Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
NTMYS4D5N04CTWGMOSFET N-CH 40V 20A/80A 4LFPAK |
3803 | 1.64 |
ДобавитьНемедленный |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 20A (Ta), 80A (Tc) | 10V | 4.5mOhm @ 35A, 10V | 3.5V @ 50µA | 18 nC @ 10 V | 20V | 1150 pF @ 25 V | - | 3.6W (Ta), 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
![]() |
IAUC100N10S5L040ATMA1MOSFET N-CH 100V 100A 8TDSON-34 |
2761 | 1.65 |
ДобавитьНемедленный |
Tape & Reel (TR) | OptiMOS™-5 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 4.5V, 10V | 4mOhm @ 50A, 10V | 2V @ 90µA | 78 nC @ 10 V | ±20V | 5200 pF @ 50 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
![]() |
TK11A45D(STA4,Q,M)MOSFET N-CH 450V 11A TO220SIS |
2396 | 1.65 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | π-MOSVII | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 11A (Ta) | 10V | 620mOhm @ 5.5A, 10V | 4V @ 1mA | 20 nC @ 10 V | ±30V | 1050 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | Through Hole |
![]() |
IRFIBF20GPBFMOSFET N-CH 900V 1.2A TO220-3 |
3697 | 1.65 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 1.2A (Tc) | 10V | 8Ohm @ 720mA, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 490 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
TK12Q60W,S1VQMOSFET N CH 600V 11.5A IPAK |
3297 | 1.65 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11.5A (Ta) | 10V | 340mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | Super Junction | 100W (Tc) | 150°C (TJ) | Through Hole |
![]() |
TK10V60W,LVQMOSFET N-CH 600V 9.7A 4DFN |
3395 | 1.65 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.7A (Ta) | 10V | 380mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | Super Junction | 88.3W (Tc) | 150°C (TJ) | Surface Mount |
![]() |
AOB11S65LMOSFET N-CH 650V 11A TO263 |
3084 | 1.65 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | aMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 399mOhm @ 5.5A, 10V | 4V @ 250µA | 13.2 nC @ 10 V | ±30V | 646 pF @ 100 V | - | 198W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
NTMYS3D8N04CLTWGMOSFET N-CH 40V 22A/87A 4LFPAK |
3233 | 1.65 |
ДобавитьНемедленный |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 22A (Ta), 87A (Tc) | 4.5V, 10V | 3.7mOhm @ 20A, 10V | 2V @ 50µA | 18 nC @ 10 V | 20V | 1600 pF @ 25 V | - | 3.6W (Ta), 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
|
STP5N60M2MOSFET N-CH 600V 3.7A TO220 |
3712 | 1.66 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | MDmesh™ II Plus | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.7A (Tc) | 10V | 1.4Ohm @ 1.85A, 10V | 4V @ 250µA | 4.5 nC @ 10 V | ±25V | 165 pF @ 100 V | - | 45W (Tc) | 150°C (TJ) | Through Hole |
![]() |
NP36P06SLG-E1-AYMOSFET P-CH 60V 36A TO252 |
2913 | 1.66 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 36A (Tc) | 4.5V, 10V | 30mOhm @ 18A, 10V | - | 52 nC @ 10 V | ±20V | 3200 pF @ 10 V | - | 1.2W (Ta), 56W (Tc) | 175°C (TJ) | Surface Mount |
![]() |
TK16G60W5,RVQPB-F POWER MOSFET TRANSISTOR DPA |
2867 | 1.62 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 230mOhm @ 7.9A, 10V | 4.5V @ 790µA | 43 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 130W (Tc) | 150°C | Surface Mount |
![]() |
NVMFS5C426NWFET1GT6-40V N 1.3 MOHMS SL |
3596 | 1.66 |
ДобавитьНемедленный |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
IPI47N10S33AKSA1MOSFET N-CH 100V 47A TO262-3 |
3379 | 1.67 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | SIPMOS® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 47A (Tc) | 10V | 33mOhm @ 33A, 10V | 4V @ 2mA | 105 nC @ 10 V | ±20V | 2500 pF @ 25 V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IPI47N10SL26AKSA1MOSFET N-CH 100V 47A TO262-3 |
2107 | 1.67 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | SIPMOS® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 47A (Tc) | 4.5V, 10V | 26mOhm @ 33A, 10V | 2V @ 2mA | 135 nC @ 10 V | ±20V | 2500 pF @ 25 V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
PSMN030-150P,127MOSFET N-CH 150V 55.5A TO220AB |
2399 | 1.67 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 55.5A (Tc) | 10V | 30mOhm @ 25A, 10V | 4V @ 1mA | 98 nC @ 10 V | ±20V | 3680 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
PSMN057-200P,127MOSFET N-CH 200V 39A TO220AB |
4795 | 1.26 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk,Tube | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 39A (Tc) | 10V | 57mOhm @ 17A, 10V | 4V @ 1mA | 96 nC @ 10 V | ±20V | 3750 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IPA65R420CFDXKSA1MOSFET N-CH 650V 8.7A TO220 |
3675 | 1.67 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 340µA | 32 nC @ 10 V | ±20V | 870 pF @ 100 V | - | 31.2W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IPP65R420CFDXKSA1MOSFET N-CH 650V 8.7A TO220-3 |
333 | 1.06 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 340µA | 32 nC @ 10 V | ±20V | 870 pF @ 100 V | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IPA65R420CFDXKSA2MOSFET N-CH 650V 8.7A TO220 |
3179 | 1.67 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | CoolMOS™ CFD2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 300µA | 31.5 nC @ 10 V | ±20V | 870 pF @ 100 V | - | 31.2W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IPP65R420CFDXKSA2MOSFET N-CH 650V 8.7A TO220-3 |
2867 | 1.67 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | CoolMOS™ CFD2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 300µA | 31.5 nC @ 10 V | ±20V | 870 pF @ 100 V | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |