Добро пожаловать Element Technology Co., Ltd.!

+86 15361839241 +86 0755-23603516
Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHA20N50E-E3

SIHA20N50E-E3

MOSFET N-CH 500V 19A TO220

Vishay Siliconix

3930 1.57
- +

Добавить

Немедленный

SIHA20N50E-E3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 19A (Tc) 10V 184mOhm @ 10A, 10V 4V @ 250µA 92 nC @ 10 V ±30V 1640 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI7846DP-T1-GE3

SI7846DP-T1-GE3

MOSFET N-CH 150V 4A PPAK SO-8

Vishay Siliconix

3468 3.08
- +

Добавить

Немедленный

SI7846DP-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 4A (Ta) 10V 50mOhm @ 5A, 10V 4.5V @ 250µA 36 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AOT66616L

AOT66616L

MOSFET N-CH 60V 38.5A/140A TO220

Alpha & Omega Semiconductor Inc.

3549 1.57
- +

Добавить

Немедленный

AOT66616L

Datenblatt

Tube AlphaSGT™ Active N-Channel MOSFET (Metal Oxide) 60 V 38.5A (Ta), 140A (Tc) 6V, 10V 3.2mOhm @ 20A, 10V 3.4V @ 250µA 60 nC @ 10 V ±20V 2870 pF @ 30 V - 8.3W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
STU13NM60N

STU13NM60N

MOSFET N-CH 600V 11A IPAK

STMicroelectronics

3342 1.57
- +

Добавить

Немедленный

STU13NM60N

Datenblatt

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 27 nC @ 10 V ±25V 790 pF @ 50 V - 90W (Tc) 150°C (TJ) Through Hole
AOT262L

AOT262L

MOSFET N-CH 60V 20A/140A TO220

Alpha & Omega Semiconductor Inc.

2062 1.57
- +

Добавить

Немедленный

AOT262L

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta), 140A (Tc) 6V, 10V 3mOhm @ 20A, 10V 3.2V @ 250µA 115 nC @ 10 V ±20V 9800 pF @ 30 V - 2.1W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7606-55B,118

BUK7606-55B,118

MOSFET N-CH 55V 75A D2PAK

Nexperia USA Inc.

2527 1.57
- +

Добавить

Немедленный

BUK7606-55B,118

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6mOhm @ 25A, 10V 4V @ 1mA 64 nC @ 10 V ±20V 5100 pF @ 25 V - 254W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL40S212ARMA1

IRL40S212ARMA1

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies

2286 1.57
- +

Добавить

Немедленный

IRL40S212ARMA1

Datenblatt

Tape & Reel (TR) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 4.5V, 10V 1.9mOhm @ 100A, 10V 2.4V @ 150µA 137 nC @ 4.5 V ±20V 8320 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7540TRLPBF

IRFS7540TRLPBF

MOSFET N-CH 60V 110A D2PAK

Infineon Technologies

3243 1.57
- +

Добавить

Немедленный

IRFS7540TRLPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 6V, 10V 5.1mOhm @ 65A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4555 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN2R2-40BS,118

PSMN2R2-40BS,118

MOSFET N-CH 40V 100A D2PAK

Nexperia USA Inc.

3356 1.57
- +

Добавить

Немедленный

PSMN2R2-40BS,118

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.2mOhm @ 25A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 8423 pF @ 20 V - 306W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK8A55DA(STA4,Q,M)

TK8A55DA(STA4,Q,M)

MOSFET N-CH 550V 7.5A TO220SIS

Toshiba Semiconductor and Storage

3052 1.57
- +

Добавить

Немедленный

TK8A55DA(STA4,Q,M)

Datenblatt

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 7.5A (Ta) 10V 1.07Ohm @ 3.8A, 10V 4V @ 1mA 16 nC @ 10 V ±30V 800 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
NTMYS3D5N04CTWG

