Transistors - FETs, MOSFETs - Arrays - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	ProductStatus	FETType	FETFeature	DraintoSourceVoltage(Vdss)	Current-ContinuousDrain(Id)@25°C	RdsOn(Max)@IdVgs	Vgs(th)(Max)@Id	GateCharge(Qg)(Max)@Vgs	InputCapacitance(Ciss)(Max)@Vds	Power-Max	OperatingTemperature	MountingType
NVMFD024N06CT1G MOSFET N-CH 60V 8DFN 5X6 onsemi	3747	2.12	- + Добавить Немедленный		Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	Active	2 N-Channel (Dual)	Standard	60V	8A (Ta), 24A (Tc)	22.6mOhm @ 3A, 10V	4V @ 20µA	5.7nC @ 10V	333pF @ 30V	3.1W (Ta), 28W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
NVMFD5C466NWFT1G 40V 8.1 MOHM T8 S08FL DUA onsemi	3139	2.16	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	Active	2 N-Channel (Dual)	Standard	40V	14A (Ta), 49A (Tc)	8.1mOhm @ 15A, 10V	3.5V @ 250µA	11nC @ 10V	650pF @ 25V	3W (Ta), 38W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
NTTFD2D8N03P1E MOSFET N-CH 30V 12WQFN onsemi	2453	2.36	- + Добавить Немедленный		Tape & Reel (TR),Cut Tape (CT)	PowerTrench®	Active	2 N-Channel (Dual)	Standard	30V	16.1A (Ta), 80A (Tc)	2.5mOhm @ 18A, 10V	3V @ 400µA	20.8nC @ 10V, 20.5nC @ 10V	1500pF @ 15V, 1521pF @ 15V	1.04W (Ta), 26W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount
TSM300NB06LDCR RLG 60V, 24A, DUAL N-CHANNEL POWER M Taiwan Semiconductor Corporation	2851	2.34	- + Добавить Немедленный		Tape & Reel (TR),Cut Tape (CT)	-	Active	2 N-Channel (Dual)	Logic Level Gate	60V	5A (Ta), 24A (Tc)	30mOhm @ 5A, 10V	2.5V @ 250µA	17nC @ 10V	966pF @ 30V	2W (Ta), 40W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
SIZF640DT-T1-GE3 DUAL N-CHANNEL 40 V (D-S) MOSFET Vishay Siliconix	2896	2.94	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	TrenchFET® Gen IV	Active	2 N-Channel (Dual) Common Source	Standard	40V	41A (Ta), 159A (Tc)	1.37mOhm @ 15A, 10V	2.4V @ 250µA	106nC @ 10V	5750pF @ 20V	4.2W (Ta), 62.5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
EFC4C012NLTDG NCH 30V 30A WLCSP6 DUAL onsemi	3925	2.59	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	-	Active	2 N-Channel (Dual) Common Drain	Standard	-	-	-	2.2V @ 1mA	18nC @ 4.5V	-	2.5W (Ta)	150°C (TJ)	Surface Mount
NTMFD020N06CT1G MOSFET N-CH 60V T6 8DFN onsemi	2940	2.41	- + Добавить Немедленный		Tape & Reel (TR),Cut Tape (CT)	-	Active	2 N-Channel (Dual)	Standard	60V	8A (Ta), 27A (Tc)	20.3mOhm @ 4A, 10V	4V @ 20µA	5.8nC @ 10V	355pF @ 30V	3.1W (Ta), 31W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
NTMFD5C674NLT1G T6 60V LL S08FL DS onsemi	2923	1.75	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	-	Active	2 N-Channel (Dual)	Standard	60V	11A (Ta), 42A (Tc)	14.4mOhm @ 10A, 10V	2.2V @ 25µA	10nC @ 10V	640pF @ 25V	3W (Ta), 37W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
NVMFD5485NLT1G MOSFET 2N-CH 60V 5.3A DFN8 onsemi	3798	1.00	- + Добавить Немедленный	Datenblatt	Bulk	Automotive, AEC-Q101	Not For New Designs	2 N-Channel (Dual)	Logic Level Gate	60V	5.3A	44mOhm @ 15A, 10V	2.5V @ 250µA	20nC @ 10V	560pF @ 25V	2.9W	-55°C ~ 175°C (TJ)	Surface Mount
