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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STW33N60M6

STW33N60M6

MOSFET N-CH 600V TO247

STMicroelectronics

2706 6.75
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Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tj) - - - - - - - - - Through Hole
IXFT14N80P

IXFT14N80P

MOSFET N-CH 800V 14A TO268

IXYS

2309 6.77
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IXFT14N80P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 14A (Tc) 10V 720mOhm @ 500mA, 10V 5.5V @ 4mA 61 nC @ 10 V ±30V 3900 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP02N50D

IXTP02N50D

MOSFET N-CH 500V 200MA TO220AB

IXYS

3428 6.77
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IXTP02N50D

Datenblatt

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 200mA (Tc) 10V 30Ohm @ 50mA, 0V 5V @ 25µA - ±20V 120 pF @ 25 V Depletion Mode 1.1W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHW47N60EF-GE3

SIHW47N60EF-GE3

MOSFET N-CH 600V 47A TO247AD

Vishay Siliconix

2214 6.79
- +

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SIHW47N60EF-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 65mOhm @ 24A, 10V 4V @ 250µA 225 nC @ 10 V ±30V 4854 pF @ 100 V - 379W (Tc) -55°C ~ 150°C (TJ) Through Hole
STFW45N65M5

STFW45N65M5

MOSFET N-CH 650V 35A ISOWATT

STMicroelectronics

2784 6.82
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STFW45N65M5

Datenblatt

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 78mOhm @ 17.5A, 10V 5V @ 250µA 82 nC @ 10 V ±25V 3470 pF @ 100 V - 57W (Tc) 150°C (TJ) Through Hole
STW34N65M5

STW34N65M5

MOSFET N-CH 650V 28A TO247

STMicroelectronics

2474 6.84
- +

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STW34N65M5

Datenblatt

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 110mOhm @ 14A, 10V 5V @ 250µA 62.5 nC @ 10 V ±25V 2700 pF @ 100 V - 190W (Tc) 150°C (TJ) Through Hole
IXFH22N60P

IXFH22N60P

MOSFET N-CH 600V 22A TO247AD

IXYS

3280 6.87
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IXFH22N60P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 350mOhm @ 11A, 10V 5.5V @ 4mA 58 nC @ 10 V ±30V 3600 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW48N60M6-4

STW48N60M6-4

MOSFET N-CH 600V 39A TO247-4

STMicroelectronics

2049 6.90
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STW48N60M6-4

Datenblatt

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 39A (Tc) 10V 69mOhm @ 19.5A, 10V 4.75V @ 250µA 57 nC @ 10 V ±25V 2578 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT26N60P

IXFT26N60P

MOSFET N-CH 600V 26A TO268

IXYS

2404 6.92
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IXFT26N60P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 270mOhm @ 500mA, 10V 5V @ 4mA 72 nC @ 10 V ±30V 4150 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT34N65X2HV

IXTT34N65X2HV

MOSFET N-CH 650V 34A TO268HV

IXYS

3871 6.92
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IXTT34N65X2HV

Datenblatt

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 34A (Tc) 10V 96mOhm @ 17A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 3000 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHW73N60E-GE3

SIHW73N60E-GE3

MOSFET N-CH 600V 73A TO247AD

Vishay Siliconix

2143 6.96
- +

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SIHW73N60E-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 73A (Tc) 10V 39mOhm @ 36A, 10V 4V @ 250µA 362 nC @ 10 V ±20V 7700 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH32N65X

IXTH32N65X

MOSFET N-CH 650V 32A TO247

IXYS

3103 6.97
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IXTH32N65X

Datenblatt

Tube Ultra X Active N-Channel MOSFET (Metal Oxide) 650 V 32A (Tc) 10V 135mOhm @ 16A, 10V 5.5V @ 250µA 54 nC @ 10 V ±30V 2205 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVH4L045N065SC1

NVH4L045N065SC1

SIC MOS TO247-4L 650V

onsemi

3085 6.99
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NVH4L045N065SC1

Datenblatt

Tray Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 650 V 55A (Tc) 15V, 18V 50mOhm @ 25A, 18V 4.3V @ 8mA 105 nC @ 18 V +22V, -8V 1870 pF @ 325 V - 187W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI60R099CPXKSA1

IPI60R099CPXKSA1

MOSFET N-CH 600V 31A TO262-3

Infineon Technologies

2118 7.00
- +

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IPI60R099CPXKSA1

Datenblatt

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 99mOhm @ 18A, 10V 3.5V @ 1.2mA 80 nC @ 10 V ±20V 2800 pF @ 100 V - 255W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6020JNZC8

R6020JNZC8

MOSFET N-CH 600V 20A TO3PF

Rohm Semiconductor

2598 7.00
- +

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R6020JNZC8

Datenblatt

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 15V 234mOhm @ 10A, 15V 7V @ 3.5mA 45 nC @ 15 V ±30V 1500 pF @ 100 V - 76W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH16N50P3

IXFH16N50P3

MOSFET N-CH 500V 16A TO247AD

IXYS

3334 7.02
- +

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Немедленный

IXFH16N50P3

Datenblatt

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 360mOhm @ 8A, 10V 5V @ 2.5mA 29 nC @ 10 V ±30V 1515 pF @ 25 V - 330W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT7M120S

APT7M120S

MOSFET N-CH 1200V 8A D3PAK

Microchip Technology

2317 7.03
- +

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APT7M120S

Datenblatt

Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 8A (Tc) 10V 2.1Ohm @ 3A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 2565 pF @ 25 V - 335W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NDCTR10120A

NDCTR10120A

MOSFET N-CH 1200V 10A SMD

onsemi

3584 7.04
- +

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Немедленный

Tape & Reel (TR) - Active - - - - - - - - - - - - - -
STF20N95K5

STF20N95K5

MOSFET N-CH 950V 17.5A TO220FP

STMicroelectronics

2968 7.06
- +

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STF20N95K5

Datenblatt

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 950 V 17.5A (Tc) 10V 330mOhm @ 9A, 10V 5V @ 100µA 40 nC @ 10 V ±30V 1500 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R060C7XKSA1

IPA60R060C7XKSA1

MOSFET N-CH 600V 16A TO220

Infineon Technologies

2086 7.08
- +

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Немедленный

IPA60R060C7XKSA1

Datenblatt

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 60mOhm @ 15.9A, 10V 4V @ 800µA 68 nC @ 10 V ±20V 2850 pF @ 400 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
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