NTMYS3D5N04CTWG

MOSFET N-CH 40V 24A/102A LFPAK4

onsemi

3193 1.57
- +

Добавить

Немедленный

NTMYS3D5N04CTWG

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 24A (Ta), 102A (Tc) 10V 3.3mOhm @ 50A, 10V 3.5V @ 60µA 23 nC @ 10 V ±20V 1600 pF @ 25 V - 3.6W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3803STRRPBF

IRL3803STRRPBF

MOSFET N-CH 30V 140A D2PAK

Infineon Technologies

298 1.00
- +

Добавить

Немедленный

IRL3803STRRPBF

Datenblatt

Tape & Reel (TR),Bulk HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 6mOhm @ 71A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 5000 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK3199

2SK3199

MOSFET N-CH 500V 5A TO220F

Sanken

2809 1.58
- +

Добавить

Немедленный

2SK3199

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Ta) 10V 1.5Ohm @ 2.5A, 10V 4V @ 1mA - ±30V 650 pF @ 10 V - 30W (Tc) 150°C (TJ) Through Hole
TSM033NB04LCR RLG

TSM033NB04LCR RLG

MOSFET N-CH 40V 21A/121A 8PDFN

Taiwan Semiconductor Corporation

2465 1.58
- +

Добавить

Немедленный

TSM033NB04LCR RLG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 21A (Ta), 121A (Tc) 4.5V, 10V 3.3mOhm @ 21A, 10V 2.5V @ 250µA 79 nC @ 10 V ±20V 4456 pF @ 20 V - 3.1W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF5210LPBF

IRF5210LPBF

MOSFET P-CH 100V 38A TO262

Infineon Technologies

3897 1.58
- +

Добавить

Немедленный

IRF5210LPBF

Datenblatt

Tube HEXFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 100 V 38A (Tc) 10V 60mOhm @ 38A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 2780 pF @ 25 V - 3.1W (Ta), 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK753R1-40E,127

BUK753R1-40E,127

MOSFET N-CH 40V 100A TO220AB

Nexperia USA Inc.

2090 1.00
- +

Добавить

Немедленный

BUK753R1-40E,127

Datenblatt

Bulk,Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.1mOhm @ 25A, 10V 4V @ 1mA 79 nC @ 10 V ±20V 6200 pF @ 25 V - 234W (Tc) -55°C ~ 175°C (TJ) Through Hole
R5007ANJTL

R5007ANJTL

MOSFET N-CH 500V 7A LPTS

Rohm Semiconductor

2759 1.58
- +

Добавить

Немедленный

R5007ANJTL

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 7A (Ta) 10V 1.05Ohm @ 3.5A, 10V 4.5V @ 1mA 13 nC @ 10 V ±30V 500 pF @ 25 V - 40W (Tc) 150°C (TJ) Surface Mount
FDPF035N06B-F154

FDPF035N06B-F154

MOSFET N-CH 60V 88A TO220F

onsemi

3528 1.58
- +

Добавить

Немедленный

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 88A (Tc) - 3.5mOhm @ 88A, 10V 4V @ 250µA 99 nC @ 10 V ±20V 8030 pF @ 30 V - 46.3W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S405AKSA2

IPI80N06S405AKSA2

MOSFET N-CHANNEL_55/60V

Infineon Technologies

3000 1.00
- +

Добавить

Немедленный

IPI80N06S405AKSA2

Datenblatt

Tube,Tube * Active - - - - - - - - - - - - - -
FCPF400N80ZL1-F154

FCPF400N80ZL1-F154

MOSFET N-CH 800V 11A TO220F-3

onsemi

3359 1.58
- +

Добавить

Немедленный

Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tj) - 400mOhm @ 5.5A, 10V 4.5V @ 1.1mA 56 nC @ 10 V ±20V 2350 pF @ 100 V - 35.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 42446 Records«Prev1... 11241125112611271128112911301131...2123Next»
Запрос котировок
Номер запчасти
А
Связь
Электронная почта
Замечания
  • Домой

    Домой

    Продукты

    Продукты

    Телефон

    Телефон

    Пользователи

    Пользователи