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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFP18N60X

IXFP18N60X

MOSFET N-CH 600V 18A TO220AB

IXYS

3410 6.51
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IXFP18N60X

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Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 230mOhm @ 9A, 10V 4.5V @ 1.5mA 35 nC @ 10 V ±30V 1440 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOK53S60

AOK53S60

MOSFET N-CH 600V 53A TO247

Alpha & Omega Semiconductor Inc.

2739 6.51
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AOK53S60

Datenblatt

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 53A (Tc) 10V 70mOhm @ 26.5A, 10V 3.8V @ 250µA 59 nC @ 10 V ±30V 3034 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH102N15T

IXFH102N15T

MOSFET N-CH 150V 102A TO247AD

IXYS

3462 6.51
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IXFH102N15T

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Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 150 V 102A (Tc) 10V 18mOhm @ 500mA, 10V 5V @ 1mA 87 nC @ 10 V ±20V 5220 pF @ 25 V - 455W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPZ65R095C7XKSA1

IPZ65R095C7XKSA1

MOSFET N-CH 650V 24A TO247-4

Infineon Technologies

14683 4.25
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IPZ65R095C7XKSA1

Datenblatt

Bulk,Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 95mOhm @ 11.8A, 10V 4V @ 590µA 45 nC @ 10 V ±20V 2140 pF @ 400 V - 128W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA90N20X3-TRL

IXFA90N20X3-TRL

MOSFET N-CH 200V 90A TO263

IXYS

3094 6.52
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Tape & Reel (TR) HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 10V 12.8mOhm @ 45A, 10V 4.5V @ 1.5mA 78 nC @ 10 V ±20V 5420 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA72N30X3-TRL

IXFA72N30X3-TRL

MOSFET N-CH 300V 72A TO263

IXYS

3084 6.52
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Tape & Reel (TR) HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 72A (Tc) 10V 19mOhm @ 36A, 10V 4.5V @ 1.5mA 82 nC @ 10 V ±20V 5400 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFH96N15P

IXFH96N15P

MOSFET N-CH 150V 96A TO247AD

IXYS

2136 6.59
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IXFH96N15P

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Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 150 V 96A (Tc) 10V 24mOhm @ 500mA, 10V 5V @ 4mA 110 nC @ 10 V ±20V 3500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK065Z65Z,S1F

TK065Z65Z,S1F

POWER MOSFET TRANSISTOR TO-247-4

Toshiba Semiconductor and Storage

3429 6.47
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TK065Z65Z,S1F

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Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 38A (Ta) 10V 65mOhm @ 19A, 10V 4V @ 1.69mA 62 nC @ 10 V ±30V 3650 pF @ 300 V - 270W (Tc) 150°C Through Hole
IXFA18N60X

IXFA18N60X

MOSFET N-CH 600V 18A TO263AA

IXYS

2737 6.61
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IXFA18N60X

Datenblatt

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 230mOhm @ 9A, 10V 4.5V @ 1.5mA 35 nC @ 10 V ±30V 1440 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTH22N50P

IXTH22N50P

MOSFET N-CH 500V 22A TO247

IXYS

3397 6.61
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IXTH22N50P

Datenblatt

Tube Polar Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 270mOhm @ 11A, 10V 5.5V @ 250µA 50 nC @ 10 V ±30V 2630 pF @ 25 V - 350W (Tc) -55°C ~ 150°C (TJ) Through Hole
STWA50N65DM2AG

STWA50N65DM2AG

MOSFET N-CH 650V 38A TO247

STMicroelectronics

2777 6.64
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Tube Automotive, AEC-Q101, MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 650 V 38A (Tc) 10V 87mOhm @ 19A, 10V 5V @ 250µA 69 nC @ 10 V ±25V 3200 pF @ 100 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
STWA48N60M6

STWA48N60M6

MOSFET N-CH 600V 39A TO247

STMicroelectronics

3692 6.64
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STWA48N60M6

Datenblatt

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 39A (Tc) 10V 69mOhm @ 19.5A, 10V 4.75V @ 250µA 57 nC @ 10 V ±25V 2578 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRF7799L2TR

AUIRF7799L2TR

MOSFET N-CH 250V 375A DIRECTFET

Infineon Technologies

2128 6.65
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AUIRF7799L2TR

Datenblatt

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 250 V 375A (Tc) 10V 38mOhm @ 21A, 10V 5V @ 250µA 165 nC @ 10 V ±30V 6714 pF @ 25 V - 4.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
APT30F50S

APT30F50S

MOSFET N-CH 500V 30A D3PAK

Microchip Technology

3564 6.67
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APT30F50S

Datenblatt

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 190mOhm @ 14A, 10V 5V @ 1mA 115 nC @ 10 V ±30V 4525 pF @ 25 V - 415W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTH300N04T2

IXTH300N04T2

MOSFET N-CH 40V 300A TO247

IXYS

3438 6.68
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IXTH300N04T2

Datenblatt

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 300A (Tc) 10V 2.5mOhm @ 50A, 10V 4V @ 250µA 145 nC @ 10 V ±20V 10700 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFP30N25X3M

IXFP30N25X3M

MOSFET N-CH 250V 30A TO220

IXYS

2496 6.70
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IXFP30N25X3M

Datenblatt

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 30A (Tc) 10V 60mOhm @ 15A, 10V 4.5V @ 500µA 21 nC @ 10 V ±20V 1450 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA6N120P-TRL

IXFA6N120P-TRL

MOSFET N-CH 1200V 6A TO263

IXYS

2166 6.71
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IXFA6N120P-TRL

Datenblatt

Tape & Reel (TR) HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 6A (Tc) 10V 2.4Ohm @ 500mA, 10V 5V @ 1mA 92 nC @ 10 V ±30V 2830 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPDQ60R075CFD7XTMA1

IPDQ60R075CFD7XTMA1

HIGH POWER_NEW PG-HDSOP-22

Infineon Technologies

3344 6.60
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Tape & Reel (TR) CoolMOS™ Active - MOSFET (Metal Oxide) 600 V - - - - - - - - - - Surface Mount
TK31E60W,S1VX

TK31E60W,S1VX

MOSFET N-CH 600V 30.8A TO220

Toshiba Semiconductor and Storage

2221 6.74
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TK31E60W,S1VX

Datenblatt

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V Super Junction 230W (Tc) 150°C (TJ) Through Hole
TK31A60W,S4VX

TK31A60W,S4VX

MOSFET N-CH 600V 30.8A TO220SIS

Toshiba Semiconductor and Storage

3074 6.74
- +

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TK31A60W,S4VX

Datenblatt

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V Super Junction 45W (Tc) 150°C (TJ) Through Hole
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