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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFZ24STRRPBF

IRFZ24STRRPBF

MOSFET N-CH 60V 17A TO263

Vishay Siliconix

3645 1.54
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IRFZ24STRRPBF

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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STU9N60M2

STU9N60M2

MOSFET N-CH 600V 5.5A IPAK

STMicroelectronics

3225 1.54
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STU9N60M2

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Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 5.5A (Tc) 10V 780mOhm @ 3A, 10V 4V @ 250µA 10 nC @ 10 V ±25V 320 pF @ 100 V - 60W (Tc) 150°C (TJ) Through Hole
IRFZ24STRLPBF

IRFZ24STRLPBF

MOSFET N-CH 60V 17A D2PAK

Vishay Siliconix

3191 1.54
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IRFZ24STRLPBF

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMFD4952NFT1G

NTMFD4952NFT1G

MOSFET N-CH 30V 10.8A 8DFN DL

onsemi

2281 1.54
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Tape & Reel (TR) - Last Time Buy - - - - - - - - - - - - - Surface Mount
IXTY1R6N100D2-TRL

IXTY1R6N100D2-TRL

MOSFET N-CH 1000V 1.6A TO252

IXYS

3829 1.54
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Tape & Reel (TR) Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 1.6A (Tj) 0V 10Ohm @ 800mA, 0V 4.5V @ 100µA 27 nC @ 5 V ±20V 645 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK16V60W,LVQ

TK16V60W,LVQ

MOSFET N-CH 600V 15.8A 4DFN

Toshiba Semiconductor and Storage

2303 1.55
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TK16V60W,LVQ

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Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V Super Junction 139W (Tc) 150°C (TJ) Surface Mount
AOTF20N40L

AOTF20N40L

MOSFET N-CH 400V 20A TO220-3F

Alpha & Omega Semiconductor Inc.

2027 1.55
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AOTF20N40L

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 20A (Tc) 10V 250mOhm @ 10A, 10V 4.3V @ 250µA 45 nC @ 10 V ±30V 2290 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMFS5C442NT3G

NTMFS5C442NT3G

MOSFET N-CH 40V 29A/140A 5DFN

onsemi

3228 1.55
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NTMFS5C442NT3G

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 29A (Ta), 140A (Tc) 10V 2.3mOhm @ 50A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 2100 pF @ 25 V - 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFIZ44GPBF

IRFIZ44GPBF

MOSFET N-CH 60V 30A TO220-3

Vishay Siliconix

2057 1.55
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IRFIZ44GPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 28mOhm @ 18A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2500 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHF18N50D-E3

SIHF18N50D-E3

MOSFET N-CH 500V 18A TO220

Vishay Siliconix

2602 1.55
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SIHF18N50D-E3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 18A (Tc) 10V 280mOhm @ 9A, 10V 5V @ 250µA 76 nC @ 10 V ±30V 1500 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOTF20N60

AOTF20N60

MOSFET N-CH 600V 20A TO220-3F

Alpha & Omega Semiconductor Inc.

2840 1.55
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AOTF20N60

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 370mOhm @ 10A, 10V 4.5V @ 250µA 74 nC @ 10 V ±30V 3680 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOTF22N50

AOTF22N50

MOSFET N-CH 500V 22A TO220-3F

Alpha & Omega Semiconductor Inc.

2395 1.55
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AOTF22N50

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Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 260mOhm @ 11A, 10V 4.5V @ 250µA 83 nC @ 10 V ±30V 3710 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSC016N04LSGATMA1

BSC016N04LSGATMA1

MOSFET N-CH 40V 31A/100A TDSON

Infineon Technologies

3453 3.14
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BSC016N04LSGATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 31A (Ta), 100A (Tc) 4.5V, 10V 1.6mOhm @ 50A, 10V 2V @ 85µA 150 nC @ 10 V ±20V 12000 pF @ 20 V - 2.5W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB90N04S402ATMA1

IPB90N04S402ATMA1

MOSFET N-CH 40V 90A D2PAK

Infineon Technologies

2079 1.00
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IPB90N04S402ATMA1

Datenblatt

Tape & Reel (TR),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 2.1mOhm @ 90A, 10V 4V @ 95µA 118 nC @ 10 V ±20V 9430 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPF041N10NF2SATMA1

IPF041N10NF2SATMA1

TRENCH >=100V

Infineon Technologies

2036 1.56
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Tape & Reel (TR) * Active - - - - - - - - - - - - - -
AOWF15S65

AOWF15S65

MOSFET N-CH 650V 15A TO262F

Alpha & Omega Semiconductor Inc.

3942 1.56
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AOWF15S65

Datenblatt

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 290mOhm @ 7.5A, 10V 4V @ 250µA 17.2 nC @ 10 V ±30V 841 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMFS4C302NWFT1G

NVMFS4C302NWFT1G

MOSFET N-CH 30V 43A/241A 5DFN

onsemi

3602 1.56
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NVMFS4C302NWFT1G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 30 V 43A (Ta), 241A (Tc) 4.5V, 10V 1.15mOhm @ 30A, 10V 2.2V @ 250µA 82 nC @ 10 V ±20V 5780 pF @ 15 V - 3.75W (Ta), 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOD380A60

AOD380A60

MOSFET N-CH 600V 11A TO252

Alpha & Omega Semiconductor Inc.

2186 1.57
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AOD380A60

Datenblatt

Tape & Reel (TR),Cut Tape (CT) aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 3.8V @ 250µA 20 nC @ 10 V ±20V 955 pF @ 100 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4890DY-T1-E3

SI4890DY-T1-E3

MOSFET N-CH 30V 11A 8-SOIC

Vishay Siliconix

2124 1.57
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SI4890DY-T1-E3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 12mOhm @ 11A, 10V 800mV @ 250µA (Min) 20 nC @ 5 V ±25V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHP14N50D-GE3

SIHP14N50D-GE3

MOSFET N-CH 500V 14A TO220AB

Vishay Siliconix

2060 1.57
- +

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SIHP14N50D-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 400mOhm @ 7A, 10V 5V @ 250µA 58 nC @ 10 V ±30V 1144 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
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