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| Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXH020F120MNF1PTGPIM F1 SIC FULL BRIDGE 1200V 20M |
2124 | 152.73 |
ДобавитьНемедленный |
Datenblatt |
Tray | - | Active | 4 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 51A (Tc) | 30mOhm @ 50A, 20V | 4.3V @ 20mA | 213.5nC @ 20V | 2420pF @ 800V | 119W (Tj) | -40°C ~ 175°C (TJ) | Chassis Mount |
|
|
MSCSM170AM45CT1AGPM-MOSFET-SIC-SBD-SP1F |
3289 | 155.95 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1700V (1.7kV) | 64A (Tc) | 45mOhm @ 30A, 20V | 3.2V @ 2.5mA | 178nC @ 20V | 3300pF @ 1000V | 319W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount |
|
|
MSCSM120AM31T1AGPM-MOSFET-SIC-SP1F |
2074 | 114.73 |
ДобавитьНемедленный |
Bulk | - | Active | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232nC @ 20V | 3020pF @ 1000V | 395W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | |
|
|
MSCSM120DUM31CTBL1NGPM-MOSFET-SIC-SBD-BL1 |
2505 | 175.84 |
ДобавитьНемедленный |
Bulk | - | Active | 2 N-Channel (Dual) Common Source | Silicon Carbide (SiC) | 1200V | 79A | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | Chassis Mount | |
|
|
MSCSM120AM31CTBL1NGPM-MOSFET-SIC-SBD-BL1 |
2302 | 175.84 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V | 79A | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | Chassis Mount |
|
|
MSCSM120TLM50C3AGPM-MOSFET-SIC-SBD-SP3F |
3995 | 180.18 |
ДобавитьНемедленный |
Bulk | - | Active | 4 N-Channel (Three Level Inverter) | Silicon Carbide (SiC) | 1200V (1.2kV) | 55A (Tc) | 50mOhm @ 40A, 20V | 2.7V @ 1mA | 137nC @ 20V | 1990pF @ 1000V | 245W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | |
|
|
MSCSM120DHM31CTBL2NGPM-MOSFET-SIC-SBD-BL2 |
3070 | 195.93 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | 2 N-Channel (Dual) Asymmetrical | Silicon Carbide (SiC) | 1200V | 79A | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | Chassis Mount |
|
|
MSCSM120DUM31TBL1NGPM-MOSFET-SIC-BL1 |
3365 | 148.56 |
ДобавитьНемедленный |
Bulk | - | Active | 2 N-Channel (Dual) Common Source | Silicon Carbide (SiC) | 1200V (1.2kV) | 79A | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | Chassis Mount | |
|
|
MSCSM120AM31TBL1NGPM-MOSFET-SIC-BL1 |
3613 | 148.56 |
ДобавитьНемедленный |
Bulk | - | Active | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 79A | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | Chassis Mount | |
|
|
FF11MR12W1M1B70BPSA1LOW POWER EASY AG-EASY1B-2 |
3971 | 228.10 |
ДобавитьНемедленный |
Datenblatt |
Tray | CoolSiC™+ | Obsolete | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 100A (Tj) | 11.3mOhm @ 100A, 15V | 5.55V @ 40mA | 248nC @ 15V | 7360pF @ 800V | 20mW (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
MSCSM120DUM16T3AGPM-MOSFET-SIC-SP3F |
3016 | 237.47 |
ДобавитьНемедленный |
Bulk | - | Active | 2 N-Channel (Dual) Common Source | Silicon Carbide (SiC) | 1200V (1.2kV) | 173A (Tc) | 16mOhm @ 80A, 20V | 2.8V @ 2mA | 464nC @ 20V | 6040pF @ 1000V | 745W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | |
|
|
MSCSM120HM50T3AGPM-MOSFET-SIC-SP3F |
3169 | 154.95 |
ДобавитьНемедленный |
Bulk | - | Active | 4 N-Channel (Full Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 55A (Tc) | 50mOhm @ 40A, 20V | 2.7V @ 2mA | 137nC @ 20V | 1990pF @ 1000V | 245W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | |
|
|
MSCSM70TLM19C3AGPM-MOSFET-SIC-SBD-SP3F |
2794 | 241.80 |
ДобавитьНемедленный |
Bulk | - | Active | 4 N-Channel (Three Level Inverter) | Silicon Carbide (SiC) | 700V | 124A (Tc) | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215nC @ 20V | 4500pF @ 700V | 365W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | |
|
|
MSCSM170TLM45C3AGPM-MOSFET-SIC-SBD-SP3F |
2463 | 244.78 |
ДобавитьНемедленный |
Bulk | - | Active | 4 N-Channel (Three Level Inverter) | Silicon Carbide (SiC) | 1700V (1.7kV) | 64A (Tc) | 45mOhm @ 30A, 20V | 3.2V @ 2.5mA | 178nC @ 20V | 3300pF @ 1000V | 319W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | |
|
|
MSCSM120TLM31C3AGPM-MOSFET-SIC-SBD-SP3F |
3935 | 273.83 |
ДобавитьНемедленный |
Bulk | - | Active | 4 N-Channel (Three Level Inverter) | Silicon Carbide (SiC) | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 395W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | |
|
|
MSCSM70DUM07T3AGPM-MOSFET-SIC-SP3F |
2287 | 299.73 |
ДобавитьНемедленный |
Bulk | - | Active | 2 N-Channel (Dual) Common Source | Silicon Carbide (SiC) | 700V | 353A (Tc) | 6.4mOhm @ 120A, 20V | 2.4V @ 12mA | 645nC @ 20V | 13500pF @ 700V | 988W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | |
|
|
MSCSM120HM31CTBL2NGPM-MOSFET-SIC-SBD-BL2 |
3628 | 313.41 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | 4 N-Channel (Full Bridge) | Silicon Carbide (SiC) | 1200V | 79A | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | Chassis Mount |
|
|
MSCSM120DDUM31CTBL2NGPM-MOSFET-SIC-SBD-BL2 |
3278 | 313.41 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | 4 N-Channel, Common Source | Silicon Carbide (SiC) | 1200V | 79A | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | Chassis Mount |
|
|
MSCSM170HM45CT3AGPM-MOSFET-SIC-SBD-SP3F |
3506 | 339.09 |
ДобавитьНемедленный |
Bulk | - | Active | 4 N-Channel (Full Bridge) | Silicon Carbide (SiC) | 1700V (1.7kV) | 64A (Tc) | 45mOhm @ 30A, 20V | 3.2V @ 2.5mA | 178nC @ 20V | 3300pF @ 1000V | 319W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | |
|
|
MSCSM70TLM10C3AGPM-MOSFET-SIC-SBD-SP3F |
3695 | 406.45 |
ДобавитьНемедленный |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 4 N-Channel | Silicon Carbide (SiC) | 700V | 241A (Tc) | 9.5mOhm @ 80A, 20V | 2.4V @ 8mA (Typ) | 430nC @ 20V | 9000pF @ 700V | 690W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
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