 4750 pF @ 100 V - 391W (Tc) -55°C ~ 150°C (TJ)
IPW60R330P6

IPW60R330P6

IPW60R330 - 600V COOLMOS N-CHANN

Infineon Technologies

3297 1.00
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Bulk * Active - - - - - - - - - - - - - -
2N7002

2N7002

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

3022 1.00
- +

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2N7002

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 115mA (Tc) 5V, 10V 7.5Ohm @ 50mA, 5V - - ±20V 50 pF @ 25 V - 200mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFB4615PBF

IRFB4615PBF

IRFB4615 - 12V-300V N-CHANNEL PO

International Rectifier

3218 1.00
- +

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IRFB4615PBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 35A (Tc) 10V 39mOhm @ 21A, 10V 5V @ 100µA 26 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4510PBF

IRFB4510PBF

IRFB4510 - 12V-300V N-CHANNEL PO

International Rectifier

3024 1.00
- +

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IRFB4510PBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 62A (Tc) 10V 13.5mOhm @ 37A, 10V 4V @ 100µA 87 nC @ 10 V ±20V 3180 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDB2532

FDB2532

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor

3468 1.00
- +

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FDB2532

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 8A (Ta), 79A (Tc) 6V, 10V 16mOhm @ 33A, 10V 4V @ 250µA 107 nC @ 10 V ±20V 5870 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFF333

IRFF333

3A, 350V, 1.5OHM, N-CHANNEL POWE

International Rectifier

2266 1.00
- +

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Немедленный

IRFF333

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FDD6685

FDD6685

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

2926 1.00
- +

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FDD6685

Datenblatt

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 11A (Ta), 40A (Tc) 4.5V, 10V 20mOhm @ 11A, 10V 3V @ 250µA 24 nC @ 5 V ±25V 1715 pF @ 15 V - 1.6W (Ta) -55°C ~ 175°C (TJ) Surface Mount
IRFP4368PBF

IRFP4368PBF

IRFP4368 - 12V-300V N-CHANNEL PO

International Rectifier

3833 1.00
- +

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Немедленный

IRFP4368PBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 195A (Tc) 10V 1.85mOhm @ 195A, 10V 4V @ 250µA 570 nC @ 10 V ±20V 19230 pF @ 50 V - 520W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDG328P

FDG328P

MOSFET P-CH 20V 1.5A SC88

Fairchild Semiconductor

2385 1.00
- +

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FDG328P

Datenblatt

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 2.5V, 4.5V 145mOhm @ 1.5A, 4.5V 1.5V @ 250µA 6 nC @ 4.5 V ±12V 337 pF @ 10 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BUK753R1-40E,127

BUK753R1-40E,127

NOW NEXPERIA BUK753R1-40E - 100A

Nexperia USA Inc.

2428 1.00
- +

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BUK753R1-40E,127

Datenblatt

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.1mOhm @ 25A, 10V 4V @ 1mA 79 nC @ 10 V ±20V 6200 pF @ 25 V - 234W (Tc) -55°C ~ 175°C (TJ) Through Hole
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