2SK4085LS-CBC11 N-CHANNEL MOSFET onsemi	2217	1.19	- + Добавить Немедленный	Datenblatt	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-
TQM250NB06DCR RLG 60V, 30A, DUAL N-CHANNEL POWER M Taiwan Semiconductor Corporation	3693	3.75	- + Добавить Немедленный		Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	Active	2 N-Channel (Dual)	Standard	60V	6A (Ta), 30A (Tc)	25mOhm @ 6A, 10V	3.8V @ 250µA	24nC @ 10V	1398pF @ 30V	2.5W (Ta), 58W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank
NP29N06QDK-E1-AY ABU / MOSFET Renesas Electronics America Inc	2402	1.95	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	Active	2 N-Channel (Dual)	Standard	60V	30A (Ta)	20mOhm @ 15A, 10V	2.5V @ 250µA	24nC @ 10V	1500pF @ 25V	1W (Ta), 44W (Tc)	175°C	Surface Mount
IPL60R385CP COOLMOS N-CHANNEL POWER MOSFET Infineon Technologies	3812	0.00	- + Добавить Немедленный	Datenblatt	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-
NVMFD6H840NLWFT1G T8 80V LL SO8FL DS onsemi	3983	2.88	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	Active	2 N-Channel (Dual)	Standard	80V	14A (Ta), 74A (Tc)	6.9mOhm @ 20A, 10V	2V @ 96µA	32nC @ 10V	2002pF @ 40V	-	-55°C ~ 175°C (TJ)	Surface Mount
NTMFD5C680NLT1G T6 60V LL SO8FL DUAL onsemi	2478	1.50	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	-	Active	2 N-Channel (Dual)	Standard	60V	7.5A (Ta), 26A (Tc)	28mOhm @ 5A, 10V	2.2V @ 13µA	5nC @ 10V	350pF @ 25V	3W (Ta), 19W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
EFC4C002NLTDG MOSFET 2N-CH 8WLCSP onsemi	2443	4.92	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	-	Active	2 N-Channel (Dual) Common Drain	Logic Level Gate	-	-	-	2.2V @ 1mA	45nC @ 4.5V	6200pF @ 15V	2.6W	150°C (TJ)	Surface Mount
FDMD86100 MOSFET 2N-CH 100V 10A 8POWER 5X6 onsemi	2778	4.74	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	PowerTrench®	Active	2 N-Channel (Dual) Common Source	Standard	100V	10A	10.5mOhm @ 10A, 10V	4V @ 250µA	30nC @ 10V	2060pF @ 50V	2.2W	-55°C ~ 150°C (TJ)	Surface Mount
NP30N06QDK-E1-AY POWER TR2 AUTOMOTIVE MOS DUAL N- Renesas Electronics America Inc	2564	2.40	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	Active	2 N-Channel (Dual)	Standard	60V	30A (Tc)	14mOhm @ 15A, 10V	2.5V @ 250µA	38nC @ 10V	2250pF @ 25V	1W (Ta), 59W (Tc)	175°C	Surface Mount
EPC2111 GAN TRANS ASYMMETRICAL HALF BRID EPC	2485	3.21	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	-	Active	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	30V	16A (Ta)	19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V	2.5V @ 5mA	2.2nC @ 5V, 5.7nC @ 5V	230pF @ 15V, 590pF @ 15V	-	-40°C ~ 150°C (TJ)	Surface Mount
IRFF311 TRANS MOSFET N-CH 350V 5.5A International Rectifier	2735	0.00	- + Добавить Немедленный	Datenblatt	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-