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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPL65R065CFD7AUMA1

IPL65R065CFD7AUMA1

HIGH POWER_NEW

Infineon Technologies

3192 6.15
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IPL65R065CFD7AUMA1

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 650 V 33A (Tc) 10V 65mOhm @ 16.4A, 10V 4.5V @ 860µA 68 nC @ 10 V ±20V 3288 pF @ 400 V - 195W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPZ60R099P6FKSA1

IPZ60R099P6FKSA1

MOSFET N-CH 600V 37.9A TO247-4

Infineon Technologies

3581 1.00
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IPZ60R099P6FKSA1

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Bulk,Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 37.9A (Tc) 10V 99mOhm @ 14.5A, 10V 4.5V @ 1.21mA 70 nC @ 10 V ±20V 3330 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT23F60B

APT23F60B

MOSFET N-CH 600V 24A TO247

Microchip Technology

2330 6.24
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APT23F60B

Datenblatt

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 290mOhm @ 11A, 10V 5V @ 1mA 110 nC @ 10 V ±30V 4415 pF @ 25 V - 415W (Tc) -55°C ~ 150°C (TJ) Through Hole
TP65H150G4PS

TP65H150G4PS

GAN FET N-CH 650V TO-220

Transphorm

2906 6.24
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Tube - Active - - - - - - - - - - - - - -
IXTH3N120

IXTH3N120

MOSFET N-CH 1200V 3A TO247

IXYS

3540 6.25
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IXTH3N120

Datenblatt

Box - Active N-Channel MOSFET (Metal Oxide) 1200 V 3A (Tc) 10V 4.5Ohm @ 500mA, 10V 4.5V @ 250µA 39 nC @ 10 V ±20V 1300 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R125CPFKSA1

IPW60R125CPFKSA1

MOSFET N-CH 600V 25A TO247-3

Infineon Technologies

2982 6.25
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IPW60R125CPFKSA1

Datenblatt

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 125mOhm @ 16A, 10V 3.5V @ 1.1mA 70 nC @ 10 V ±20V 2500 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA220N04T2-7

IXTA220N04T2-7

MOSFET N-CH 40V 220A TO263-7

IXYS

2288 6.28
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IXTA220N04T2-7

Datenblatt

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 220A (Tc) 10V 3.5mOhm @ 50A, 10V 4V @ 250µA 112 nC @ 10 V ±20V 6820 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA230N075T2-7

IXTA230N075T2-7

MOSFET N-CH 75V 230A TO263-7

IXYS

2496 6.28
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IXTA230N075T2-7

Datenblatt

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 230A (Tc) 10V 4.2mOhm @ 50A, 10V 4V @ 250µA 178 nC @ 10 V ±20V 10500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFA130N15X3TRL

IXFA130N15X3TRL

MOSFET N-CH 150V 130A TO263

IXYS

3617 6.29
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Tape & Reel (TR) HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 150 V 130A (Tc) 10V 9mOhm @ 65A, 10V 4.5V @ 1.5mA 80 nC @ 10 V ±20V 5230 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA3N120-TRR

IXFA3N120-TRR

MOSFET N-CH 1200V 3A TO263

IXYS

2595 6.33
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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 1200 V 3A (Tc) 10V 4.5Ohm @ 1.5A, 10V 5V @ 1.5mA 39 nC @ 10 V ±20V 1050 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTH102N15T

IXTH102N15T

MOSFET N-CH 150V 102A TO247

IXYS

2123 6.35
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IXTH102N15T

Datenblatt

Tube Trench Active N-Channel MOSFET (Metal Oxide) 150 V 102A (Tc) 10V 18mOhm @ 500mA, 10V 5V @ 1mA 87 nC @ 10 V ±20V 5220 pF @ 25 V - 455W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH86N20T

IXTH86N20T

MOSFET N-CH 200V 86A TO247

IXYS

2830 6.35
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Tube Trench Active N-Channel MOSFET (Metal Oxide) 200 V 86A (Tc) - - - - - - - - - Through Hole
IXTQ86N25T

IXTQ86N25T

MOSFET N-CH 250V 86A TO3P

IXYS

3780 6.35
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Tube Trench Active N-Channel MOSFET (Metal Oxide) 250 V 86A (Tc) 10V 37mOhm @ 43A, 10V 5V @ 1mA 105 nC @ 10 V ±30V 5330 pF @ 25 V - 540W (Ta) -55°C ~ 150°C (TJ) Through Hole
IPI200N25N3GAKSA1

IPI200N25N3GAKSA1

MOSFET N-CH 250V 64A TO262-3

Infineon Technologies

2410 1.00
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IPI200N25N3GAKSA1

Datenblatt

Bulk,Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 250 V 64A (Tc) 10V 20mOhm @ 64A, 10V 4V @ 270µA 86 nC @ 10 V ±20V 7100 pF @ 100 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTQ32N65X

IXTQ32N65X

MOSFET N-CH 650V 32A TO3P

IXYS

2712 6.40
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IXTQ32N65X

Datenblatt

Tube Ultra X Active N-Channel MOSFET (Metal Oxide) 650 V 32A (Tc) 10V 135mOhm @ 16A, 10V 5.5V @ 250µA 54 nC @ 10 V ±30V 2205 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMTS0D4N04CTXG

NTMTS0D4N04CTXG

MOSFET N-CH 40V 79.8A/558A 8DFNW

onsemi

2330 6.43
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NTMTS0D4N04CTXG

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 79.8A (Ta), 558A (Tc) 10V 0.45mOhm @ 50A, 10V 4V @ 250µA 251 nC @ 10 V ±20V 16500 pF @ 20 V - 5W (Ta), 244W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STWA67N60M6

STWA67N60M6

MOSFET N-CH 600V 52A TO247

STMicroelectronics

3515 6.44
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Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 52A (Tc) 10V 49mOhm @ 26A, 10V 4.75V @ 250µA 72.5 nC @ 10 V ±25V 3400 pF @ 100 V - 330W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH24N60X

IXFH24N60X

MOSFET N-CH 600V 24A TO247-3

IXYS

2583 6.46
- +

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IXFH24N60X

Datenblatt

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 175mOhm @ 12A, 10V 4.5V @ 2.5mA 47 nC @ 10 V ±30V 1910 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPW24N60CFDFKSA1

SPW24N60CFDFKSA1

MOSFET N-CH 650V 21.7A TO247-3

Infineon Technologies

2371 6.48
- +

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Немедленный

SPW24N60CFDFKSA1

Datenblatt

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 21.7A (Tc) 10V 185mOhm @ 15.4A, 10V 5V @ 1.2mA 143 nC @ 10 V ±20V 3160 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH26N60P

IXTH26N60P

MOSFET N-CH 600V 26A TO247

IXYS

2105 6.51
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IXTH26N60P

Datenblatt

Tube Polar Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 270mOhm @ 500mA, 10V 5V @ 250µA 72 nC @ 10 V ±30V 4150 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
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